PDI-E813

GaAlAs High power IR LED Emitters PDI-E813 PACKAGE DIMENSIONS INCH [mm] .045 [1.1] .030 [0.8] C L 45° Ø.188 [4.8] C L Ø.180 [4.6] .047 [1.2] .035 [0.9] .257 [6.5] .223 [5.7] WINDOW CAP (WELDED) .015 [0.38] MAX HEADER Ø.019 [0.5] TYP C L CATHODE .100 [2.54] C L ANODE & CASE Ø.215 [5.5] Ø.207 [5.3] 880 nm LED CHIP .019 [0.48] .028 [0.7] MAX 2X 1.000 [25.4] .214 [5.4] .192 [4.9] CATHODE TO-46 CAN PACKAGE CHIP DIMENSIONS INCH [mm] FEATURES • High output power • High reliability • Medium emission angle DESCRIPTION The PDI-E813 is a high power GaAlAs infrared emitter, packaged in a hermetic TO-46 metal header with a dome window glass. APPLICATIONS • Photoelectric switches • Infrared sources • Optical readers ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER Pd If Ip Vr TSTG TO TS Power Dissipation Continuous Forward Current Peak Forward Current Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -55 MIN MAX 360 180 3.0 3 +125 +125 +240 UNITS mW mA A V °C °C °C * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Po Vf Ir lp CHARACTERISTIC Output Power Forward Voltage Reverse current Peak Wavelength Spectral Halfwidth Dynamic Resistance Rise Time Fall Time TEST CONDITIONS If = 100 mA If = 100 mA Vr = -3V If = 50 mA If = 50 mA If = 100mA If = 20 mA If = 20 mA MIN 7.0 TYP 15 1.5 880 80 1.2 0.6 0.5 MAX 1.9 10 895 UNITS mW V uA nm nm Ohms uS uS 865 Δl Rd tr tf Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com