PDB-707-100DC

PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY Type PDB-707-100-XX DETECTORS INC. CAUTION: ESD SENSITIVE DEVICE DESCRIPTION PDB-707-100-XX This 32 channel Pre-Amplifier Board Assembly (PABA) is a side-by-side stackable platform with built-in voltage regulators, and eight precision CMOS quad op-amps. Low offset voltages and input bias currents, enhance operational stability at high voltage gains. Standard one meg feedback resistors produce a 1 KHz bandwidth, with optional selected resistors available. The following options can be used with this PABA. DESCRIPTION - OPTION D PDB-707-100-D This option is designed to use two 16 element, blue enhanced silicon photodiode arrays. The arrays are on .062 [1.27] pitch with .010 [0.25] gaps. Each element is 2.51 mm2 in size. The low leakage, high shunt detectors match up well with the CMOS op-amps on the PABA. This version can be used for optical color sorters, food processing, inspection equipment, optical scanners, and other multi-element photodiode array applications. DESCRIPTION - OPTION DS PDB-707-100-DS This option is designed to use two PDB-C216S, 16 element, blue enhanced silicon photodiode arrays, with X-ray fluoroscopic screens. The ZnCdS:Ag phosphorus doped screen emission spectrum is 530 nm (green). X-ray absorbtion is 9.66/26.7 KeV, with an effective atomic number of 38.4. This version is ideal for X-ray package inspection, diagnostic fluoroscopy and PCB examination. DESCRIPTION - OPTION DC PDB-707-100-DC This option is designed to use two PDB-C216C, 16 element, blue enhanced silicon photodiode arrays, with cesium iodide thallium doped CsI (Ti), X-ray scintillation crystals. These arrays are used in 40 KeV to 120 Kev X-ray applications. Other uses include medical CT, baggage scanners, food processing and X-ray package inspection scanners. Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. PAGE 1 OF 6 [FORM NO. 100-PDB-707-100-XX REV E] PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY Type PDB-C216-SP Used on PDB-707-100-D DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] C L CL ±.005 [.13] .992 [25.20] .062 [1.57] ACTIVE AREA .100 [2.54] 1 3 .373 [9.47] .062 [1.57] .800 [20.32] 16X ANODE 5 7 9 11 13 15 17 COMMON CATHODE CL .145 [3.69] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 .072 [1.84] ACTIVE AREA .300 [7.62] .425 [10.80] 2X Ø.018 ROUND PIN HEADER STRIP CL 2 4 6 8 10 12 14 16 18 COMMON CATHODE .100 [2.54] ACTIVE AREA CL C TYP L ANODE 16 PLACES .010 [0.25] GAP .048 [1.22] ACTIVE AREA ELEMENT NO. 1 2 3 4 5 6 7 8 9 PIN CONNECTIONS PIN NO. ELEMENT NO. 1 10 4 11 3 12 6 13 5 14 8 15 7 16 10 CATHODE 9 CATHODE PIN NO. 12 11 14 13 16 15 18 2 17 .229 [5.82] 16 ELEMENT PHOTODIODE PACKAGE ACTIVE AREA = 2.31mm2 PER ELEMENT DESCRIPTION The PDB-C216-SP is a common cathode, monolithic silicon PIN photodiode 16 element array. Designed to be stacked end to end to form a line of optical pixels. -20 +75 O TS Soldering Temperature* +265 O IL Light Current