SD036-70-62-531

Small Area Silicon Avalanche Photodiode SD 036-70-62-531 PACKAGE DIMENSIONS INCH / mm TO-5 PACKAGE CHIP DIMENSIONS INCH [mm] FEATURES • • • • Low noise Small size High Speed Low cost DESCRIPTION The SD 036-70-62-531 is a 0.9 mm diameter small area silicon avalanche photodiode (APD) that provides high gain and low noise, packaged in a hermetic TO-5 metal can with a flat window. 80 70 Responsivity (A/W) APPLICATIONS • Military • Industrial • Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* MIN 130 -40 -40 MAX 280 +85 +55 +240 UNITS V °C °C °C 60 50 40 30 20 10 0 400 450 SPECTRAL RESPONSE 80 70 60 50 40 30 R 500 550 600 650 700 750 800 850 QE 1000 1050 1100 900 950 20 10 0 * 1/16 inch from case for 3 seconds max. Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop tr CHARACTERISTIC TEST CONDITIONS MIN TYP 7 0.12 400 30 47 130 RL = 50 Ω, l= 675nm 2 280 1100 MAX 30 10 UNITS nA pF pA/√Hz nm A/W V nS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 660nm, VR = 0 V Responsivity l= 830nm, VR = 0 V Operating voltage Response Time** **Response time of 10% to 90% is specified at 820nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE ELECTRO-OPTICAL CHARACTERISTICS RATING SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com