96SD3-2G1600NN-AP

ADVANTECH DRAM Memory Module Portfolio Introduction PAPS Product Management Q1 / 2016 PART I. ADVANTECH QUALIFIED DIMM (AQD) ADVANTECH QUALIFIED DIMM Built to Last --The toughest memory module for rigorous applications Advantech Confidential Q1/2016 -3- & Internal Use Only SELLING PROPOSITION QUALITY Advantech Confidential Q1/2016 -4- & Internal Use Only RELIABILITY COMPATIBILITY LONGEVITY LIFE-TIME WARRANTY Quality Assurance Advantech Confidential - 5 - & Internal Use Only Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Quality Assurance 100% Module On Board Testing Advantech Confidential - 6 - & Internal Use Only Rigorous Reliability Tests Cross-Checked Compatibility Shock & Vibration Test Longevity Chamber Test Life-Time Warranty Functional Test Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Check & Compare Both Teams Cross Compare Testing Results to Ensure M/B & Memory Compatibility Memory Compatibility Testing Result Motherboard Team DOA Testing Result Advantech Confidential - 7 - & Internal Use Only Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty  Locked BOM - IC Spec - PCB Layout Minimum 3 Years Longevity Advantech Confidential - 8 - & Internal Use Only Quality Assurance Rigorous Reliability Tests Cross-Checked Compatibility Longevity Life-Time Warranty Every ADVATECH QUALIFIED DIMM (AQD) is back up by Lifetime Warranty Advantech Confidential Q1/2016 -9- & Internal Use Only Small Things Matter For better durability all AQD DRAM applies IPC-2221,using 30u Golden plated connector to ensure DRAM’s stability in any given circumstances. (Est. Running Change Q1 / 2015) Advantech Confidential - 10 - & Internal Use Only AQD Product Portfolio Unbuffered DIMM  DDR3: 1GB, 2GB, 4GB & 8GB  DDR4: 4GB, 8GB, 16GB(New) - General IPC Applications ECC Unbuffered DIMM  DDR3: 2GB, 4GB & 8GB  DDR4: 4GB, 8GB, 16GB(New) - Improve System Productivity & Efficiency Registered DIMM - Providing The Best Solution for Capacity and Performance Requirement Load Reduce DIMM - Providing the biggest capacity per server with the lowest energy costs Advantech Confidential Q1/2016 - 11 - & Internal Use Only  DDR3: 4GB, 8GB & 16GB  DDR4: 4GB, 8GB & 16GB  DDR3: 32GB Product Roadmap Q1 2016 Advantech Confidential Q1/2016 - 12 - & Internal Use Only AQD Naming Convention A Q D – S 3 TYPE PRODUCT NAME A=Advantech Q=Qualified D=DIMM D SD2=DDR2 SO-DIMM SD3=DDR3 SO-DIMM SD4= DDR4 SO-DIMM D2=DDR2 D3=DDR3 D4=DDR4 L 2 N G VOLTAGE CAPACITY Blank= 1.5V L=1.35V U=1.2V 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16 =16GB 32 =32GB 64= 64GB ADVNCED FEATURE V Height N= V= NON-ECC and NON REGISTER VLP R= REGISTER E= ECC ONLY L=Load reduce Color / Symbol Key Advantech Confidential Q1/2016 - 13 - & Internal Use Only 1 6 – S G SPEED FAB VERSION 40=400Mt/s 