260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Advantech
AQD-SD4U8GE24-SE
Datasheet
Rev. 1.0
2017-03-13
Advantech
1
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Description
Pin Identification
DDR4 1.2V ECC SO-DIMM is high-speed, low power
Symbol
memory module that use 1Gx8bits DDR4 SDRAM in
Function
A0–A16
Register address input
BA0, BA1
Register bank select input
BG0, BG1
Register bank group select input
RAS_n1
Register row address strobe input
CAS_n2
Register column address strobe input
on both edges of DQS. Range of operation frequencies,
WE_n3
Register write enable input
programmable latencies allow the same device to be
CS0_n, CS1_n,
DIMM Rank Select Lines input
useful for a variety of high bandwidth, high performance
CKE0, CKE1
Register clock enable lines input
FBGA package and a 4096 bits serial EEPROM on a
260-pin printed circuit board. DDR4 1.2V ECC SO-DIMM
is a Dual In-Line Memory Module and is intended for
mounting into 260-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
memory system applications.
Register on-die termination control lines
ODT0, ODT1
input
Features
RoHS compliant products
ACT_n
Register input for activate input
DQ0–DQ63
DIMM memory data bus
VDDQ=1.2V (1.14V to 1.26V)
CB0–CB7
DIMM ECC check bits
Clock Freq: 1200MHZ for 2400Mb/s/Pin
DQS0_t–
Data Buffer data strobes (positive line
DQS17_t
of differential pair)
DQS0_c–
Data Buffer data strobes (negative line
DQS17_c
of differential pair)
JEDEC standard 1.2V (1.14V to 1.26V) Power supply
16 Banks (4 Bank Groups)
Programmable CAS Latency: 10, 11, 12, 13, 14,15,16,
17,18
Programmable Additive Latency (Posted /CAS):
Register clock input (positive line of
0,CL-2 or CL-1 clock
CK0_t, CK1_t
Programmable /CAS Write Latency (CWL)
= 12,16 (DDR4-2400)
differential pair)
Register clocks input (negative line of
8 bit pre-fetch
CK0_c, CK1_c
differential pair)
Burst Length: 4, 8
I2C serial bus clock for SPD/TS and
Bi-directional Differential Data-Strobe
SCL
register
On Die Termination with ODT pin
Serial presence detect with EEPROM
I2C serial bus data line for SPD/TS and
SDA
Asynchronous reset
register
PCB: 30µ gold finger
I2C slave address select for SPD/TS
SA0–SA2
and register
PARITY
Advantech
2
Register parity input
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
VDD
SDRAM core power supply
VPP
SDRAM activating power supply
SDRAM command/address reference
VREFCA
supply
VSS
Power supply return (ground)
VDDSPD
Serial SPD/TS positive power supply
ALERT_n
Register ALERT_n output
Set Register and SDRAMs to a Known
RESET_n
State
SPD signals a thermal event has
EVENT_n
occurred
VTT
SDRAM I/O termination supply
RFU
Reserved for future use
NC
No Connection
Advantech
3
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Dimensions (Unit: millimeter)
Advantech
4
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Pin Assignments
Pin
No.
Pin name-Front
Pin
No.
Pin name-Back
Pin
No.
Pin name-Front
Pin
No.
Pin name-Back
1
VSS
2
VSS
133
A1
134
EVENT_n
3
DQ5
4
DQ4
135
VDD
136
VDD
5
VSS
6
VSS
137
CK0_t
138
CK1_t
7
DQ1
8
DQ0
139
CK0_c
140
CK1_c
9
VSS
10
VSS
141
VDD
142
VDD
11
DQS0_c
12
DM0_n, DBI0_n
143
PARITY
144
A0
13
DQS0_t
14
VSS
145
BA1
146
A10/AP
15
VSS
16
DQ6
147
VDD
148
VDD
17
DQ7
18
VSS
149
CS0_n
150
BA0
19
VSS
20
DQ2
151
A14/WE_n
152
A16/RAS_n
21
DQ3
22
VSS
153
VDD
154
VDD
23
VSS
24
DQ12
155
ODT0
156
A15/CAS_n
25
DQ13
26
VSS
157
CS1_n
158
A13
27
VSS
28
DQ8
159
VDD
160
VDD
29
DQ9
30
VSS
161
ODT1
162
C0, CS2_n, NC
31
VSS
32
DQS1_c
163
VDD
164
VREFCA
33
DM1_n, DBI1_n
34
DQS1_t
165
C1, CS3_n, NC
166
SA2
35
VSS
36
VSS
167
VSS
168
VSS
37
DQ15
38
DQ14
169
DQ37
170
DQ36
39
VSS
40
VSS
171
VSS
172
VSS
41
DQ10
42
DQ11
173
DQ33
174
DQ32
43
VSS
44
VSS
175
VSS
176
VSS
45
DQ21
46
DQ20
177
DQS4_c
178
DM4_n, DBI4_n
47
VSS
48
VSS
179
DQS4_t
180
VSS
49
DQ17
50
DQ16
181
VSS
182
DQ39
51
VSS
52
VSS
183
DQ38
184
VSS
53
DQS2_c
54
DM2_n, DBI2_n
185
VSS
186
DQ35
55
DQS2_t
56
VSS
187
DQ34
188
VSS
57
VSS
58
DQ22
189
VSS
190
DQ45
59
DQ23
60
VSS
191
DQ44
192
VSS
61
VSS
62
DQ18
193
VSS
194
DQ41
63
DQ19
64
VSS
195
DQ40
196
