MS1079

MS1079 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 220 W GP = 13 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Value 110 55 4.0 12 320 +200 -65 to +150 Unit V V V A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.7 °C/W 053-7052 Rev - 10-2002 MS1079 STATIC STATIC ELECTRICAL ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVCBO BVCEO BVEBO ICEO ICES hFE IC = 200mA IC = 200mA IE = 20mA VCE = 30V VCE = 55V VCE = 6V Test Conditions Min. IE = 0mA IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A 110 55 4.0 ----15 Value Typ. ------------- Max. ------5 10 80 Unit V V V mA mA --- DYNAMIC DYNAMIC Symbol POUT Gp IMD ηC COB Conditions f =30 MHz f =30 MHz f =30 MHz f =30 MHz f = 1 MHz f1= 30.000 MHz Test Conditions Min. VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V f2 = 30.001 MHz ICQ=150mA ICQ=150mA ICQ=150mA ICQ=150mA 220 13 --40 --- Value Typ. ----------- Max. -----30 --390 Unit WPEP dB dBc % pF 053-7052 Rev - 10-2002 MS1079 TYPICAL TYPICAL PERFORMANCE 053-7052 Rev - 10-2002 MS1079 PACKAGE MECHANICAL DATA 053-7052 Rev - 10-2002