012-151-001

Surface-Mount InGaAs Photodetector SD 012-151-001 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Image shown is a representation representation DESCRIPTION The SD 012-151-001 is a high sensitivity, low noise, 0.3 mm2 diameter active area InGaAs photodiode (chip dimensions 0.44mm x 0.44mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. The photodetector is assembled in a 1206 package. FEATURES  Low Noise,  High Sensitivity  Detection at SWIR and NIR RELIABILITY This API high-reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) after proper screening and group test. Contact API for recommendations on specific test conditions and procedures. APPLICATIONS  Industrial Sensing  Security and Defense  Communication  Medical Ta = 23°C non condensing 1/16 inch from case for 3 seconds max ABSOLUTE MAXIMUM RATINGS SYMBOL MIN Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Wavelength Range -40 -55 400 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. MAX UNITS 40 +125 +100 +260 1100 V °C °C °C nm REV 01-26-15 Page 1/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Surface-Mount InGaAs Photodetector SD 012-151-001 Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM Ta = 23°C unless noted otherwise ELECTRO-OPTICAL CHARACTERISTICS RATINGS PARAMETER TEST CONDITIONS MIN Ibias = 1 A = 1310 nm,Vr=5V Vbias = 10 mV Vbias = 5V Vbias = 5V; f = 1.0 MHz Vbias = 5V; = 1310 nm Vr= 5V@ =1310 Breakdown Voltage Responsivity Shunt Resistance Dark Current Capacitance Rise Time (50 load) Spectral Range Noise Equivalent Power TYP 0.80 0.2 800 - MAX 50 0.90 1.0 5.0 1.6 1.2 -15 4.0x10 UNITS 10.0 1700 - V A/W G nA pF ns nm 1/2 W/Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs. REVERSE BIAS Reverse Dark Current [A] Noise Current (A/rt_Hz) 1.E-12 Noise current @ 23C 1.E-13 1.E-14 1.E-15 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 1.E-09 1.E-11 1.E-13 1.E-03 1.E+02 Reverse dark current @ 23 C 1.E-07 1.E-02 SPECTRAL RESPONSE 1.E+00 1.E+01 1.E+02 CAPACITANCE vs REVERSE BIAS 1 23 0.9 21 Typical Responsivity 0.8 0.6 0.5 0.4 0.3 0.2 0.1 17 15 13 11 9 7 0 600 Typical Capacitance at 1 MHz 19 0.7 Capacitance [pF] Responsivity [A/W] 1.E-01 Reverse Voltage [V] Reverse Voltage (V) 800 1000 1200 1400 1600 5 1800 0 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 5 10 15 20 Reverse Bias [V] Wavelength [nm] REV 01-26-15 Page 2/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935