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SD1420-01
RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features F eatures
• • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN
DESCRIPTION:
The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A operation Cellular Base Station applications. The SD1420-01 is also available in a stud package as the SD1420.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
40 28 3.5 .250 7 + 200 –55 to +150
V V V A W °C °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 20 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
SD1420-01
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC
Symbol Test Conditions Value Min. Typ. Max. Units
BVCBO BVCEO BVEBO ICES hFE
IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V VCE = 5 V IC = .1 A
40 28 3.5 .5 20 120
V V V mA
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Units
POUT GP COB
f = 960 MHz f = 960 MHz f = 1 MHz
VCE = 24 V VCE = 24 V VCB = 28 V
ICQ = 200 mA ICQ = 125 mA
2.1 8.9 9.0 5.0
W dB pF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
SD1420-01
PACKAGE MECHANICAL DATA PACKAGE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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