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MS2200

MS2200

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MS2200 - RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS - Advanced Power Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
MS2200 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features F eatures • • • • • • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 0.15 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2200 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCBO BVCES BVEBO ICES hFE IC = 50 mA IC = 50 mA IE = 10 mA VCE =30 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 5 A 65 65 3.5 20 15 200 V V V mA DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP ηC Note: f = 425 MHz f = 425 MHz f = 425 MHz PIN = 54 W PIN = 54 W PIN = 54 W VCE = 40 V VCE = 40 V VCE = 40 V 500 9.7 50 W Db % Pulse Width = 250µSec, Duty Cycle = 10% This device is suitable for use under other pulse width/duty cycle conditions. Please contact the factory for specific applications assistance. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2200 TYPICAL PERFORMANCE T YPICAL Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2200 TYPICAL PERFORMANCE (CONTINUED) T YPICAL (CONTINUED) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2200 TEST CIRCUIT T EST Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2200 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2200
物料型号: - 型号为MS2200。

器件简介: - MS2200是一款密封的、金金属化硅NPN脉冲功率晶体管,采用共基平衡配置。该晶体管设计用于在400-500MHz频率范围内需要高峰值功率和低占空比的应用。

引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极) - 4. Base(基极)

参数特性: - 绝对最大额定值(Tcase = 25°C): - VCBO:Collector-Base Voltage(集电极-基极电压)65V - VcES:Collector-Emitter Voltage(集电极-发射极电压)65V - VEBO:Emitter-Base Voltage(发射极-基极电压)3.5V - Ic:Device Current(器件电流)43.2A - PDISS:Power Dissipation(功率耗散)1167W - TJ:Junction Temperature(结温)+200°C - TSTG:Storage Temperature(储存温度)-65 to +150°C

功能详解: - MS2200具有500瓦特在250微秒脉冲宽度、10%占空比下的脉冲功率,具有输入匹配、共基配置、无限VSWR能力等特点,适用于UHF脉冲应用。

应用信息: - 适用于需要高峰值功率和低占空比的应用,特别是在400-500MHz的频率范围内。

封装信息: - 封装为.400x.500 4LFL(M102),是一种密封封装。
MS2200 价格&库存

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