240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Advantech
AQD-D3L16R16-SM
Datasheet
Rev. 1.0
2014-10-14
Transcend Information Inc.
1
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Description
Pin Identification
DDR3L Registered DIMM is high-speed, low power
Symbol
memory module that use 1024Mx4bits DDR3L SDRAM in
A0~A15, BA0~BA2
FBGA package, 1 pcs register in TFBGA package and a
/RAS
Row Address Strobe
/CAS
Column Address Strobe
/WE
Write Enable
/S0, /S1
Chip Selects
2048 bits serial EEPROM on a 240-pin printed circuit
board. DDR3L Registered DIMM is a Dual In-Line
Function
Address Inputs
Memory Module and is intended for mounting into 240-pin
edge connector sockets.
Synchronous design allows precise cycle control with the
CKE0, CKE1
Clock Enables
use of system clock. Data I/O transactions are possible on
ODT0, ODT1
On-die termination control
both edges of DQS. Range of operation frequencies,
DQ0~DQ63
programmable latencies allow the same device to be
CB0~CB7
useful for a variety of high bandwidth, high performance
Data Input/Output
ECC Check bits
DQS0~DQS8
Data Strobe
memory system applications.
/DQS0~/DQS8
Features
DM0~DM8
Data Masks
JEDEC standard 1.35V(1.28V~1.45V) Power supply
CK0, /CK0
Clocks Input
JEDEC standard 1.5V(1.425V~1.575V) Power supply
/RESET
Reset Pin
VDDQ=1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
/EVENT
Temperature Event Pin
RoHS compliant products.
Clock Freq: 800MHZ for 1600Mb/s/Pin
Parity error found on address and
/ERROUT
Programmable CAS Latency: 11
control bus
Programmable Additive Latency (Posted /CAS):
Parity bit for address and Control
Par-In
0,CL-2 or CL-1 clock
bus
Programmable /CAS Write Latency (CWL)
= 8(DDR3-1600)
8 bit pre-fetch
Burst Length: 4, 8
VDD
Core and I/O Power
VSS
Ground
VREFDQ, VREFCA Input/Output Reference
Bi-directional Differential Data-Strobe
VTT
Internal calibration through ZQ pin
VDDSPD
On Die Termination with ODT pin
Serial presence detect with EEPROM
On DIMM thermal Sensor
SPD Clock Input
SDA
SPD Data
NC
2
SPD Power
SCL
SA0~SA2
Transcend Information Inc.
Termination Voltage
SPD Address
No Connection
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Dimensions (Unit: millimeter)
Note:
1. Tolerances on all dimensions +/-0.15mm unless otherwise specified..
Transcend Information Inc.
3
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Pin Assignments
Pin
Pin
Pin
Pin
Pin
Pin
Pin
Pin
Pin
Pin
No
Name
No
Name
No
Name
No
Name
No
Name
01 VREFDQ 41
VSS
81
DQ32
121
VSS
161 TDQS17
02
VSS
42
/DQS8
82
DQ33
122
DQ4
162 /TDQS17
03
DQ0
43
DQS8
83
VSS
123
DQ5
163
VSS
04
DQ1
44
VSS
84
/DQS4
124
VSS
164
CB6
05
VSS
45
CB2
85
DQS4
125
TDQS9
165
CB7
06
/DQS0
46
CB3
86
VSS
126 /TDQS9 166
VSS
07
DQS0
47
VSS
87
DQ34
127
VSS
167
NC
08
VSS
48
VTT
88
DQ35
128
DQ6
168 /RESET
09
DQ2
49
VTT
89
VSS
129
DQ7
169 CKE1,NC
10
DQ3
50
CKE0
90
DQ40
130
VSS
170
VDD
11
VSS
51
VDD
91
DQ41
131
DQ12
171
A15
12
DQ8
52
BA2
92
VSS
132
DQ13
172
A14
13
DQ9
53
/Err_Out
93
/DQS5
133
VSS
173
VDD
14
VSS
54
VDD
94
DQS5
134 TDQS10 174
A12
15
/DQS1
55
A11
95
VSS
135 /TDQS10 175
A9
16
DQS1
56
A7
96
DQ42
136
VSS
176
VDD
17
VSS
57
VDD
97
DQ43
137
DQ14
177
A8
18
DQ10
58
A5
98
VSS
138
DQ15
178
A6
19
DQ11
59
A4
99
DQ48
139
VSS
179
VDD
20
VSS
60
VDD
100
DQ49
140
DQ20
180
A3
21
DQ16
61
A2
101
VSS
141
DQ21
181
A1
22
DQ17
62
VDD
102
/DQS6
142
VSS
182
VDD
23
VSS
63
NC
103
DQS6
143 TDQS11 183
VDD
24
/DQS2
64
NC
104
VSS
144 /TDQS11 184
CK0
25
DQS2
65
VDD
105
DQ50
145
VSS
185
/CK0
26
VSS
66
VDD
106
DQ51
146
DQ22
186
VDD
27
DQ18
67 VREFCA 107
VSS
147
DQ23
187 /EVENT
28
DQ19
68
Par-In
108
DQ56
148
VSS
188
A0
29
VSS
69
VDD
109
DQ57
149
DQ28
189
VDD
30
DQ24
70
A10/AP
110
VSS
150
DQ29
190
BA1
31
DQ25
71
BA0
111
/DQS7
151
VSS
191
VDD
32
VSS
72
VDD
112
DQS7
152 TDQS12 192
/RAS
33
/DQS3
73
/WE
113
VSS
153 /TDQS12 193
/S0
34
DQS3
74
/CAS
114
DQ58
154
VSS
194
VDD
35
VSS
75
VDD
115
DQ59
155
DQ30
195
ODT0
36
DQ26
76
/S1
116
VSS
156
DQ31
196
A13
37
DQ27
77
117
SA0
157
VSS
197
VDD
ODT1,NC
38
VSS
78
VDD
118
SCL
158
CB4
198
/S3,NC
39
CB0
79
/S2,NC
119
SA2
159
CB5
199
VSS
40
CB1
80
VSS
120
VTT
160
VSS
200
DQ36
ODT1, CKE1:Connected to the register on 2 and 4 rank RDIMM ; NC on 1 rank RDIMM
/S2, /S3:Connected to the register on 4 rank RDIMM ; NC on 1 or 2 rank RDIMM
Transcend Information Inc.
