0800-3111-011

InGaAs Photodetector PRELIMINARY Advanced Photonix, Inc. SD039-151-011 Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM DESCRIPTION The SD039-151-011 is a high sensitivity, low noise, 1 mm diameter active area InGaAs photodiode (chip dimensions 1.36mmx1.36mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. Photodetector assembled in a TO-46 package. FEATURES  Low Noise,  High Sensitivity  Detection at SWIR and NIR RELIABILITY This API high-reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) after proper screening and group test. Contact API for recommendations on specific test conditions and procedures. APPLICATIONS  Industrial Sensing  Security and Defense  Communication  Medical ABSOLUTE MAXIMUM RATINGS Ta = 23°C non condensing 1/16 inch from case for 3 seconds max SYMBOL MIN MAX Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature -40 -55 - 40 +100 +125 +260 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. UNITS V °C °C °C REV 11-26-14 Page 1/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 InGaAs Photodetector PRELIMINARY Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM ELECTRO-OPTICAL CHARACTERISTICS RATINGS PARAMETER TEST CONDITIONS Ta = 23°C unless noted otherwise MIN Ibias = 1 A Breakdown Voltage Spectral Range Responsivity Shunt Resistance Dark Current Capacitance Rise Time (50 load) Noise Equivalent Power SD039-151-011 TYP 20 800 0.8 40 -  = 1310 nm,Vr=5V Vbias = 10 mV Vbias = 5V Vbias = 5V; f = 1.0 MHz Vbias = 5V; = 1310 nm Vr= 5V@ =1310 MAX 0.9 200 0.2 70 2.0 -14 1.0x10 - UNITS 40 1700 10 150 - V nm A/W M nA pF ns fW/√Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs. REVERSE BIAS 1.E-12 1.E-04 1.E-05 Reverse Dark Current [A] Noise Current (A/rt_Hz) 1.E-06 1.E-13 1.E-14 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-15 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-12 1.E-03 1.E+02 1.E-02 Reverse Voltage (V) 1.E-01 1.E+00 1.E+01 1.E+02 Reverse Voltage [V] SPECTRAL RESPONSE CAPACITANSE vs. REVERSE BIAS 0.95 165 0.85 145 125 0.65 Capacitance [pF] Responsivity,A/W 0.75 0.55 0.45 0.35 0.25 105 85 65 45 25 0.15 5 0.05 680 880 1080 1280 1480 0 1680 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 5 10 15 20 Reverse Bias [V] Wavelenght, nm REV 11-26-14 Page 2/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935