53=533Mt/s 66=667Mt/s 80=800Mt/s 10=1066Mt/s 13=1333Mt/s 16=1600Mt/s 18=1866Mt/s S=Samsu ng H=Hynix M=Micron /Elpida N=Nanya X=1Gb(128Mx8) T=1Gb(256Mx4) C=2Gb Q=2Gb(256Mx8) Y=2Gb(512Mx4) G=4Gb(512Mx8) Z=4Gb(1Gbx4) E=8Gb(1Gbx8) M=8Gb(2Gbx4) AQD DDR2 & DDR3 Memory Modules Portfolio  Unbuffered DIMM 800 1GB (128X8) 1333 1600 SHORT LONG SHORT Non-VLP Non-VLP Non-VLP AQD-SD21GN80-SX AQD-D31GN13-SX AQD-SD31GN13-SX LONG VLP 1GB (128X16) 2GB (256MX8) UDIMM AQD-D3L2GNV16-SQ (New) 4GB (256MX8) SHORT Non-VLP Non-VLP AQD-D31GN16-HC AQD-D3L1GN16-HC AQD-SD31GN16-HC AQD-SD3L1GN16-HC AQD-D3L2GN16-SQ AQD-D3L2GN16-HQ AQD-SD3L2GN16-SQ AQD-SD3L2GN16-HQ AQD-D3L4GN16-MQ AQD-D3L4GN16-SQ AQD-SD3L4GN16-MQ AQD-SD3L4GN16-SQ 4GB (512MX8) AQD-D3L4GNV16-SG (New) AQD-D3L4GN16-SG AQD-D3L4GN16-HG AQD-D3L4GN16-MG AQD-SD3L4GN16-SG AQD-SD3L4GN16-HG AQD-SD3L4GN16-MG 8GB (512MX8) AQD-D3L8GNV16-SG (New) AQD-D3L8GN16-SG AQD-D3L8GN16-HG AQD-D3L8GN16-MG AQD-SD3L8GN16-SG AQD-SD3L8GN16-HG AQD-SD3L8GN16-MG Advantech Confidential - 14 - & Internal Use Only AQD DDR3 Memory Modules Portfolio  ECC Unbuffered DIMM  Registered DIMM  Load Reduce DIMM 1333 ECC UDIMM R-DIMM LONG SHORT Non-VLP Non-VLP LONG VLP SHORT Non-VLP Non-VLP 2GB (256MX8) AQD-D3L2GE16-SQ 4GB (512MX8) AQD-D3L4GE16-SG AQD-SD3L4GE16-SG AQD-SD3L4GE16-MG 8GB (512MX8) AQD-D3L8GE16-SG AQD-SD3L8GE16-SG AQD-SD3L8GE16-MG 4GB (512MX8) AQD-D3L4GR16-SG 8GB (512MX8) AQD-D3L8GR13-SG 16GB (2Gbx4) LOAD REDUCE 1600 32GB (2GbX4) Advantech Confidential - 15 - & Internal Use Only AQD-D3L32L13-SM AQD-D38GRV16-SG AQD-D3L8GRV16-SG AQD-D3L8GR16-SG AQD-D316RV16-SM AQD-D3L16RV16-SM AQD-D3L16R16-SM U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM AQD-D31GN13-SX 1GB 240PIN, 1333Mt/s, 128Mx8, 1.181” Height, Samsung, 1.5V AQD-D31GN16-HC 240PIN, 1600Mt/s, 128Mx16, 1.181” Height, Hynix, 1.5V AQD-D3L1GN16-HC 240PIN, 1600Mt/s, 128Mx16, 1.181” Height, Hynix, 1.35V AQD-D3L2GN16-SQ 2GB 240PIN, 1600Mt/s, 256Mx8, 1.181” Height, Samsung Chips 1.35V AQD-D3L2GN16-HQ 240PIN, 1600Mt/s, 256Mx8, 1.181” Height, Hynix Chips 1.35V AQD-D3L2GNV16-SQ 240PIN, 1600Mt/s, 256Mx8, 0.74” Height, Samsung Chips 1.35V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 DIMM AQD-D3L4GN16-SG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Samsung Chips 1.35V AQD-D3L4GN16-HG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Hynix Chips 1.35V 4GB AQD-D3L4GN16-SQ 240PIN, 1600Mt/s, 256Mx8, 1.181” Height, Samsung 1.35V AQD-D3L4GN16-MG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Micron Chips 1.35V AQD-D3L4GN16-MQ 240PIN, 1600Mt/s, 256Mx8, 1.181” Height, Micron Chips 1.35V AQD-D3L4GNV16-SQ 240PIN, 1600Mt/s, 256Mx8, 0.74” Height, Samsung Chips 1.35V AQD-D3L8GN16-SG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Samsung Chips 1.35V 8GB