MS1329

MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. ABSOLUTE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Value 65.0 35.0 4.0 75.0 6.5 +200 -65 to +150 Unit V V V W A °C °C Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Collector current Junction Temperature Storage Temperature Thermal Thermal Data RTH(J-C) Thermal Resistance Junction-Case 2.3 °C/W 053-7067 Rev - 10-2002 MS1329 ELECTRICAL SPECIFICATIONS ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol BVces BVceo BVebo Icbo HFE IC = 200mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0V STATIC STATIC Test Conditions Min. VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA 65.0 35.0 4.0 --10 Value Typ. ----------- Max. ------2.0 150 Unit V V V mA --- DYNAMIC DYNAMIC Symbol POUT PG COB f = 150 MHz f = 150 MHz VCB = 28V Test Conditions Min. PIN = 12W PIN = 12W f = 1 MHz VCE = 28V VCE = 28V 60.0 7.0 --- Value Typ. ------- Max. ----80.0 Unit W dB pf IMPEDANCE IMPEDANCE DATA FREQ 150 MHz POUT = 60W VCE = 28V ZIN(Ω) 1.0 + j2.0 ZCL(Ω) 4.0 - j3.9 053-7067 Rev - 10-2002 MS1329 PACK PACKAGE MECHANICAL DATA 053-7067 Rev - 10-2002