SD012-151-011

InGaAs Photodetector PRELIMINARY Advanced Photonix, Inc. SD012-151-011 Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM DESCRIPTION FEATURES The SD 012-151-011 is a high sensitivity, low noise, 0.3 mm diameter active area InGaAs photodiode (chip dimensions 0.44mm x 0.44mm) for detection at SWIR, NIR wavelengths for imaging and sensing applications. The photodetector is assembled in a TO-46 package.  Low Noise,  High Sensitivity  Detection at SWIR and NIR RELIABILITY This API high-reliability detector is in principle able to meet military test requirements (Mil-STD-750, Mil-STD-883) after proper screening and group test. Contact API for recommendations on specific test conditions and procedures. APPLICATIONS Industrial Sensing Security and Defense Communication Medical Ta = 23°C non condensing 1/16 inch from case for 3 seconds max ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature -40 -55 - 40 +100 +125 +260 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.     UNITS V °C °C °C REV11-26-14 Page 1/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 InGaAs Photodetector PRELIMINARY Advanced Photonix, Inc. Precision – Control – Results WWW.ADVANCEDPHOTONIX.COM ELECTRO-OPTICAL CHARACTERISTICS RATINGS TEST CONDITIONS PARAMETER Breakdown Voltage Responsivity Shunt Resistance Dark Current Capacitance Rise Time (50 load) Spectral Range Noise Equivalent Power SD012-151-011 Ta = 23°C unless noted otherwise MIN Ibias = 1 A = 1310 nm,Vr=5V Vbias = 10 mV Vbias = 5V Vbias = 5V; f = 1.0 MHz Vbias = 5V; = 1310 nm Vr= 5V@ =1310 TYP 0.80 0.2 800 - MAX 50 0.90 1.0 0.1 2.0 1.2 -15 4.0x10 UNITS 10.0 10.0 1700 - V A/W G nA pF ns nm 1/2 W/Hz TYPICAL PERFORMANCE NOISE CURRENT vs. REVERSE BIAS DARK CURRENT vs. REVERSE BIAS 1.E-12 1.E-04 1.E-05 Reverse Dark Current [A] Noise Current (A/rt_Hz) 1.E-06 1.E-13 1.E-14 Reverse dark current @ 23 C 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1.E-15 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-13 1.E-03 1.E+02 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 Reverse Voltage [V] Reverse Voltage (V) SPECTRAL RESPONSE CAPACITANSE vs. REVERSE BIAS 0.85 21 0.75 19 0.65 17 Capacitance [pF] Responsivity,A/W 0.95 0.55 0.45 0.35 15 13 11 9 0.25 7 0.15 5 0.05 680 880 1080 1280 1480 0 1680 5 10 Reverse Bias [V] 15 20 Wavelenght, nm Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV11-26-14 Page 2/2 © 2014 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935