VSS
65
VSS
66
DQ28
197
VSS
198
DQS5_c
Advantech
5
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
67
DQ29
68
VSS
199
DM5_n, DBI5_n
200
DQS5_t
69
VSS
70
DQ24
201
VSS
202
VSS
71
DQ25
72
VSS
203
DQ46
204
DQ47
73
VSS
74
DQS3_c
205
VSS
206
VSS
75
DM3_n, DBI3_n
76
DQS3_t
207
DQ42
208
DQ43
77
VSS
78
VSS
209
VSS
210
VSS
79
DQ30
80
DQ31
211
DQ52
212
DQ53
81
VSS
82
VSS
213
VSS
214
VSS
83
DQ26
84
DQ27
215
DQ49
216
DQ48
85
VSS
86
VSS
217
VSS
218
VSS
87
CB5, NC
88
CB4, NC
219
DQS6_c
220
DM6_n, DBI6_n
89
VSS
90
VSS
221
DQS6_t
222
VSS
91
CB1, NC
92
CB0, NC
223
VSS
224
DQ54
93
VSS
94
VSS
225
DQ55
226
VSS
95
DQS8_c
96
DM8_n, DBI8_n
227
VSS
228
DQ50
97
DQS8_t
98
VSS
229
DQ51
230
VSS
99
VSS
100
CB6, NC
231
VSS
232
DQ60
101
CB2, NC
102
VSS
233
DQ61
234
VSS
103
VSS
104
CB7, NC
235
VSS
236
DQ57
105
CB3, NC
106
VSS
237
DQ56
238
VSS
107
VSS
108
RESET_n
239
VSS
240
DQS7_c
109
CKE0
110
CKE1
241
DM7_n, DBI7_n
242
DQS7_t
111
VDD
112
VDD
243
VSS
244
VSS
113
BG1
114
ACT_n
245
DQ62
246
DQ63
115
BG0
116
ALERT_n
247
VSS
248
VSS
117
VDD
118
VDD
249
DQ58
250
DQ59
119
A12
120
A11
251
VSS
252
VSS
121
A9
122
A7
253
SCL
254
SDA
123
VDD
124
VDD
255
VDDSPD
256
SA0
125
A8
126
A5
257
VPP
258
VTT
127
A6
128
A4
259
VPP
260
SA1
129
VDD
130
VDD
–
–
–
–
131
A3
A2
–
–
–
–
*IC Component Composition :
Advantech
132
256Mx8
512Mx8
1024Mx8
2048Mx8
A0~A13
A0~A14,
A0~A15,
A0~A16,
512Mx4
1024Mx4
2048Mx4
6
A0~A14
A0~A15
A0~A16
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Block Diagram
8GB, 1Gx72 Module(1 Rank x8)
This technical information is based on industry standard data and tests believed to be reliable. However, Advantech makes no warranties, either
expressed or implied, as to its accuracy and assume no liability in connection with the use of this product. Advantech reserves the right to make changes
in specifications at any time without prior notice.
Advantech
7
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Note
Operating Temperature
TOPER
0 to 85
C
1,2
Note: 1.
Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
2.
At 0 - 85C, operation temperature range are the temperature which all DRAM specification will be
supported.
Absolute Maximum DC Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on VDD relative to Vss
VDD
-0.3 ~ 1.5
V
1,3
Voltage on VDDQ pin relative to Vss
VDDQ
-0.3 ~ 1.5
V
1,3
Voltage on VPP pin relative to Vss
VPP
-0.3 ~ 3.0
V
4
Voltage on any pin relative to Vss
VIN, VOUT
-0.3 ~ 1.5
V
1,3
Storage temperature
TSTG
-55~+100
C
1,2
Note: 1.
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability
2.
Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the
measurement conditions, please refer to JESD51-2 standard.
3.
VDD and VDDQ must be within 300 mV of each other at all times and VREFCA must be not greater than
0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA may be equal to or less than 300 mV
4.
VPP must be equal or greater than VDD/VDDQ at all times.
AC & DC Operating Conditions
Recommended DC operating conditions
Symbol
Parameter
Min.
1.14
1.14
2.375
Rating
Typ.
1.2
1.2
2.5
Max.
1.26
1.26
2.75
VDD
Supply Voltage
VDDQ
Supply Voltage for Output
VPP
Peak-to-Peak Voltage
NOTE:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. DC bandwidth is limited to 20MHz.
Unit
NOTE
V
V
V
1,2,3
1,2,3
3
Unit
NOTE
AC & DC Logic Input Levels for Single-Ended Signals
Symbol
Parameter
DDR4-1600/1866/2133/2400
Min.
Max.
VREFCA+ 0.075 VDD
VSS
VREFCA-0.075
VREF + 0.1
Note 2
Note 2
VREF - 0.1
0.49*VDD
0.51*VDD
VIH.CA(DC75) DC input logic high
V
VIL.CA(DC75) DC input logic low
V
VIH.CA(AC100) AC input logic high
V
1
VIL.CA(AC100) AC input logic low
V
1
VREFCA(DC)
Reference Voltage for ADD, CMD inputs
V
2,3
NOTE :
1. See “Overshoot and Undershoot Specifications” on section.
2. The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1% VDD (for
reference : approx. ± 12mV)
3. For reference : approx. VDD/2 ± 12mV
Advantech
8
260 Pin DDR4 1.2V 2400 ECC SO-DIMM
8GB Based on 1Gx8
AQD-SD4U8GE24-SE
Timing Parameters & Specifications
Speed
Parameter
DDR4 2400
Unit
Symbol
Min
Max
Average Clock Period
tCK
0.833