PDB-V603-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C603 Photovoltaic Type PDB-V603 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.097 [2.46] 0.097 [2.46] 1.250 [6.35] 1.00 [25.4] 0.097 [2.46] 0.015 [0.38] 0.057 [1.45] 0.057 [1.45] 0.057 [1.45] ANODE, RED WIRE ANODE, BU SS W IRE 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] 0.016 [0.41] 0.014 [0.36] CATHO DE, BLAC K W IRE BARE CHIP PDB-C603-3 PDB-V603-3 ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) -40 +125 -40 +125 Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 TSTG TO Storage Temperature ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC TEST CONDITIONS Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage N EP tr C C 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) ISC RSH C =1 1200 V O QE 0.4 1100 25 0.5 900 75 0.6 1000 UNITS MAX 800 Reverse Voltage MIN 700 V BR MAX SPECTRAL RESPONSE 0.7 600 MIN Optical encoder Position sensor Industrial controls Instrumentation 400 PARAMETER PDB-C603 PDB-V603 RESPONSIVITY (A/W) SYMBOL APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V603 cell is designed for low noise, photovoltaic applications. The PDB-C603 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency PDB-C603-2 PDB-V603-2 190 FEATURES 34 GAGE BUSS WIRE 500 ACTIVE AREA = 2.55 mm PDB-C603-1 PDB-V603-1 30 GAGE P.V.C. WIRE 2 I = 10 mA Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C603 PDB-V603 MIN TYP MAX MIN TYP MAX 28 32 3 18 25 5 40 30 -8 25 350 50 -13 3 x 10 12 10 MΩ -8 % / oC 350 5 TYP nA 60 350 1100 940 25 mA 30 5 UNITS pF 1100 nm 940 nm 15 V -14 4 x 2 TYP 400 W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C603-V603 REV A]