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MS1403
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS Features F eatures
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175 MHz 7.5 Volts Common Emitter POUT = 1.4 W Min. GP = 7.0 dB Gain
DESCRIPTION:
The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCER VCES VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
36 16 36 4.0 0.75 5.0 +200 -65 to +150
V V V V A W °C °C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 35 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1403
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC
Symbol Test Conditions Min. Value Typ. Max. Units
BVCES BVCEO BVEBO
ICER ICBO
hFE
IC = 5 mA IC = 25 mA IE = 1 mA VCE =10 V VCB =15 V VCE = 5 V
VBE = 0 V IB = 0 mA IC = 0 mA RBE = 80¿ IE = 0 mA IC = 100 mA
36 16 4.0 0.5 1.0 200
V V V mA mA
40
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Units
POUT GP COB
f = 150 MHz f = 150 MHz f = 1 MHz
VCC = 7.5 V VCC = 7.5 V VCB = 7.5 V
1.4 11.5 6.5
W dB pF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1403
PACKAGE MECHANICAL DATA PACKAGE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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