140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS1454
RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS Features F eatures
• • • • • • • • • • • Gold Metallization Diffused Emitter Ballasting Internal Input Matching Designed for Linear Operation High Saturated Power Capability Common Emitter Configuration POUT 30 W MIN Gain 7.5 dB Efficiency 55% (Typ) 20:1 VSWR Overdrive Survivability 5 dB
DESCRIPTION: D ESCRIPTION:
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) A BSOLUTE
Symbol Parameter Value Unit
VCBO VCEO VEBO PDISS IC Tj T stg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Power Dissipation Collector Current Junction Temperature Storage Temperature
48 25 3.5 88 7.5 +200 -65 to +150
V V V W A °C °C
THERMAL DATA THERMAL
RTH(j-c) Junction-Case Thermal Resistance 2 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1454
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC
Symbol Test Conditions Min. Value Typ. Max. Unit
BVCES BVEBO BVCEO BVCER ICBO hFE
IC = 100 mA IE = 10 mA IC = 40 mA IE = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 100 Ω
48 3.5 25 30 --15
55 5 28 40 --40
----------100
V V V V mA ---
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Unit
POUT ηC GP COB IMD3 VSWR1 VSWR2 OVD
f = 860 MHz ICQ = 60 mA VCE = 25 V f = 860 MHz ICQ = 60 mA VCE = 25 V f = 860 MHz ICQ = 60 mA VCE = 25 V VCB = 25 V f0 = 1 MHz POUT = 30 W PEP f1 = 860.0 MHz f2 = 860.1 MHz VSWR = 20:1 VCE = 25 V VSWR = 10:1 VCE= 25 V ± 20% VSWR = 5:1 VCE = 25 V ± 20% PIN = PIN (norm) + 3 dB PIN(norm) = +5dB VCE = 25 V PIN(norm) = +5dB VCE = 25 V ± 20%
30 --7.5 -----
--55 9 42 –35
-----------
W % DB pF dBc Typ. Typ. Typ.
NO DEGRADATION IN OUTPUT DEVICE NO DEGRADATION IN OUTPUT DEVICE NO DEGRADATION IN OUTPUT DEVICE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1454
IMPEDANCE DATA IMPEDANCE
Freq. ZIN (Ω ) ZCL (Ω )
800 MHz 830 MHz 860 MHz 900 MHz 915 MHz 930 MHz 945 MHz 960 MHz
4.3 + j 5.8 3.2 + j 6.1 3.5 + j 7.1 5.3 + j 6.4 6.1 + j 6.3 9.4 + j 6.3 6.6 + j 3.0 5.9 + j 1.0
3.5 + j 0.2 3.5 + j 0.1 2.9 – j 0.2 2.0 – j 0.6 3.2 – j 0.7 3.2 – j 1.1 3.3 – j 1.2 3.4 – j 1.5
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1454
TEST CIRCUIT T EST
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1454
PACKAGE MECHANICAL DATA PACKAGE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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