PDB-C613-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C613 Photovoltaic Type PDB-V613 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.393 [9.98] SQ 0.393 [9.98] SQ 0.393 [9.98] SQ 6.25 [158.7] 1.00 [25.4] 0.035 [0.89] ANODE, RED WIRE CATHODE, BLACK WIRE BARE CHIP 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE ACTIVE AREA = 86.4 mm2 PDB-C613-1 PDB-V613-1 PDB-C613-2 PDB-V613-2 PDB-C613-3 PDB-V613-3 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) -40 +125 -40 +125 TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C 0.4 =1 1100 V O QE 900 25 0.5 1000 75 0.6 800 UNITS MAX 700 Reverse Voltage MIN 600 V BR MAX SPECTRAL RESPONSE 0.7 500 MIN Optical encoder Position sensor Industrial controls Instrumentation 400 PARAMETER PDB-C613 PDB-V613 RESPONSIVITY (A/W) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V613 cell is designed for low noise, photovoltaic applications. The PDB-C613 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 0.016 [0.41] 0.014 [0.36] 190 FEATURES 0.016 [0.41] 0.014 [0.36] 1200 0.016 [0.41] 0.014 [0.36] ANODE, BUSS WIRE I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C613 PDB-V613 MIN TYP MAX MIN TYP MAX .90 1.0 90 .5 .90 180 1 1 350 50 3.0 x 10 -13 50 100 2 MΩ % / oC 350 5 TYP nA -8 10000 1100 940 25 mA 50 -8 350 1.0 UNITS pF 1100 nm 940 nm 15 V 3.0 x 10 -13 3000 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C613-V613 REV A]