C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 Operating Temperature Range 0.4 1100 TO C 900 O 1000 +100 800 -40 % 00 =1 E Q 0.5 700 Storage Temperature 0.6 600 TSTG 500 V 500 50 400 Reverse Voltage 300 VBR SPECTRAL RESPONSE 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS APPLICATIONS Card reader Scanners Character recognition RESPONSIVITY (A/W) FEATURES .062 inch centers Stackable Blue enhanced Low capacitance WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 5 V RSH Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ 18 mA 28 5 50 nA 200 MΩ H = 0, V R = 10 mV -8 % / oC Junction Capacitance H = 0, V R = 0 V** 40 λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan VBR Breakdown Voltage I = 10 m A NEP Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 50 Ω VR = 10 V tr 100 350 15 60 pF 1100 nm 950 nm 30 V 2x10-14 15 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDB-707-100-XX REV E] are subject to change without notice. ** f = 1 MHz PAGE 2 OF 6 PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY Type PDB-C216-S Used on PDB-707-100-DS DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] CL CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .373 [9.47] .800 [20.32] 16X ANODE 5 7 9 11 13 15 17 3 .062 [1.57] COMMON CATHODE C L .145 [3.69] .300 [7.62] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 .072 [1.84] ACTIVE AREA .425 [10.80] 2X Ø.018 ROUND PIN HEADER STRIP C L 2 4 6 8 10 12 14 16 18 SCREEN COMMON CATHODE .100 [2.54] ACTIVE AREA C TYP L C L ANODE 16 PLACES .010 [0.25] GAP .048 [1.22] ACTIVE AREA ELEMENT NO. 1 2 3 4 5 6 7 8 9 PIN CONNECTIONS PIN NO. ELEMENT NO. 1 10 4 11 3 12 6 13 5 14 8 15 7 16 10 CATHODE 9 CATHODE PIN NO. 12 11 14 13 16 15 18 2 17 .229 [5.82] .277 [7.04] FLUOROSCOPIC X-RAY SCREEN IS A 19.0% EFFICIENT, ZnCdS:Ag PHOSPHORUS DOPED SCREEN WITH A 530 nm (GREEN) EMISSION FOR 9.66/26.7 KeV X-RAY ABSORPTION APPLICATIONS. 16 ELEMENT X-RAY PHOTODIODE PACKAGE WITH SCINTILLATION SCREEN ACTIVE AREA = 2.31mm2 PER ELEMENT APPLICATIONS Luggage X-ray X-Ray scanner X-Ray inspection DESCRIPTION The PDB-C216-S is a common cathode, monolithic silicon PIN photodiode 16 element array. Designed to be stacked end to end to form a line of pixels. Supplied with a fluoroscopic X-ray scintillation screen. +75 O +265 O IL Light Current 500 C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 -20 1100 Operating Temperature Range 0.4 900 TO C 1000 O 800 +100 700 -40 % 00 =1 QE 0.5 600 Storage Temperature Soldering Temperature* V 500 TSTG TS 50 400 Reverse Voltage 0.6 300 VBR SPECTRAL RESPONSE 0.7 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS RESPONSIVITY (A/W) FEATURES .062 inch centers Stackable Scintillation screen Low capacitance WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 5 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ 18 mA 28 5 50 nA 200 MΩ H = 0, V R = 10 mV -8 % / oC Junction Capacitance H = 0, V R = 0 V** 40 λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan VBR Breakdown Voltage I = 10 m A RSH NEP