AQD-D3L8GN16-HG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Hynix Chips 1.35V AQD-D3L8GN16-MG 240PIN, 1600Mt/s, 512Mx8, 1.181” Height, Micron Chips 1.35V AQD-D3L8GNV16-SQ 240PIN, 1600Mt/s, 256Mx8, 0.74” Height, Samsung Chips 1.35V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR3 SO-DIMM AQD-SD31GN13-SX 1GB 204PIN, 1333Mt/s, 128Mx8, 1.181” Height, Samsung Chips 1.5V AQD-SD31GN16-HC 204PIN, 1600Mt/s, 128Mx16 1.181” Height, Hynix Chips 1.5V AQD-SD3L1GN16-HC 204PIN, 1600Mt/s, 128Mx16 1.181” Height, Hynix Chips 1.35V 2GB AQD-SD3L2GN16-SQ 204PIN, 1600Mt/s, 256Mx8, 1.181” Height, Samsung Chips 1.35V AQD-SD3L2GN16-HQ 204PIN, 1600Mt/s, 256Mx8, 1.181” Height, Hynix, Chips 1.35V AQD-SD3L4GN16-SG 204PIN, 1600Mt/s, 512Mx8, 1.181” Height, Samsung Chips 1.35V AQD-SD3L4GN16-HG 4GB 204PIN, 1600s, 512Mx8, 1.181” Height, Hynix Chips 1.35V AQD-SD3L4GN16-MG 204PIN, 1600s, 512Mx8, 1.181” Height, Micron Chips 1.35V AQD-SD3L4GN16-SQ 204PIN, 1600s, 256Mx8, 1.181” Height, Samsung Chips 1.35V AQD-SD3L4GN16-MQ 204PIN, 1600s, 256Mx8, 1.181” Height, Micron Chips 1.35V AQD-SD3L8GN16-SG 8GB 204PIN, 1600Mt/s, 512Mx8, 1.181” Height, Samsung, Chips 1.35V AQD-SD3L8GN16-HG 204PIN, 1600Mt/s, 512Mx8, 1.181” Height, Hynix, Chips 1.35V AQD-SD3L8GN16-MG Q1/2016204PIN, 1600Mt/s, 512Mx8, 1.181” Height, Micron, Chips 1.35V Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 8GB 4GB 2GB DDR3 DIMM – Advanced Feature ECC AQD-D3L2GE16-SQ 240 PIN, 1600Mt/s, 256Mx8,1R 1.181” Height, Samsung, 1.35V AQD-D3L4GE16-SG 240 PIN, 1600Mt/s, 512 Mx8,1R 1.181” Height, Samsung, 1.35V AQD-D3L8GE16-SG 240PIN, 1600Mt/s, 512Mx8,2R 1.181” Height, Samsung, 1.35V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 2GB DDR3 SO-DIMM – Advanced Feature ECC AQD-SD3L2GE16-MG 240 PIN, 1600Mt/s, 256 Mx8, 1R 1.181” Height, Micron, 1.35V 4GB AQD-SD3L4GE16-SG 204 PIN, 1600Mt/s, 512 Mx8, 1R 1.181” Height, Samsung, 1.35V AQD-SD3L4GE16-MG 204 PIN, 1600Mt/s, 512 Mx8, 1R 1.181” Height, Micron, 1.35V 8GB AQD-SD3L8GE16-SG 204PIN, 1600Mt/s, 512Mx8, 2R 1.181” Height, Samsung, 1.35V AQD-SD3L8GE16-MG 204PIN, 1600Mt/s, 512Mx8, 2R 1.181” Height, Micron, 1.35V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 4GB DDR3 DIMM – Advanced Feature Registered AQD-D3L4GR16-SG 240PIN, 1600 Mt/s, 512 Mx8 1R, 1.18” Height, Samsung Chips 1.35V AQD-D3L8GR13-SG 240PIN, 1333 Mt/s, 512 Mx8 2R, 1.18” Height, Samsung Chips 1.35V 8GB AQD-D3L8GR16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, 1.18” Height, Samsung Chips 1.35V AQD-D38GRV16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, 1.18” Height, Samsung Chips 1.35V AQD-D3L8GRV16-SG 240PIN, 1600 Mt/s, 512 Mx8 2R, VLP 0.74” Height, Samsung Chips 1.35V AQD-D3L16R16-SM 16GB 240PIN, 1600 Mt/s, 1Gx4 2R, 0.74“ Height, Samsung, Chips 1.35V AQD-D316RV16-SM 240PIN, 1600 Mt/s, 2Gx4 2R, 0.74“ Height, Samsung, Chips 