PDV-P9004

CdS Photoconductive Photocells PDV-P9004 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] +.015 [0.38] -.010 [0.25] .079 [2.00] ±.010 [0.25] .138 [3.50] EPOXY ON LEADS 3 mm MAX 2X Ø.016 [0.40] .100 [2.54] ±.010 [0.25] Ø.165 [4.19] PLASTIC COATED 2X 1.023 [26.0] CERAMIC PACKAGE FEATURES • Visible light response • Sintered construction • Low cost DESCRIPTION APPLICATIONS The PDV-P9004 are (CdS), Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls nm. These light dependent resistors are available in • Night light Controls a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCE VS. ILLUMINANCE 1000 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Vpk Pd Δpo/Δt TO TS PARAMETER Applied Voltage Continuous Power Dissipation Operating and Storage Temperature Soldering Temperature* -30 MIN MAX 150 90 +75 +260 UNITS V mW/°C °C °C R esistance in Kohms 100 10 1 * 0.200 inch from base for 3 seconds with heat sink. 1 10 Illuminance in lux 100 ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL RD RI S lrange lpeak tr Tf CHARACTERISTIC Dark Resistance Illuminated Resistance TEST CONDITIONS MIN 2 27 0.85 400 520 60 25 700 TYP MAX 60 After 10 sec. @ 10 Lux @ 2856 °K 10 Lux @ 2856 °K LOG(R100)-LOG(R10)** Sensitivity LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K UNITS MW KW W/Lux nm nm ms ms **R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06