MS1227

MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: D ESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS A BSOLUTE Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 ° C/W MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1227 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVcbo Bvces Bvceo Bvebo Ices HFE IC = 50mA IC = 50mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V Test Conditions Min. IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 1A 36 36 18 4.0 --10 Value Typ. ------------- Max. --------5 200 Unit V V V V mA --- DYNAMIC Symbol POUT GP IMD Cob f = 30MHz f = 30MHz f = 30MHz f = 1 MHz Test Conditions Min. VCC = 12.5V VCC = 12.5V VCC = 12.5V VCB = 30V ICQ = 25mA ICQ = 25mA ICQ = 25mA 20 15 ----- Value Typ. --------- Max. -----30 135 Unit W dB dB pf MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1227 PACKAGE MECHANICAL DATA MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.