PDB-V617-1

PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C617 Photovoltaic Type PDB-V617 DETECTORS INC. PACKAGE DIMENSIONS INCH (mm) 0.600 [15.24] 0.600 [15.24] 0.200 [5.08] 0.200 [5.08] 0.600 [15.24] 6.25 [158.7] 1.00 [25.4] 0.200 [5.08] 0.024 [0.61] ANODE, RED WIRE 0.016 [0.41] 0.014 [0.36] ANODE, BUSS WIRE CATHODE, BLACK WIRE BARE CHIP ACTIVE AREA =62.91 mm2 PDB-C617-1 PDB-V617-1 30 GAGE P.V.C. WIRE 30 GAGE BUSS WIRE PDB-C617-2 PDB-V617-2 PDB-C617-3 PDB-V617-3 3.25 [82.6] 6.25 [158.7] 1.00 [25.4] ANODE, RED WIRE ANODE, RED WIRE CATHODE, BLACK WIRE 30 GAGE P.V.C. WIRE PDB-C617-5 PDB-V617-5 Optical encoder Position sensor Industrial controls Instrumentation silicon solderable photodiode. The PDB-V617 cell is designed for low noise, photovoltaic applications. The PDB-C617 cell is designed for low capacitance, high speed, photoconductive operation. They are available bare, PVC or buss wire leads. V -40 +125 -40 +125 O C Operating Temperature Range -40 +100 -40 +100 O TS Soldering Temperature +224 +224 O IL Light Current 500 500 C C 0.3 0.2 0.1 0 mA WAVELENGTH (nm) 1200 25 % 00 =1 E Q 0.4 1100 75 0.5 900 MAX 1000 Storage Temperature MIN 800 TSTG MAX 0.6 500 Reverse Voltage MIN UNITS SPECTRAL RESPONSE 400 V BR PDB-C617 PDB-V617 0.7 190 PARAMETER RESPONSIVITY (A/W) ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) 300 Blue enhanced Photovoltaic type Photoconductive type High quantum efficiency TO APPLICATIONS DESCRIPTION: Low cost blue enhanced planar diffused FEATURES SYMBOL 30 GAGE P.V.C. WIRE PDB-C617-6 PDB-V617-6 700 30 GAGE BUSS WIRE PDB-C617-4 PDB-V617-4 CATHODE, BLACK WIRE 600 ANODE, BUSS WIRE CATHODE, BUSS WIRE ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS ISC Short Circuit Current H = 100 fc, 2850 K ID Dark Current H = 0, VR = 5 V* Shunt Resistance H = 0, V R = 10 mV TC RSH RSH Temp. Coefficient H = 0, V R = 10 mV CJ Junction Capacitance H = 0, V R = 5 V** RSH λrange Spectral Application Range Spot Scan λp Spectral Response - Peak Spot Scan V BR Breakdown Voltage NEP tr I = 10 m A Noise Equivalent Power VR = 0 V @ Peak Response Time RL = 1 KΩ VR = 5 V** PDB-C617 PDB-V617 MIN TYP MAX MIN TYP MAX 625 650 65 4.5 615 135 75 nA 13.5 MΩ -8 -8 % / oC 285 8500 pF 9 350 6.5 1100 350 940 25 mA 640 35 UNITS 50 -13 7.0 x 10 40 5 TYP 1100 nm 940 nm 15 V -13 2.16 x 10 2500 TYP W/ Hz nS *VR = 100 mV on Photovoltaic type **VR = 0 V on Photovoltaic type Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. [FORM NO. 100-PDB-C617-V617 REV B]