1.35V AQD-D3L16RV16-SM 240PIN, 1600 Mt/s, 2Gx4 2R, 0.74“ Height, Samsung, Chips 1.35V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 32GB DDR3 SO-DIMM – Advanced Feature Load Reduce AQD-D3L32L13-SM 240PIN, 1333 Mt/s, 2Gbx4 ,4R, 1.810“ Height, Samsung, Chips 1.5V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 DDR4 Roadmap DDR4 U-DIMM (Q2/2015) DDR4 ECC DIMM (Q2/2015) DDR4 R-DIMM (Q1/2015) DDR4 / 2133- 4266 2010 2006 2002 DDR2 / 400-800 DDR1 / 200-400 1999 SDRAM / 66-133 Q1/2016 DDR3 / 800-2133 2015 DDR4 Market Penetration 2015 (DDR3 v.s. DDR4) 100% 90% 80% 99% 83% 95% 99% 69% 86% 99% 54% 81% 98% 42% 72% 70% DDR4 DDR3 PC 60% DDR4 DDR3 Server DDR4 DDR3 TTL 50% 40% 30% DDR4 market share is growing 20% 10% 0% 17% 5% 1% Q1 Q1/2016 31% 14% 1% Q2 58% 46% 19% 1% Q3 28% 2% Q4 AQD DDR4 Memory Modules Portfolio 2133 LONG SHORT Non-VLP Non-VLP 4GB (512Mx8) AQD-D4U4GN21-SG AQD-SD4U4GN21-SG 8GB (512Mx8) AQD-D4U8GN21-SG AQD-SD4U8GN21-SG 16GB (1Gbx8) AQD-D4U16N21-SE (New) AQD-SD4U16N21-SE (New) 4GB (512Mx8) AQD-D4U4GE21-SG AQD-SD4U4GE21-SG 8GB (512Mx8) AQD-D4U8GE21-SG AQD-SD4U8GE21-SG 16GB (1Gbx8) AQD-D4U16E21-SE (New) AQD-SD4U16E21-SE (New) 4GB (512Mx8) AQD-D4U4GR21-HG AQD-D4U4GR21-SG (Coming Soon) VLP U-DIMM ECC UDIMM 8GB (512Mx8) R-DIMM AQD-D4U8GRV21-SG (New) AQD-D4U8GR21-SG (Coming Soon) 8GB (1Gbx4) AQD-D4U8GR21-HZ 16GB (1Gbx4) AQD-D4U16R21-HZ 16GB (1Gbx8) AQD-D4U16R21-SE (New) 16GB (2Gbx4) Advantech Confidential - 25 - & Internal Use Only AQD-D4U16RV21-SM (New) U-DIMM ECC U-DIMM R-DIMM Load Reduce 4GB AQD-D4U4GN21-SG 8GB AQD-D4U8GN21-SG 16GB DDR4 DIMM AQD-D4U16N21-SE 288PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Samsung Chips 1.2V 288PIN, 2133Mt/s, 512Mx8, 31.24mm/1.23” Height, Samsung Chips 1.2V 288PIN, 2133Mt/s, 1Gbx8, 31.24mm/1.23” Height, Samsung Chips 1.2V 4GB AQD-SD4U4GN21-SG 8GB AQD-SD4U8GN21-SG 16GB DDR4 SO-DIMM AQD-SD4U16N21-SE 260PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Samsung Chips 1.2V 260PIN, 2133Mt/s, 512Mx8, 31.24mm/1.23” Height, Samsung Chips 1.2V 260PIN, 2133Mt/s, 1Gbx8, 31.24mm/1.23” Height, Samsung Chips 1.2V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 4GB AQD-D4U4GN21-HG 8GB DDR4 DIMM AQD-D4U8GN21-HG 288PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Hynix Chips 1.2V 288PIN, 2133Mt/s, 512Mx8, 31.24mm/1.23” Height, Hynix Chips 1.2V 4GB AQD-SD4U4GN21-HG 8GB DDR4 SO-DIMM AQD-SD4U8GN21-HG 260PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Hynix Chips 1.2V 260PIN, 2133Mt/s, 512Mx8, 31.24mm/1.23” Height, Hynix Chips 1.2V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce 4GB DDR4 DIMM – Advanced Feature ECC AQD-D4U4GE21-SG 8GB AQD-D4U8GE21-SG 16GB 288PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Samsung Chips 1.2V AQD-D4U16GE21-SE 288PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Samsung