PDB-V616-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C616 Photovoltaic Type PDB-V616 DETECTORS INC. INDUSTRY EQUIVALENTS S-50CL & S50VL PACKAGE DIMENSIONS INCH (mm) 0.810 [20.57] 0.810 [20.57] 6.25 [158.7] 0.019 [0.48] 0.130 [3.30] 0.810 [20.57] 1.00 [25.4] 0.130 [3.30] 0.130 [3.30] ANODE, RED WIRE ANODE, BUSS WIRE CATHODE, BLACK WIRE 0.016 [0.41] 0.014 [0.36] 30 GAGE P.V.C. WIRE PDB-C616-2 PDB-V616-2 Low cost blue enhanced planar diffused silicon solderable photodiode. The PDB-V616 cell is designed for low noise, photovoltaic applications. The PDB-C616 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. 25 V O TO Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 ELECTRO-OPTICAL CHARACTERISTICS SYMBOL CHARACTERISTIC ISC Short Circuit Current ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, VR = 10 mV TC RSH RSH Temp. Coefficient H = 0, VR = 10 mV CJ Junction Capacitance H = 0, VR = 5 V** H = 100 fc, 2850 K Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage I = 10 mA N EP Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** tr C C QE 0.4 =1 00 % 0.3 0.2 0.1 0 mA WAVELENGTH (nm) (TA=25OC unless otherwise noted) TEST CONDITIONS λrange C 0.5 1200 75 -40 +125 -40 +125 0.6 1100 Storage Temperature UNITS MAX 900 Reverse Voltage MIN 1000 V BR TSTG MAX 800 MIN SPECTRAL RESPONSE 400 PDB-C616 PDB-V616 0.7 300 PARAMETER RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) Optical encoder Position sensor Industrial controls Instrumentation 190 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency RSH APPLICATIONS DESCRIPTION: FEATURES SYMBOL PDB-C616-3 PDB-V616-3 700 ACTIVE AREA =51.61 mm2 PDB-C616-1 PDB-V616-1 30 GAGE BUSS WIRE 500 BARE CHIP 0.016 [0.41] 0.014 [0.36] 600 0.016 [0.41] 0.014 [0.36] PDB-C616 PDB-V616 MIN TYP MAX MIN TYP MAX 700 560 725 100 200 1 35 mA 75 nA 10 MΩ -8 -8 % / oC 300 6000 pF 2 350 5 1100 350 940 25 650 UNITS 50 1100 940 5 15 7.0 x 10-12 TYP 2.0 x 10-13 TYP 36 1800 nm nm V W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C616-V616 REV N/C]