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MSC4001

MSC4001

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    MSC4001 - RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - Advanced Power Techn...

  • 详情介绍
  • 数据手册
  • 价格&库存
MSC4001 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MSC4001 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features F eatures • • • 3:1 VSWR AT RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: D ESCRIPTION: The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T CASE = 25 ° C) A BSOLUTE 25 Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 7.0 0.25 30 +200 -65 to +200 W A V °C °C THERMAL DATA THERMAL RTH(j-c) Junction-Case Thermal Resistance* 25 ° C/W *Applies only to rated RF amplifier operation Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MSC4001 ELECTRICAL SPECIFICATIONS (T CASE = 25 ° C) E LECTRICAL 25 STATIC Symbol Test Conditions Min. Value Typ. Max. Unit BVCBO BVEBO BVCER ICBO hFE IC = 1 mA IE = 1 mA IC = 5 mA VBE = 28 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 100 mA 45 3.5 45 --15 ----------- ------0.5 120 V V V mA --- DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηC GP COB f = 4.0 GHz f = 4.0 GHz f = 4.0 GHz f = 1 MHz PIN = 0.32 W PIN = 0.32 W PIN = 0.32 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 1.0 25 5.0 --- 1.2 27 5.8 --- ------3.6 W % dB pF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MSC4001 IMPEDANCE DATA IMPEDANCE Freq. ZIN (Ω ) ZCL (Ω ) 2.0 GHz 2.3 GHz 3.0 GHz 3.5 GHz 4.0 GHz 4.4 GHz 7.5 + j 15.0 11.0 + j 29.0 65.0 + j 42.5 65.0 – j 27.5 53.0 – j 42.5 33.0 – j 48.0 10.0 + j 18.0 8.5 + j 13.0 6.0 + j 0.0 5.0 – j 8.5 5.0 – j 10.0 9.0 – j 22.0 TEST CIRCUIT T EST Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MSC4001 PACKAGE MECHANICAL DATA PACKAGE Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MSC4001
1. 物料型号: - 型号:MSC4001

2. 器件简介: - MSC4001是一款共基极、密封的硅NPN微波功率晶体管,具有独特的Microgrid®结构,能在额定条件下承受3:1的VSWR(电压驻波比)在任何相位角。它被设计用于2.0-4.4 GHz频率范围内的C类放大器应用。

3. 引脚分配: - 1. Collector(集电极) - 2. Emitter(发射极) - 3. Base(基极) - 4. Emitter(发射极)

4. 参数特性: - 最大耗散功率(PDISs):7.0 W - 设备电流(Ic):0.25 A - 集电极供电电压(Vcc):30 V - 结温(TJ,脉冲RF操作):+200°C - 存储温度(TSTG):-65至+200°C

5. 功能详解: - MSC4001能在4.0 GHz频率下,以5.0 dB的增益和1.0 W的最小输出功率工作。它还具有低噪声和高增益特性,适合用于射频和微波放大器应用。

6. 应用信息: - 适用于2.0-4.4 GHz频率范围内的C类放大器应用。

7. 封装信息: - 封装风格为M210,具体尺寸如下(单位为英寸): - 长度:0.028/0.71 - 宽度:0.110/2.80 - 高度:0.245/6.22 - 其他尺寸:0.255/6.48, 0.165/4.19, 0.790/20.07, 0.810/20.57, 0.740/18.80, 0.128/3.25, 0.132/3.35, 0.225/5.72, 0.149/2.30, 0.003/0.08, 0.117/2.97, 0.058/1.47
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