MS652S

MS652/MS652S RF & MICROWAVE TRANSISTORS ESCRIPTION KEY FEATURES The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions. § 512 MHz § 12.5 Volts § Common Emitter § POUT = 5 W Min. § GP = 10.0 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS MS652 MS652S § UHF Portable/Mobile Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 16 4.0 2 25 +200 -65 to +150 Unit V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 7 °C/W MS652.PDF 12-04-03 Page 1 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS652/MS652S RF & MICROWAVE TRANSISTORS STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol BVCES BVCEO BVCBO BVEBO ICES hFE IC = 25 mA IC = 50 mA IC = 25 mA IE = 5 mA VCE =15 V VCE = 5 V Test Conditions VBE = 0 IB = 0 IE = 0 IC = 0 VBE = 0 IC = 200 mA Min. 36 16 36 4.0 10 MS652S Typ. Max. Units V V V V mA 1.0 150 DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) Symbol POUT GP η COB Test Conditions f = 512 MHz VCC = 12.5 V f = 512 MHz VCC = 12.5 V f = 512 MHz VCC = 12.5 V POUT = 5 W f = 1 MHz VCB = 15 V Min. 5 10 60 MS652S Typ. Max. Units W dB % pF 15 LARGE SIGNAL IMPEDANCE DATA Frequency MHz 400 440 470 512 Conditions ZIN 1.2 + j0.6 1.2 + j0.9 1.2 + j1.2 1.2 + j1.5 Vcc = 12.5V, Pout = 5W ZCL 6.5 + j6.5 7.2 + j6.0 7.7 + j5.3 8.3 + j4.5 Units Ω Ω Ω Ω MS652.PDF 12-04-03 Page 2 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS652/MS652S RF & MICROWAVE TRANSISTORS TEST CIRCUIT MS652.PDF 12-04-03 Page 3 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS652/MS652S RF & MICROWAVE TRANSISTORS PACKAGE OUTLINE ______________________________________________________________________ MS652.PDF 12-04-03 Page 4 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.