PDB-C601-1

Solderable Silicon Photodiodes PDB-C601-1 PACKAGE DIMENSIONS[mm] [mm] CHIP DIMENSIONS INCH INCH .030 [0.76] .021 [0.53] .014 [0.36] .040 [1.02] .125 [3.18] .074 [1.88] ACTIVE AREA CHIP DIMENSIONS INCH [mm] .022 [0.56] ACTIVE AREA SOLDERABLE PHOTODIODE BARE SHIP PACKAGE FEATURES DESCRIPTION • • • • APPLICATIONS Optical encoder Position sensor Industrial controls Instrumentation • Red enhanced The PDB-C601-1 is a silicon red enhanced • Photocondutctive solderable photodiode designed for low capacitance • High quantum efficiency and high speed for photoconductive applications. ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 75 +125 +100 +224 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time TEST CONDITIONS H = 100 fc, 2850 K VR = 5 V VR = 10 mV VR = 5 V, f = 1 MHz Spot Scan I = 10 μA VR = 0V @ l=Peak RL = 1KΩ,VR = 5V MIN 15 60 350 25 TYP 17 0.5 150 10 50 1x10-14 10 MAX 2 UNITS μA nA MW pF nm V W/ √ Hz nS 1100 **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com