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MS1454

MS1454

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MS1454 - RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS - Advanced Power Technology

  • 数据手册
  • 价格&库存
MS1454 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1454 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS Features F eatures • • • • • • • • • • • Gold Metallization Diffused Emitter Ballasting Internal Input Matching Designed for Linear Operation High Saturated Power Capability Common Emitter Configuration POUT 30 W MIN Gain 7.5 dB Efficiency 55% (Typ) 20:1 VSWR Overdrive Survivability 5 dB DESCRIPTION: D ESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) A BSOLUTE Symbol Parameter Value Unit VCBO VCEO VEBO PDISS IC Tj T stg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Power Dissipation Collector Current Junction Temperature Storage Temperature 48 25 3.5 88 7.5 +200 -65 to +150 V V V W A °C °C THERMAL DATA THERMAL RTH(j-c) Junction-Case Thermal Resistance 2 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1454 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCES BVEBO BVCEO BVCER ICBO hFE IC = 100 mA IE = 10 mA IC = 40 mA IE = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 100 Ω 48 3.5 25 30 --15 55 5 28 40 --40 ----------100 V V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT ηC GP COB IMD3 VSWR1 VSWR2 OVD f = 860 MHz ICQ = 60 mA VCE = 25 V f = 860 MHz ICQ = 60 mA VCE = 25 V f = 860 MHz ICQ = 60 mA VCE = 25 V VCB = 25 V f0 = 1 MHz POUT = 30 W PEP f1 = 860.0 MHz f2 = 860.1 MHz VSWR = 20:1 VCE = 25 V VSWR = 10:1 VCE= 25 V ± 20% VSWR = 5:1 VCE = 25 V ± 20% PIN = PIN (norm) + 3 dB PIN(norm) = +5dB VCE = 25 V PIN(norm) = +5dB VCE = 25 V ± 20% 30 --7.5 ----- --55 9 42 –35 ----------- W % DB pF dBc Typ. Typ. Typ. NO DEGRADATION IN OUTPUT DEVICE NO DEGRADATION IN OUTPUT DEVICE NO DEGRADATION IN OUTPUT DEVICE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1454 IMPEDANCE DATA IMPEDANCE Freq. ZIN (Ω ) ZCL (Ω ) 800 MHz 830 MHz 860 MHz 900 MHz 915 MHz 930 MHz 945 MHz 960 MHz 4.3 + j 5.8 3.2 + j 6.1 3.5 + j 7.1 5.3 + j 6.4 6.1 + j 6.3 9.4 + j 6.3 6.6 + j 3.0 5.9 + j 1.0 3.5 + j 0.2 3.5 + j 0.1 2.9 – j 0.2 2.0 – j 0.6 3.2 – j 0.7 3.2 – j 1.1 3.3 – j 1.2 3.4 – j 1.5 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1454 TEST CIRCUIT T EST Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1454 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1454 价格&库存

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