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MS1503

MS1503

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MS1503 - RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS - Advanced Power Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MS1503 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1503 RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS Features F eatures • • • • • • 400 MHz 28 VOLTS GOLD METALIZATION POUT = 100 WATTS GP = 7.0 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: D ESCRIPTION: The MS1503 is a 28V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. The device utilizes diffused emitter resistors to achieve infinite VSWR capability under operating conditions. Internal inpedance matching produces optimum power gain and efficiency over the 225-400MHz band. A BSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 60 33 4.0 4.0 250 +200 -65 +150 Unit V V V A W °C °C Thermal Data Thermal RTH(J-C) Thermal Resistance Junction-case 0.7 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1503 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL Symbol BVCBO BVCEO BVEBO ICES HFE IC = 100 mA IC = 50 mA IE = 20 mA VCB = 28 V VCE = 5 V STATIC S TATIC Test Conditions IE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 1 A Min. 60 33 4.0 --20 Value Typ. ----------- Max. ------25 200 Unit V V V mA --- DYNAMIC DYNAMIC Symbol POUT GP ηC Cob f = 400 MHz f = 400 MHz f = 400 MHz f =1 MHz Test Conditions PIN = 20W PIN = 20W PIN = 20W VCB = 28V VCE = 28V VCE = 28V VCE = 28V Min. 100 7.0 50 --- Value Typ. --------- Max. ------105 Unit W dB % pf IMPEDANCE DATA IMPEDANCE FREQ 225 MHz 300 MHz 350 MHz 375 MHz 400 MHz PIN = 20 W VCE = 28 V ZIN(Ω) 1.3 + j1.8 1.1 + j2.4 0.8 + j3.0 0.75 + j3.5 0.70 + j3.6 ZCL(Ω) 5.4 – j0.5 3.9 – j0.7 2.6 – j1.0 2.2 – j1.4 1.8 – j1.9 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1503 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS1503
物料型号: - 型号名称:MS1503

器件简介: - MS1503是一款28V的C类外延硅NPN平面晶体管,主要设计用于UHF通信。该器件采用扩散发射极电阻,以在工作条件下实现无限的VSWR能力。内部阻抗匹配在225-400MHz频段内产生最佳功率增益和效率。

引脚分配: - 1. Collector(集电极) - 3. Base(基极) - 2. Emiter(发射极) - 4.Emiter(发射极)

参数特性: - 绝对最大额定值(Tcase = 25°C): - VCBO(集电极-基极电压):60V - VCEO(集电极-发射极电压):33V - VEBO(发射极-基极电压):4.0V - Ic(器件电流):4.0A - PDISS(功率耗散):250W - T(结温):+200℃ - TSTG(储存温度):-65至+150℃ - 热阻(RTJ(C-C)):0.7℃/W

功能详解: - 电气规格(Tcase = 25°C): - 静态参数: - BVCBO(集电极-基极击穿电压):60V - BVCEO(集电极-发射极击穿电压):33V - BVEBO(发射极-基极击穿电压):4.0V - ICES(集电极静态电流):25mA - HFE(电流增益):20至200 - 动态参数: - POUT(输出功率):在400MHz时,PIN=20W,VCE=28V,输出功率为100W - Gp(功率增益):在400MHz时,PIN=20W,VCE=28V,功率增益为7.0dB - nc(噪声系数):在400MHz时,PIN=20W,VCE=28V,噪声系数为50% - Cob(输出电容):在1MHz时,VcB=28V,输出电容为105pf

应用信息: - MS1503晶体管主要用于VHF/UHF频段的宽带应用。

封装信息: - 封装机械数据(单位为英寸/毫米): - A:0.150/3.43至0.160/4.06 - B:0.045至1.14 - C:0.210/5.33至0.220/5.59 - D:0.835/21.21至0.865/21.97 - E:0.200/5.08至0.210/5.33 - F:0.490/12.45至0.510/12.95 - G:0.003/0.08至0.007/0.18 - H:0.125/3.18
MS1503 价格&库存

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