PDB-C232

Blue Enhanced Linear Array Silicon Photodiode PDB-C232 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .205 [5.20] .350 [8.88] 34 .705 [17.91] .695 [17.65] ELEMENT 1 COMMON CATHODE 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] .282 [7.16] COMMON CATHODE 18 .220 [5.59] .140 [3.56] 34X Ø.018 [0.46] ELEMENT 32 .400 [10.16] .600 [15.24] 17 .150 [3.81] .050 [1.27] PIN CONNECTIONS ELEMENT NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PIN NO. 34 2 33 3 32 4 31 5 30 6 29 7 28 8 27 9 26 ELEMENT NO. 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 CATHODE CATHODE PIN NO. 10 25 11 24 12 23 13 22 14 21 15 20 16 19 17 1 18 .050 [1.27] .100 [2.54] TYP CHIP DIMENSIONS INCH [mm] .025 [0.64] .040 [1.02] PITCH CHIP DIMENSIONS INCH [mm] .103 [2.62] 32X .065 [1.65] ACTIVE AREA TO-46 PACKAGE PCB PACKAGE 31X .005 [0.13] GAP 32X .035 [0.89] ACTIVE AREA FEATURES • Blue enhanced • Uniform outputs ± 5% • Low crosstalk ± 2% DESCRIPTION The PDB-C232 is a blue enhanced 32 element linear array silicon photodiode packaged in a PCB with a terminal strip and flat glass window. APPLICATIONS • Spectrometers • Baggage scanners • Characters recognition ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 50 +100 +75 +240 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS H = 100 fc, 2850 K VR = 5V VR = 10 mV VR =10 V, f = 1 MHz Spot Scan I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 7.5 100 350 30 TYP 11 1 250 30 75 1x10-14 190 13 MAX 10 UNITS µA nA MΩ pF nm V W/ √ Hz nS 1100 **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com