MS1455

MS1455 RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features Features • • • • • 836 MHz 12.5 VOLTS POUT = 45 WATTS GP = 4.7 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. ABSOLUTE MAXIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VEBO VCEO VCES PDISS IC TJ TSTG Parameter Value 36 4.0 18 36 150 9.0 200 -65 to +150 Unit V V V V W A °C °C Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Thermal Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.2 °C/W 053-7078 Rev - 10-2002 MS1455 ELECTRICAL ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC STATIC Symbol BVCES BVCEO BVEBO ICBO HFE IC = 50 mA IC = 50 mA IE = 10 mA VCB = 15 V VCE = 5 V Test Conditions Min. VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 A 36 18 4.0 --5 Value Typ. ----------- Max. ------5 200 Unit V V V mA --- DYNAMIC DYNAMIC Symbol POUT GP COB f = 836 MHz f = 836 MHz f =1 MHz Test Conditions Min. PIN = 15W PIN = 15W VCB = 12.5 V VCE = 12.5V VCE = 12.5V 45 4.7 --- Value Typ. ------- Max. ----105 Unit W dB pf IMPEDANCE IMPEDANCE DATA FREQ 806 MHz 836 MHz 866 MHz PIN = 15W VCE = 12.5V ZIN(Ω) 1.4 – j4.6 2.0 – j5.2 2.3 – j5.3 ZCL(Ω) 1.0 – j1.5 0.95 – j1.7 0.75 – j1.7 TEST TEST CURCUIT 053-7078 Rev - 10-2002 MS1455 053-7078 Rev - 10-2002 MS1455 PACKAGE MECHANICAL DATA PACKAGE MECHANICAL 053-7078 Rev - 10-2002