Chips 1.2V 288PIN, 2133Mt/s, 1Gbx8, 31.25mm/1.23” Height, Samsung Chips 1.2V 4GB AQD-SD4U4GE21-SG 8GB AQD-SD4U8GE21-SG 16GB DDR4 SO-DIMM – Advanced Feature ECC AQD-SD4U16GE21-SE 260PIN, 2133Mt/s, 512Mx8 31.25mm/1.23” Height, Samsung Chips 1.2V 260PIN, 2133Mt/s, 512Mx8, 2R 21.25MM/1.23”” Height, Samsung Chip 1.2V 260PIN, 2133Mt/s, 1Gbx8, 2R 21.25MM/1.23”” Height, Samsung Chip 1.2V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 U-DIMM ECC U-DIMM R-DIMM Load Reduce DDR4 DIMM – Advanced Feature Registered 4GB AQD-D4U4GR21-HG 288PIN, 2133 Mt/s, 512 Mx8 1R, 1.23” Height, Hynix Chips 1.2V AQD-D4U4GR21-SG 288PIN, 2133 Mt/s, 512 Mx8 1R, 1.23” Height, Samsung Chips 1.2V 8GB AQD-D4U8GR21-HZ 288PIN, 2133 Mt/s, 1Gbx4 1R, 1.23” Height, Hynix Chips 1.2V AQD-D4U8GR21-SG 288PIN, 2133 Mt/s, 512 Mx8 2R, 1.23” Height, Samsung Chips 1.2V AQD-D4U8GRV21-SG 288PIN, 2133 Mt/s, 2Gbx4 2R, 0.74” Height, Samsung Chips 1.2V AQD-D4U16R21-HZ 16GB 288PIN, 2133 Mt/s, 1Gbx4 2R, 1.23“ Height, Hynix Chips 1.2V AQD-D4U16R21-SE 288PIN, 2133 Mt/s, 1Gbx4 2R, 1.23“ Height, Samsung Chips 1.2V AQD-D4U16RV21-SM 288PIN, 2133 Mt/s, 2Gbx4 2R, 0.74” Height, Samsung Chips 1.2V Q1/2016 Q1/2016 Q2/2016 Q3/2016 Q4/2016 Advantech Confidential Q1/2016 - 30 - & Internal Use Only 96 DRAM Naming Convention 9 6 D M M Memory Type – DR1=DDR DR1I=INDUSTRIAL GRADE DDR1 D2=DDR2 D2I=INDUSTRIAL GRADE DDR2 D3=DDR3 SS=SDRAM SO-DIMM SD=DDR SO-DIMM SDI=INDUSTRIAL GRADE SO-DDR SD2=DDR2 SO-DIMM SD2I=INDUSRIAL GRADE SO-DDR2 SD3=DDR3 SO-DIMM SD3I=INDUSTRIAL GRADE SO-DDR3 6 4 Capacity 64M=64MB 128M=128MB 256M=256MB 512M=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB M 1 0 0 Speed 100=100Mb/s 133=133Mb/s 266=266Mb/s 333=333Mb/s 400=400Mb/s 533=533Mb/s 667=667Mb/s 800=800Mb/s 1066=1066Mb/s 1333=1333Mbs Color / Symbol Key Advantech Confidential Q1/2016 - 31 - & Internal Use Only N N Advance Feature NN= NON-ECC and NONREGISTER ER= ECC AND REGISTER E= ECC ONLY – A P Manufacturer AP=APACER ATL=ATP DA=DATA IK=INNODISK KI=KINGSTON MI=MIRCON SB=SWISSBIT TR=TRANSCEND VI=VIRTIUM 512MB DDR2 DIMM 96D2-512M667NN-TRL 240PIN, 667Mb/s, 64Mx8, 0.720” Height, Samsung Chips 96D2-1G667NN-TRL 1GB 240PIN, 667Mb/s, 64Mx8, 0.720” Height, Samsung Chips EOL:Q2/2016 96D2-1G800NN-TRL1 240PIN, 800Mb/s, 128Mx8, 0.720” Height, Samsung Chips 96D2-1G800NN-AP3 240PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96D2-2G667NN-TRL 240PIN, 667Mb/s, 128Mx8, 0.720” Height, Samsung Chips EOL:Q4/2015 2GB 96D2-2G667-AP 240PIN, 667Mb/s, 128Mx8, 1.181” Height, Samsung Chips EOL:Q2/2016 96D2-2G800NN-TRL1 240PIN, 800Mb/s, 128Mx8, 0.720” Height, Samsung Chips 96D2-2G800NN-AP 240PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips Q1/2016 Advantech Confidential Q1/2016 - 32 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 