SD008-11-41-211

InGaAs Photodetectors SD 008-11-41-211 PACKAGE DIMENSIONS INCH [mm] 0.210 [5.33] 0.165 [4.19] 0.059 [1.50] 3X 0.019 [0.48] 0.184 [4.67] 88° CHIP 0.145 [3.69] 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 0.016 [0.40] 1 ANODE 2 CASE GROUND 3 CATHODE SCHEMATIC 0.016 [0.40] TO-46 PACKAGE .0079 [.200] ACTIVE AREA FEATURES • Low noise • Low dark current • High response DESCRIPTION The SD 008-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package. APPLICATIONS • Communication • Industrial • Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 75 +100 +85 +260 UNITS Responsivity (A/W) 1.2 1 0.8 0.6 0.4 0.2 0 800 SPECTRAL RESPONSE V °C °C °C * 1/16 inch from case for 3 seconds max. 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nM) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 5V VR = 10 mV VR = 5V, f = 1 MHz Spot Scan l= 1310nm, VR = 5V I=1 A VR = 5V @ l=1310nm RL = 50 ,VR = 5V MIN 100 800 0.83 TYP 1 300 9 0.92 10 1.79X10-14 0.23 MAX 5.0 10 1700 UNITS nA MW pF nm A/W V W/ Hz nS **Response time of 10% to 90% is specified at 1310nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 7/31/06