tr Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 50 Ω VR = 10 V 100 350 15 60 pF 1100 nm 950 nm 30 V -14 2x10 15 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications [FORM NO. 100-PDB-707-100-XX REV E] are subject to change without notice. ** f = 1 Mhz PAGE 3 OF 6 PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY DETECTORS INC. Type PDB-C216-C Used on PDB-707-100-DC PACKAGE DIMENSIONS INCH [mm] C L CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 3 .373 [9.47] .800 [20.32] 16X ANODE 5 7 9 11 13 15 17 .062 [1.57] COMMON CATHODE CL .145 [3.69] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 .072 [1.84] ACTIVE AREA .300 [7.62] CsI(Ti) CRYSTAL ARRAY .425 [10.80] 2X Ø.018 ROUND PIN HEADER STRIP CL 2 4 6 8 10 12 14 16 18 COMMON CATHODE .100 [2.54] CL C TYP L .010 [0.25] GAP .048 [1.22] ACTIVE AREA ELEMENT NO. 1 2 3 4 5 6 7 8 9 .229 [5.82] ACTIVE AREA ANODE 16 PLACES PIN CONNECTIONS PIN NO. ELEMENT NO. 1 10 4 11 3 12 6 13 5 14 8 15 7 16 10 CATHODE 9 CATHODE PIN NO. 12 11 14 13 16 15 18 2 17 .399 [10.13] X-RAY SCINTILLATOR IS A CESIUM IODIDE, THALLIUM DOPED, CsI(Ti) CRYSTAL. THE EMISSION IS 565 nm AND HAS 99% ABSORPTION OF X-RAY ENERGY. 16 ELEMENT X-RAY PHOTODIODE PACKAGE WITH CsI(Ti) SCINTILLATION CRYSTALS ACTIVE AREA = 2.31mm2 PER ELEMENT DESCRIPTION The PDB-C216-C is a common cathode, monolithic silicon PIN photodiode 16 element array. Designed to be stacked end to end to form a line of pixels. Supplied with X-Ray CsI(Ti) scintillation crystals. -20 +75 O TS Soldering Temperature* +265 O IL Light Current C C mA 0.3 0.2 0.1 0 *1/16 inch from case for 3 secs max 1200 Operating Temperature Range 0.4 1100 TO C 900 O 1000 +100 800 -40 % 00 =1 E Q 0.5 700 Storage Temperature 0.6 600 TSTG 500 V 500 50 400 Reverse Voltage SPECTRAL RESPONSE 0.7 300 VBR APPLICATIONS Luggage X-ray X-Ray scanner X-Ray inspection 190 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS RESPONSIVITY (A/W) FEATURES .062 inch centers Stackable CsI(Ti) crystals Low capacitance WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator) SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, V R = 5 V Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient CJ Junction Capacitance RSH λrange 5 50 nA MΩ H = 0, V R = 10 mV -8 % / oC H = 0, V R = 0 V** 40 Spectral Application Range Spot Scan Spectral Response - Peak Spot Scan VBR Breakdown Voltage I = 10 m A Noise Equivalent Power VR = 10 V @ Peak Response Time RL = 50 Ω VR = 10 V tr mA 28 200 λp NEP 18 100 350 15 60 pF 1100 nm 950 nm 30 V 2x10-14 15 W/ Hz nS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ** f = 1 MHz [FORM NO. 100-PDB-707-100-XX REV E] PAGE 4 OF 6 PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY Type PDB-707-100-XX DETECTORS INC. AMPLIFIER SPECIFICATION PER CHANNEL TA = 25° C, V + = 5 V, V- = 0 V, VC M = 1.5 V, VO = 2.5 V and RL > 1 M CHARACTERISTIC TEST CONDITIONS INPUT OFFSET VOLTAGE (Vos) MIN UNLESS OTHERWISE NOTED TYP MAX UNITS INITIAL OFFSET 350 1000 mV LONG TERM OFFSET STABILITY 15 