PDB-C615-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C615 Photovoltaic Type PDB-V615 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 1.000 [25.40] 1.000 [25.40] 1.000 [25.40] 6.25 [158.7] 1.00 [25.4] 0.025 [0.64] 0.400 [10.16] 0.400 [10.16] 0.400 [10.16] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE 25 V -40 +125 -40 +125 O TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C QE 0.4 =1 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C 0.5 1200 75 0.6 1000 UNITS MAX 1100 Reverse Voltage MIN 800 V BR MAX SPECTRAL RESPONSE 900 MIN 0.7 Optical encoder Position sensor Industrial controls Instrumentation 400 PARAMETER PDB-C615 PDB-V615 RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V615 cell is designed for low noise, photovoltaic applications. The PDB-C615 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 190 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency PDB-C615-3 PDB-V615-3 300 FEATURES PDB-C615-2 PDB-V615-2 600 ACTIVE AREA =232.7 mm2 PDB-C615-1 PDB-V615-1 30 GAGE BUSS WIRE 700 BARE CHIP 0.016 [0.41] 0.014 [0.36] 500 0.016 [0.41] 0.014 [0.36] I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C615 PDB-V615 MIN TYP MAX MIN TYP MAX 2.5 2.8 350 .1 2.5 700 .25 .2 775 50 3.0 x 10 -12 150 700 .5 MΩ % / oC 350 5 TYP nA -8 25800 1100 940 25 mA 350 -8 350 2.8 UNITS pF 1100 nm 940 nm 15 V 5.0 x 10 -13 7000 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C615-V615 REV A]