MS1337
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Features Features
• • • • • 175 MHz 12.5 VOLTS POUT = 30W MINIMUM GP = 10 dB GAIN COMMON EMITTER CONFIGURATION
DESCRIPTION: DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
ABSOLUTE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TJ TSTG
Parameter
Value
36 18 36 4.0 8.0 70 +200 -65 to +150
Unit
V V V V A W °C °C
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Thermal Thermal Data
RTH(J-C) Junction-case Thermal Resistance 1.2 °C/W
053-7069 Rev - 10-2002
MS1337
ELECTRICAL ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
BVCES BVCEO BVEBO ICBO HFE IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V
STATIC STAT STATIC
Test Conditions Min.
VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA 36 18 4.0 --20
Value Typ.
-----------
Max.
------5 200
Unit
V V V mA ---
DYNAMIC DYNAMIC
Symbol
POUT GP Cob f =175 MHz f =175 MHz f =1 MHz
Test Conditions Min.
PIN = 3.0 W PIN = 3.0 W VCB = 15 V VCE =12.5 V VCE =12.5 V 30 10 ---
Value Typ.
-------
Max.
----120
Unit
W dB pf
IMPEDANCE IMPEDANCE DATA
FREQ 175 MHz PIN = 3.0W VCE = 12.5V ZIN(Ω) 1.0 +j0.4 ZCL(Ω) 2.3 + j0.1
053-7069 Rev - 10-2002
MS1337
PACKAGE PACKAGE MECHANICAL DATA
053-7069 Rev - 10-2002
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