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SD1224-02

SD1224-02

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    SD1224-02 - RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS - Advanced Power Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
SD1224-02 数据手册
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1224-02 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features F eatures • • • • • • • 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 35 65 4.0 5.0 60 +200 -65 to +150 V V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 2.9 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1224-02 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC Symbol Test Conditions Value Min. Typ. Max. Units BVCBO BVCES BVCEO BVEBO IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5 V IB = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA 65 65 35 4.0 1 5 V V V V mA ICBO hFE DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Units POUT ηC GP COB f = 175 MHz f = 175 MHz f = 175 MHz f = 1 MHz PIN = 7.0 W PIN = 7.0 W PIN = 7.0 W VCB = 30 V VCE = 28 V VCE = 28 V VCE = 28 V 40 60 7.6 65 W % dB pF Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1224-02 TEST CIRCUIT T EST Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1224-02 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
SD1224-02
1. 物料型号: - 型号为SD1224-02。

2. 器件简介: - SD1224-02是一种外延平面硅NPN晶体管,主要设计用于28V FM Class C RF放大器,常用于地面站发射器。该器件采用阻尼发射极电阻和改进的金属化系统,以实现最佳的负载失配能力。

3. 引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极)

4. 参数特性: - 工作频率:175 MHz - 电压等级:28伏特 - Class C共射效率:最小60% - 输出功率:最小40瓦特 - 增益:7.6 dB

5. 功能详解: - 该晶体管设计用于高效率和高功率的FM无线电频段应用,特别是在VHF调频应用中。它通过使用阻尼发射极电阻和改进的金属化系统来优化负载失配能力,从而提高性能和可靠性。

6. 应用信息: - 主要应用于28V FM Class C RF放大器,特别是在地面站发射器中。

7. 封装信息: - 封装类型为.380 4LFL(M113)环氧树脂密封。 - 提供了详细的机械尺寸数据,包括英寸和毫米单位的最小和最大尺寸。
SD1224-02 价格&库存

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