DDR2 DIMM- Advanced Feature 2GB ECC 96D2-2G800E-AP1 240PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96D2-2G800E-TR1 240PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 1GB Registered 96D2-1G400ER-TR 240PIN, 400Mb/s, 64Mx8, 1.181” Height, Samsung Chips Q1/2016 Advantech Confidential Q1/2016 - 33 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 512MB DDR2 SO-DIMM 96SD2-512M667NN-TR 200PIN, 667Mb/s, 64Mx8, 1.181” Height, Samsung Chips 96SD2-1G667NN-TR 1GB 200PIN, 667Mb/s, 128Mx8, 1.181” Height, Samsung Chips EOL: Q3/2016 96SD2-1G800NN-AP3 200PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96SD2-1G800NN-TR1 200PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96SD2-2G667NN-TR1 2GB 200PIN, 667Mb/s, 128Mx8, 1.181” Height, Samsung Chips EOL: Q3/2016 96SD2-2G800NN-TR1 200PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96SD2-2G800NN-AP2 200PIN, 800Mb/s, 128Mx8, 1.181” Height, Samsung Chips Q1/2016 Advantech Confidential Q1/2016 - 34 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 1GB DDR3 DIMM 96D3-1G1333NN-TR1 240PIN, 1333Mb/s, 128Mx8, 1.181” Height, Samsung Chips 96D3-2G1066NN-TR 240PIN, 1066Mb/s, 128Mx8, 1.181” Height, Samsung Chips EOL:Q3/2016 96D3-2G1333NN-AP1 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips EOL:Q4/2016 2GB 96D3-2G1333NN-TR2 240PIN, 1333Mb/s, 128Mx8, 1.181” Height, Samsung Chips EOL:Q3/2016 96D3-2G1600NN-APL 240PIN, 1600Mb/s, 256Mx8, 0.740” Height, Hynix Chips 96D3-2G1600NN-TRL 240PIN, 1600Mb/s, 256Mx8, 0.74” Height, Samsung Chips 96D3-2G1600NN-TR 240PIN, 1600Mb/s, 256Mx8, 1.181” Height, MICRON Chips EOL:Q4/2015 Q1/2016 Advantech Confidential Q1/2016 - 35 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 DDR3 DIMM 96D3-4G1333NN-AP 4GB 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips EOL:Q4/2016 96D3-4G1600NN-APL 240PIN, 1600Mb/s, 256Mx8, 0.740” Height, Hynix Chips 96D3-4G1600NN-TR 240PIN, 1600Mb/s, 256Mx8, 1.181” Height, Samsung Chips EOL:Q4/2015 96D3-8G1333NN-APL 8GB 240PIN, 1333Mb/s, 512Mx8, 0.740” Height, Micron Chips EOL:Q2/2016 96D3-8G1600NN-APL 240PIN, 1600Mb/s, 512Mx8, 0.740” Height, Micron Chips 96D3-8G1600NN-TR 240PIN, 1600Mb/s, 512Mx8, 1.181” Height, Micron Chips EOL:Q4/2015 Q1/2016 Advantech Confidential Q1/2016 - 36 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 DDR3 DIMM- Advanced Feature ECC 2GB 96D3-2G1333E-AP2 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96D3-2G1333E-AT 4GB 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Samsung Chips 96D3-4G1333E-AP 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96D3-4G1333E-AT 8GB 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Samsung Chips 96D3-8G1333E-AT 240PIN, 1333Mb/s, 512Mx8, 1.181” Height, Samsung Chips 96D3-8G1600E-APL 240PIN, 1600Mb/s, 512Mx8, 0.74” Height, Micron