MS1226

MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION TIO DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base Voltage Co llector-emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature Paramete r 65 36 4.0 4.5 80 +200 -65 to +150 Value U V V V A W C C nit Ther Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 C/W 053-7055 Rev - 10-2002 MS1226 STATIC STATIC ELECTRICAL ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVcbo BVces BVceo BVebo Icbo HFE IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V Test Conditions Min. IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA 65 65 35 4.0 --10 Value Typ. ------------- Max. --------1.0 200 Unit V V V V mA --- DYNAMIC DYNAM DYNAMIC Symbol POUT GP IMD Cob Conditions f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz VCE = 28 V Test Conditions Min. PIN = 0.48W PIN = 0.48W PIN = 0.48W VCB = 30V ICQ = 25 mA VCE = 28V VCE = 28V VCE = 28V 30 18 ----- Value Typ. ---------- Max. -----28 65 Unit W dB dBC pf 053-7055 Rev - 10-2002 MS1226 PACK PACKAGE MECHANICAL DATA 053-7055 Rev - 10-2002