PDB-C605-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C605 Photovoltaic Type PDB-V605 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.206 [5.22] 0.206 [5.22] 0.206 [5.22] 1.00 [25.4] 1.250 [31.75] 0.028 [0.71] 0.106 [2.68] 0.106 [2.68] 0.106 [2.68] ANODE, BUSS WIRE ANODE, RED WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] BARE CHIP 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 34 GAGE BUSS WIRE PDB-C605-2 PDB-V605-2 PDB-C605-3 PDB-V605-3 2 -40 +125 -40 +125 Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG TO Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C =1 1200 V O QE 0.4 1000 25 0.5 1100 75 0.6 800 UNITS MAX 900 Reverse Voltage MIN 600 V BR MAX SPECTRAL RESPONSE 0.7 700 MIN Optical encoder Position sensor Industrial controls Instrumentation 400 PARAMETER PDB-C605 PDB-V605 RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V605 cell is designed for low noise, photovoltaic applications. The PDB-C605 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 190 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 300 FEATURES 500 ACTIVE AREA = 10.84mm PDB-C605-1 PDB-V605-1 I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C605 PDB-V605 MIN TYP MAX MIN TYP MAX 115 130 10 10 100 25 20 15 -8 75 350 50 5 x 10 -13 20 50 nA 40 MΩ -8 % / oC 1400 1100 350 940 25 mA 125 25 UNITS 5 TYP pF 1100 nm 940 nm 15 V 8 x 10 -14 750 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C605-V605 REV B]