PDU-G102B

UV Enhanced GaN Detectors Advanced Photonix, Inc. PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] CATHODE VIEWING ANGLE Ø .118 [3.00] 61° ANODE .100 [2.54] Ø.181 [4.60] CHIP .087 [2.21] .500 [12.70] CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ .0134 [0.340] TO-46 PACKAGE .0126 [0.320] ACTIVE AREA = 0.076 mm ² FEATURES • • • • 320nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance DESCRIPTION The PDU-G102B is a GaN UV photodiode with a spectral range from 200nm to 320nm and is ideal for UVB sensing applications available in a TO-46 can package. 1.000 APPLICATIONS • • • • UVB power meters Sun dosimeters UV epoxy curing UV instrumentation ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -30 MIN MAX 5 +90 +85 +260 UNITS Responsivity (A/W) SPECTRAL RESPONSE V °C °C °C 0.100 0.010 0.001 * 1/16 inch from case for 3 seconds max. 0 .000 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 Wavelength (nm ) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Response Time TEST CONDITIONS UVI = 1 VR = 1V VR = 10 mV VR = 0V, f = 1 MHz Spot Scan l= 350nm V, VR = 0 V I = 1 μA RL = 1KΩ,VR = 1V MIN TYP 1 0.05 1 24 0.10 10 10 MAX 1 UNITS nA nA GW pF nm A/W V nS 0.45 200 320 15 © 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice. Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 4/19/07