SD057-14-21-011

SD057-14-21-011

  • 厂商:

    ADVANCEDPHOTONIX(先进光子)

  • 封装:

  • 描述:

    SD057-14-21-011 - Red Enhanced High Performance Silicon Photodiode - Advanced Photonix, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
SD057-14-21-011 数据手册
Red Enhanced High Performance Silicon Photodiode SD 057-14-21-011 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] Ø .215 [5.46] Ø .210 [5.33] 45° .160 [4.06] .145 [3.68] .057 [1.44] ANODE 2X Ø.018 [0.46] Ø .156 [3.96] Ø .152 [3.86] 51° VIEWING Ø.187 [4.75] ANGLE Ø.181 [4.60] CATHODE .100 [2.54] 2X .500 [12.7] MIN CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .060 [1.52] SQUARE TO-46 PACKAGE .051 [1.30] SQUARE ACTIVE AREA TO-46 PACKAGE FEATURES • • • • Low noise Red enhanced High shunt resistance High response DESCRIPTION The SD 057-14-21-011 is a high performance silicon PIN photodiode, red enhanced, packaged in a leaded hermetic TO-46 metal package. APPLICATIONS • Instrumentation • Industrial • Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL VBR TSTG TO TS PARAMETER Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 MIN MAX 75 +150 +125 +240 UNITS Responsivity (A/W) 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 SPECTRAL RESPONSE V °C °C °C 1000 1050 1100 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 5V VR = 10 mV VR = 0V, f = 1 MHz VR = 5V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 μA VR = 5V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 1600 28 9 350 0.32 0.50 1100 0.36 0.55 50 1.0X10-14 190 13 TYP 0.1 MAX 0.5 UNITS nA MW pF nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 * 1/16 inch from case for 3 seconds max.
SD057-14-21-011
1. 物料型号: - 型号:SD 057-14-21-011 - 制造商:Advanced Photonix Inc.

2. 器件简介: - 描述:SD 057-14-21-011是一款高性能硅PIN光电二极管,红色增强型,采用有铅密封TO-46金属封装。

3. 引脚分配: - 阳极:2X 0.018英寸(0.46毫米) - 阴极:0.100英寸(2.54毫米)

4. 参数特性: - 绝对最大额定值: - 反向电压(VBR):75V - 存储温度(TSTG):-55°C至+150°C - 工作温度(To):-40°C至+125°C - 焊接温度(Ts):+240°C(1/16英寸距离,最长3秒) - 电光特性: - 暗电流(Io):在5V下,0.1至0.5纳安 - 并联电阻(RsH):在10毫伏下,1600兆欧 - 结电容(CJ):在0V下,1MHz时28皮法;在5V下,1MHz时9皮法 - 光谱应用范围(λrange):350至1100纳米 - 响应度(R):在633纳米下0.32至0.36安/瓦;在900纳米下0.50至0.55安/瓦 - 击穿电压(VBR):50V - 噪声等效功率(NEP):在5V下,950纳米下1.0×10^-14瓦/赫兹 - 响应时间(t,):在50欧姆下,0V时190纳秒;在10V时13纳秒

5. 功能详解: - 该光电二极管具有低噪声、高并联电阻和高响应度的特点。

6. 应用信息: - 应用领域包括仪器、工业和医疗。

7. 封装信息: - 封装类型:TO-46 - 封装尺寸:0.215英寸(5.46毫米)×0.210英寸(5.33毫米) - 芯片尺寸:0.060英寸(1.52毫米)正方形
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