039-151-001

Surface Mount InGaAs Photodetector PRELIMINARY SD 039-151-001 Precision – Control – Results WWW.LUNAINC.COM DESCRIPTION FEATURES 2 The SD 039-151-001 is a high sensitivity, low noise, 1 mm diameter active area InGaAs photodiode (chip dimensions 1.36mmx1.36mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. Photodetector assembled in a 1210 package.    RELIABILITY APPLICATIONS Contact Luna for recommendations on specific test conditions and procedures.     Low Noise High Sensitivity Detection at SWIR and NIR Industrial Sensing Security and Defense Communication Medical ABSOLUTE MAXIMUM RATINGS SYMBOL Reverse Voltage MIN MAX UNITS - - 40 V Ta = 23°C non condensing 1/16 inch from case for 3 seconds max Operating Temperature 40 to +100 °C - Storage Temperature -55 to +125 °C - - - +260 °C - Soldering Temperature Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 06-14-17 Page 1/3 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Surface Mount InGaAs Photodetector PRELIMINARY SD 039-151-001 Precision – Control – Results WWW.LUNAINC.COM Ta = 23°C UNLESS NOTED OTHERWISE OPTO-ELECTRICAL PARAMETERS TEST CONDITIONS PARAMETER MIN TYP MAX UNITS Breakdown Voltage Ibias = 1 A 20 - 40 V Spectral Range  800 - 1700 nm Responsivity = 1310 nm, Vr=5V 0.8 0.9 - A/W Shunt Resistance Vbias = 10 mV 40 200 - M Dark Current Vbias = 5V - 0.2 10 nA Capacitance Vbias = 0V; f = 1 MHz - 70 8 pF Rise Time (50 load)** Vbias = 5V; = 1310 nm - 2.0 - ns Noise Equivalent Power VR 5V@ = 1310 - - fW/√Hz 1.0x10 -14 **Response time of 10% to 90%. SOLDERING RECOMMENDATION Wave Not Advised IR Oven Reflow Allowed See reflow profile. Forced Convection Reflow Recommended See reflow profile. Convection Reflow Recommended See reflow profile. Vapor Phase Reflow Recommended See reflow profile. Manual Not Advised 260°C for 3 seconds max. Moisture Sensitivity Level 3 J-STD-033 TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs REVERSE BIAS 1.E-12 1.E-04 1.E-05 1.E-06 Reverse dark current @ 23 C Reverse Dark Current [A] Noise Current (A/rt_Hz) Noise current @ 23C 1.E-13 1.E-14 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1.E-15 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-13 1.E-03 1.E+02 Reverse Voltage (V) Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 Reverse Voltage [V] REV 06-14-17 Page 2/3 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 Surface Mount InGaAs Photodetector PRELIMINARY SD 039-151-001 Precision – Control – Results WWW.LUNAINC.COM SPECTRAL RESPONSE DARK CURRENT vs TEMPERATURE 170 1 0.9 150 Typical Responsivity Typical Capacitance at 1 MHz 130 0.7 Capacitance [pF] Responsivity [A/W] 0.8 0.6 0.5 0.4 0.3 110 90 70 0.2 50 0.1 0 30 600 800 1000 1200 1400 1600 1800 0 Wavelength [nm] 5 10 15 20 Reverse Bias [V] REFLOW PROFILE Noise Voltage [Vrms/Hz 1/2] 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 0.01 0.10 1.00 10.00 100.00 1,000.00 Frequency [kHz] Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 06-14-17 Page 3/3 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935