Chips Q1/2016 Advantech Confidential Q1/2016 - 37 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 2GB DDR3 DIMM- Advanced Feature Registered 96D3-2G1333ER-AP1 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96D3-4G1333ER-AP1 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips EOL:Q4/2016 4GB 96D3-4G1333ER-ATL 240PIN, 1333Mb/s, 256Mx8, 0.74” Height, Samsung Chips EOL:Q1/2016 96D3-4G1600ER-TRL1 240PIN, 1600Mb/s, 256Mx8, 0.74” Height, Samsung Chips 96D3-4G1600ER-AT 240PIN, 1600Mb/s, 256Mx8, 1.181” Height, Samsung Chips 96D3-8G1066ER-AT 8GB 240PIN, 1066Mb/s, 256Mx8, 1.181” Height, Samsung Chips 96D3-8G1333ER-TR 240PIN, 1333Mb/s, 256Mx8, 1.181” Height, Samsung Chips EOL:Q3/2016 96D3-8G1600ER-TRL 16GB 240PIN, 1600Mb/s, 512Mx8, 0.740“ Height, MICRON Chips EOL:Q4/2015 96D3-16G1600ER-TRL 240PIN, 1600Mb/s, 2Gx4, 0.740“ Height, Samsung Chips Q1/2016 Advantech Confidential Q1/2016 - 38 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 1GB DDR3 SO-DIMM 96SD3-1G1333NN-TR1 204PIN, 1333Mb/s, 128Mx8, 1.181” Height, Samsung Chips 2GB 96SD3-2G1333NN-AP2 204PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-2G1600NN-AP 204PIN, 1600Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-4G1066NN-AP 204PIN, 1066Mb/s, 256Mx8, 1.181” Height, Hynix Chips 4GB 96SD3-4G1333NN-TR2 204PIN, 1333Mb/s, 256Mx8, 1.181” Height, Samsung Chips 96SD3-4G1333NN-AP1 204PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-4G1600NN-AP 204PIN, 1600Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-8G1333NN-TR 8GB 204PIN, 1333Mb/s, 512Mx8, 1.181” Height, Micron Chips EOL:Q4/2015 96SD3-8G1600NN-TR 204PIN, 1600Mb/s, 512Mx8, 1.181” Height, Micron Chips EOL:Q4/2015 96SD3-8G1600NN-AP 204PIN, 1600Mb/s, 512Mx8, 1.181” Height, HYNIX Chips 96SD3-8G1600NN-AT 204PIN, 1600Mb/s, 512Mx8, 1.181” Height, Samsung Chips Q1/2016 Advantech Confidential Q1/2016 - 39 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 8GB 4GB 2GB DDR3 SO-DIMM- Advanced Feature ECC 96SD3-2G1333E-AP 204PIN, 1333Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-4G1066E-AP 204PIN, 1066Mb/s, 256Mx8, 1.181” Height, Hynix Chips 96SD3-8G1333E-TR 204PIN, 1333Mb/s, 512Mx8, 1.181” Height, Samsung Chips 8GB 4GB Low Voltage 96SD3L-4G1333NN-AP Apacer, 204PIN, 1333Mb/s, 512Mx8, 1.35V, 1.181” Height, MICRO Chips 96SD3L-8G1333NN-AP 204PIN, 1333Mb/s, 512Mx8,1.35V, 1.181” Height, MICRO Chips Q1/2016 Advantech Confidential Q1/2016 - 40 - & Internal Use Only Q2/2016 Q3/2016 Q4/2016 Memory EOL Procedure  For support and product management optimization, PAPS will follow the Memory phase-out procedure as below. 1 Month 2 Month Official EOL Announcement Last Time Buy Order Replacement and Evaluation Approval Advantech Confidential - 41 - & Internal Use Only EOL Thank you Advantech Confidential - 42 - & Internal Use Only