4
Pin
No
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
Pin
Name
DQ37
VSS
TDQS13
/TDQS13
VSS
DQ38
DQ39
VSS
DQ44
DQ45
VSS
TDQS14
/TQS14
VSS
DQ46
DQ47
VSS
DQ52
DQ53
VSS
TDQS15
/TDQS15
VSS
DQ54
DQ55
VSS
DQ60
DQ61
VSS
TDQS16
/TDQS16
VSS
DQ62
DQ63
VSS
VDDSPD
SA1
SDA
VSS
VTT
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Block Diagram
16GB, 2Gx72 Module(2 Rank x4)
Transcend Information Inc.
5
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Transcend Information Inc.
6
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPER
0 to 85 C
Note: 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
2. At 0 - 85C, operation temperature range are the temperature which all DRAM specification will be
supported.
Note
1,2
Absolute Maximum DC Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on VDD relative to Vss
VDD
-0.4 ~ 1.975
V
1
Voltage on VDDQ pin relative to Vss
VDDQ
-0.4 ~ 1.975
V
1
Voltage on any pin relative to Vss
VIN, VOUT
-0.4 ~ 1.975
V
1
Storage temperature
TSTG
-55~+100
C
1,2
1. Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
Note:
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
AC & DC Operating Conditions
Recommended DC operating conditions
Rating
Parameter
Supply voltage
Supply voltage for Output
Symbol
VDD
VDDQ
I/O Reference Voltage (DQ)
VREFDQ(DC)
I/O Reference Voltage (CMD/ADD) VREFCA(DC)
AC Input Logic High
VIH(AC)
AC Input Logic Low
VIL(AC)
DC Input Logic High
VIH(DC)
DC Input Logic Low
VIL(DC)
Transcend Information Inc.
Voltage
1.35V
1.5V
1.35V
1.5V
1.35V
1.5V
1.35V
1.5V
1.35V
1.5V
1.35V
1.5V
1.35V
1.5V
7
Min
Typ.
Max
1.283
1.425
1.283
1.425
0.49*VDDQ
0.49*VDDQ
VREF+0.160
VREF+0.175
VREF+0.09
VREF+0.1
VSS
VSS
1.35
1.5
1.35
1.5
0.50*VDDQ
0.50*VDDQ
-
1.45
1.575
1.45
1.575
0.51*VDDQ
0.51*VDDQ
VREF-0.160
VREF-0.175
VDD
VDD
VREF-0.09
VREF-0.1
Unit
Note
s
V
1, 2
V
1, 2
V
V
V
3
3
V
V
V
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD, AC parameters are measured with VDD and VDDQ tied together.
3. Peak to peak AC noise on VREF may not allow deviate from VREF(DC) by more than +/-1% VDD.
IDD Specification parameters Definition
( IDD values are for full operating range of Voltage and Temperature)
16GB, 2Gx72 Module(2 Rank x4)
Parameter
Symbol
DDR3 1600
CL11
Unit
IDD0
1750
mA
IDD1
2020
mA
IDD2P
1130
mA
IDD2Q
1390
mA
IDD2N
1360
mA
IDD3P
1310
mA
IDD3N
1710
mA
IDD4R
2560
mA
IDD4W
2650
mA
IDD5
3600
mA
IDD6
570
mA
Operating One bank Active-Precharge current; tCK = tCK(IDD),
tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, /CS is HIGH between
valid commands;Address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Operating One bank Active-read-Precharge current; IOUT = 0mA;
BL = 8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS =
tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, /CS is HIGH between
valid commands; Address bus inputs are SWITCHING; Data pattern is same
as IDD4W
Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE
is LOW; Other control and address bus inputs are STABLE; Data bus inputs
are FLOATING
Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE
is HIGH, /CS is HIGH; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is
HIGH, /CS is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Active power - down current; All banks open; tCK = tCK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
Active standby current; All banks open; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
Operating burst read current; All banks open, Continuous burst reads,
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, /CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data pattern is same as
IDD4W
Operating burst write current; All banks open, Continuous burst writes;
BL = 8, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, /CS is HIGH between valid commands; Address
bus inputs are SWITCHING; Data bus inputs are SWITCHING IDD4R
Burst refresh current; tCK = tCK(IDD); Refresh command at every
tRFC(IDD) interval; CKE is HIGH, /CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Self refresh current; CK and /CK at 0V; CKE ≒ 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are FLOATING
Transcend Information Inc.
8
240Pin DDR3L 1600 RDIMM
16GB Based on 1Gx4
AQD-D3L16R16-SM
Operating bank interleave read current; All bank interleaving reads,
IOUT = 0mA; BL = 8, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK =
tCK(IDD), Trc = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is
HIGH, CS is HIGH between valid commands;Address bus inputs are
STABLE during DESELECTs; Data pattern is same as IDD4R;
Note:
IDD7
3990
mA
1.Module IDD was calculated on the specific brand DRAM(3X nm) component IDD and can be differently
measured according to DQ loading capacitor.
Timing Parameters & Specifications
Speed
Parameter
DDR3 1600
Unit
Symbol
Min
Max
Average Clock Period
tCK
1.25