µV/MONTH AVERAGE INPUT OFFSET DRIFT (TCVos) RL = 100 KΩ 1 µV/°C INPUT BIAS CURRENT (IB) OFFSET CURRENT, VCM=0 INPUT OFFSET CURRENT (I OS) INPUT VOLTAGE RANGE (IVR) COMMON MODE REJECTION VCM ± 10 V INPUT VOLTAGE NOISE (en) 100 pA 100 pA ±12 V VOLTAGE 0, f=100 Hz 40 nV/√Hz VOLTAGE 0, f=1 Khz 30 nV/√Hz INPUT CURRENT NOISE (in) TYP f=1 KHz 1.8 fA/√Hz FREQUENCYRESPONSE UNITY GAIN, SMALL SIGNAL 0.8 1.0 MHz SLEW RATE, UNITY GAIN 1.0 1.8 V/µs 9 Mhz CLOSED LOOP GAIN (CLBW) SUPPLY CURRENT (ISY)* ±11 AVCL=+5 V 27.2 V = +15 V, V0 = 7.5 V mA 15 SHORT CIRCUIT CURRENT POWER SUPPLY 32 OPERATING VOLTAGE mA ±4.5 ±15.5 V NOTE: 8 EACH NATIONAL P/N: LMC6084, CMOS QUAD OPERATIONAL AMPLIFIER USED IN ASSEMBLY. * TOTAL ASSEMBLY SUPPLY CURRENT AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED) PARAMETER MIN MAX UNITS SUPPLY VOLTAGE 16 ±V DIFFERENTIAL INPUT VOLTAGE ±16 V STORAGETEMPERATURE -55 +125 °C OPERATINGTEMPERATURE 0 +70 °C CAUTION: ESD SENSITIVE DEVICE 100 MOhm USER SUPPLIED FEEDBACK RESISTOR IN PARALLEL OR OTHER VALUES SUPPLIED BY FACTORY 1 pF V+ OP AMP + PHOTODIODE OUTPUT VCIRCUIT GROUND SINGLE OP-AMP STAGE SCHEMATIC Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. PAGE 5 OF 6 [FORM NO. 100-PDB-707-100-XX REV E] PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY Type PDB-707-100-XX DETECTORS INC. MECHANICAL DIMENSIONS PACKAGE DIMENSIONS INCH [mm] 5.000 [127.00] CL .188 [4.76] CL 4.624 [117.45] 8X Ø.096 MOUNTING HOLES .235 [5.97] .235 [5.97] C L C L 1.530 [38.86] 1.530 [38.86] 2.000 [50.80] C L C L .876 [22.25] 2.063 [52.40] .313 [7.95] CHIP HEIGHT CL C L CL 2.500 [63.50] CONFORMAL COAT .152 [3.86] DIP SOCKETS .357 [9.07] .545 [13.84] .300 [7.62] .062 [1.57] Ø0.025 TYP .165 [4.19] C L 1.660 [42.16] CL CONFORMAL COAT 3.620 [91.95] .450 [11.43] .240 [6.10] C L C L C L C L ASSEMBLY SHOWN WITH PDB-C216-C IN THIS VIEW ELECTRICAL CONNECTIONS 32 ELEMENT AMPLIFIER CONNECTIONS J3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 PIN DETECTOR CHANNEL GND U7-1 2 U7-14 4 U7-8 6 U7-7 8 U8-1 10 U8-14 12 U8-7 14 U8-8 16 U9-1 18 U9-14 20 U9-8 22 U9-7 24 U10-1 26 U10-14 28 U10-8 30 U10-7 32 GND J2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 PIN DETECTOR CHANNEL GND U3-14 1 U3-1 3 U3-7 5 U3-8 7 U4-14 9 U4-1 11 U4-7 13 U4-8 15 U5-14 17 U5-1 19 U5-7 21 U5-8 23 U6-14 25 U6-1 27 U6-7 29 U6-8 31 GND POWER CONNECTIONS J4 PIN 1 +4.5 TO +15V J1 PIN 1 +4.5 TO +15V PIN 2 COMMON PIN 2 COMMON PIN 3 -4.5 TO -15V PIN 3 -4.5 TO -15V CAUTION: ESD SENSITIVE DEVICE 5.000 [127.00] CL CL .188 [4.76] 1.875 [47.63] ± VOLTAGE SUPPLY .235 [5.97] 4.624 [117.45] C C L L PIN #1 .100 [2.54] .876 [22.25] PIN #2 CL C L C L .150 [3.81] J4 1.530 [38.86] 16 CHANNEL OUTPUTS ± VOLTAGE SUPPLY 2.000 [50.80] J1 CL J3 .450 [11.43] .690 [17.53] J2 .300 [7.62] 8X Ø.096 HOLE C L 3.620 [91.95] C L TOP VIEW CL .165 [4.19] CL C L NOTE: THE SUPPLY VOLTAGE & OUTPUT TERMINALS ARE Ø.025 [Ø0.64] ON .100 [25.4] CENTERS Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. PAGE 6 OF 6 [FORM NO. 100-PDB-707-100-XX REV E]