PDB-C614-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C614 Photovoltaic Type PDB-V614 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.788 [20.02] 0.788 [20.02] 0.788 [20.02] 6.25 [158.7] 1.00 [25.4] 0.035 [0.89] 0.400 [10.16] 0.400 [10.16] 0.400 [10.16] ANODE, BUSS WIRE ANODE, RED WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] BARE CHIP 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE PDB-C614-2 PDB-V614-2 PDB-C614-3 PDB-V614-3 ACTIVE AREA = 177.9 mm2 Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TO Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C % 1200 -40 +125 -40 +125 TSTG 00 1100 V O =1 QE 0.4 900 25 0.5 1000 75 0.6 800 UNITS MAX 700 Reverse Voltage MIN 600 V BR MAX 0.7 400 MIN RESPONSIVITY (A/W) PARAMETER PDB-C614 PDB-V614 Optical encoder Position sensor Industrial controls Instrumentation SPECTRAL RESONSE ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V614 cell is designed for low noise, photovoltaic applications. The PDB-C614 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency 190 FEATURES 500 PDB-C614-1 PDB-V614-1 I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C614 PDB-V614 MIN TYP MAX MIN TYP MAX 1.89 2.10 250 .25 500 .5 1.89 2.10 mA 100 500 nA 750 50 1.4 x 10 -12 125 MΩ % / oC 21000 1100 350 940 25 1 -8 .5 -8 350 5 TYP UNITS pF 1100 nm 940 nm 15 V 2 x 10 -13 TYP 6500 W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C614-V614REV A]