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MS1253

MS1253

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MS1253 - RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS - Advanced Power Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MS1253 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features F eatures • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : D ESCRIPTION The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) A BSOLUTE Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value 45 18 3.5 183 12.0 200 -65 to +150 Unit V V V W A °C °C Thermal Data Thermal RTH(J-C) Thermal Resistance Junction-case 1.05 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL Symbol BVcbo BVces BVebo BVceo Ices HFE IC = 50 mA IC = 100 mA IE = 10 mA IE = 50 mA VCE = 15 V VCE = 5 V STATIC S TATIC Test Conditions IE = 0 mA VBE = 0 V IE = 0 mA IB = 0 mA IE = 0 mA IC = 5 A Value Min. 45 40 3.5 18 --10 Typ. ------------- Max. --------10 200 Unit V V V V mA --- DYNAMIC DYNAMIC Symbol POUT GPE ηC COB f = 50 MHz f = 50 MHz f = 50 MHz f = 1 MHz Test Conditions PIN = 7W PIN = 7W PIN = 7W VCB = 12.5 V VCE = 12.5V VCE = 12.5V VCE = 12.5V Value Min. 70 10 45 --- Typ. --------- Max. ------300 Unit W dB % pf IMPENDANCE DATA IMPENDANCE FREQ 50 MHz POUT = 70W VCE = 12.5V ZIN(Ω) 0.8 + j0.9 ZCL(Ω) 1.2 + j0.6 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1253
物料型号: - 型号:MS1253

器件简介: - MS1253是一款12.5V的C类外延硅NPN晶体管,主要用于陆地移动发射机应用。该器件采用发射极球阻,非常稳定,能够在工作条件下承受高VSWR。

引脚分配: - 1. Collector(集电极) - 3. Base(基极) - 2. Emitter(发射极) - 4. Emitter(发射极)

参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):45V - VCEO(集电极-发射极电压):18V - VEBO(发射极-基极电压):3.5V - PDISS(功率耗散):183W - Ic(器件电流):12.0A - TJ(结温):200°C - TSTG(储存温度):-65至+150°C - 热阻(Junction-case):1.05°C/W

功能详解: - 静态电气规格(Tcase = 25°C): - BVcbo(集电极-基极电压):45V - BVces(集电极-发射极电压):40V - BVebo(发射极-基极电压):3.5V - BVceo(集电极-发射极电压):18V - Ices(集电极饱和电流):10mA - HFE(电流增益):10至200 - 动态规格: - POUT(输出功率):70W - GPE(功率增益):10dB - nc(相位噪声):45% - CoB(输出电容):300pf

应用信息: - MS1253主要设计用于陆地移动发射机应用。

封装信息: - 封装类型:.380 4LFL(M113)环氧树脂密封 - 机械尺寸数据以英寸和毫米为单位提供,具体数值请参考PDF文档中的PACKAGE MECHANICAL DATA部分。
MS1253 价格&库存

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