SQF-MSDS1-2G-21C

SQFlash Industrial Class 10 Micro SD Card SQFlash Micro SD Card Technical Manual Class 10 (SQF-MSDx1-xM/G-21x) Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 1 of 22 May 4, 2016 SQFlash Industrial Class 10 Micro SD Card CONTENTS 1. Overview ............................................................................................ 4 2. Standard Features ............................................................................. 5 3. Additional Features ........................................................................... 6 4. Pin Assignment and Block Diagram ................................................ 8 5. Power Consumption ....................................................................... 11 6. DC Characters ................................................................................. 11 7. AC Characters ................................................................................. 14 8. Dimensions ...................................................................................... 19 Appendix: Part Number Table ........................................................... 21 Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 2 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card Revision History Rev. Date History st 0.1 2014/8/4 1. 1 draft 0.2 2014/8/21 1. Add Ultra MLC 0.3 2016/5/4 1. Add SLC Advantech reserves the right to make changes without further notice to any products or data herein to improve reliability, function, or design. Information furnished by Advantech is believed to be accurate and reliable. However, Advantech does not assure any liability arising out of the application or use of this information, nor the application or use of any product or circuit described herein, neither does it convey any license under its patent rights nor the rights of others. Copyright © 1983-2015 Advantech Co., Ltd. All rights reserved. Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 3 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 1. Overview The SQFlash Micro Secure Digital card (SQF-MSD) is fully compliant to the specification released by SD Card Association. The Command List supports [Part 1 Physical Layer Specification Ver3.01 Final] definitions. Card Capacity of Non-secure Area, Secure Area Supports [Part 3 Security Specification Ver3.00 Final] specifications. The microSD 3.0 card comes with 8-pin interface, designed to operate at a maximum operating frequency of 50MHz or 100MHz. It can alternate communication protocol between the SD mode and SPI mode. It performs data error detection and correction with very low power consumption. Its capacity could be more than 128MB and up to 64GB. SQFlash Industrial Micro SD card is one of the most popular cards today based on its high performance, good reliability and wide compatibility. Not to mention that it’s well adapted for hand-held applications in semi-industrial/medical markets already. Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 4 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 2. Standard Features  Support SD system specification version 3.0  Card capacity of non-secure area and secure area support [Part 3 Security Specification Ver3.0 Final] Specifications  Support SD SPI mode  Designed for read-only and read/write cards  Bus Speed Mode (using 4 parallel data lines) – UHS-I mode ● SDR12 - SDR up to 25MHz 1.8V signaling ● SDR25 - SDR up to 50MHz 1.8V signaling ● SDR50: 1.8V signaling, Frequency up to 100 MHz, up to 50MB/sec ● SDR104: 1.8V signaling, Frequency up to 208MHz, up to 104MB/sec ● DDR50: 1.8V signaling, Frequency up to 50 MHz, sampled on both clock edges, up to 50MB/sec Note: Timing in 1.8V signaling is different from that of 3.3V signaling.  The command list supports [Part 1 Physical Layer Specification Ver3.1 Final] definitions  Copyrights Protection Mechanism – Compliant with the highest security of SDMI standard  Support CPRM (Content Protection for Recordable Media) of SD Card  Card removal during read operation will never harm the content  Password Protection of cards (optional)  Write Protect feature using mechanical switch  Built-in write protection features (permanent and temporary)  +4KV/-4KV ESD protection in contact pads  Operation voltage range: 2.7 ~ 3.6V Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 5 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 3.  Additional Features Capacities – – –  SLC type : 128MB，256MB，512MB，1GB，2GB MLC type：4GB，8GB，16GB，32GB，64GB Ultra MLC type：2GB，4GB，8GB，16GB，32GB Flash type – –  24 nm SLC A19 nm MLC Performance (SLC)  Sequential Capacity Mode 128MB 256MB 512MB 1GB 2GB Non-UHS Non-UHS Non-UHS Non-UHS Non-UHS Read (MB/s) 16 16 16 18 20 Write (MB/s) 4 10 10 10 20 Performance (MLC)  Capacity Mode 2GB 4GB 8GB 16GB 32GB 64GB UHS-I UHS-I UHS-I UHS-I UHS-I UHS-I Sequential Read (MB/s) 90 90 90 90 90 90 Write (MB/s) 20 20 30 40 40 45 Temperature Ranges – Normal Temperature ● -25℃ to 85℃ – Industrial Temperature ● -40℃ to 85℃  Mechanical Specification – – – – – – Shock：1,500G, Peak / 0.5ms Vibration：20G, Peak / 20~2000Hz Drop: 1.5m free fall Bending: ≥ 10N, hold 1min / 5times Torque: 0.15N-m or +/-2.5deg Salt Spray: ● Concentration: 3% NaCl ● Temperature: 35℃ ● Storage for 24 HRS – Waterproof: JIS IPX7 compliance  Humidity – – Operating Humidity：5% ~ 93% Non-Operating Humidity：5% ~ 93% Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 6 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card  NAND flash Data Retention – 10 years Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 7 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 4.  Flash Management Error Correction Code (ECC) Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data. Thus, SQF-MSD applies the BCH ECC algorithm, which can detect and correct errors occur during read process, ensure data been read correctly, as well as protect data from corruption.  Wear Leveling NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases, the flash media are not used evenly. If some area get updated more frequently than others, the lifetime of the device would be reduced significantly. Thus, Wear Leveling technique is applied to extend the lifespan of NAND Flash by evenly distributing write and erase cycles across the media. SQF-MSD provides advanced Wear Leveling algorithm, which can efficiently spread out the flash usage through the whole flash media area. Moreover, by implementing both dynamic and static Wear Leveling algorithms, the life expectancy of the NAND Flash is greatly improved.  Bad Block Management Bad blocks are blocks that include one or more invalid bits, and their reliability is not guaranteed. Blocks that are identified and marked as bad by the manufacturer are referred to as “Initial Bad Blocks”. Bad blocks that are developed during the lifespan of the flash are named “Later Bad Blocks”. SQF-MSD implements an efficient bad block management algorithm to detect the factory-produced bad blocks and manages any bad blocks that appear with use. This practice further prevents data being stored into bad blocks and improves the data reliability.  Auto-Read Refresh Auto-Read Refresh is specifically applied on devices that read data mostly but rarely write data, such as GPS. When blocks are continuously read, then the device cannot activate wear leveling since it can only be applied while writing data. Thus, errors will accumulate and become uncorrectable. Accordingly, to avoid errors exceed the amount ECC can correct and blocks turn bad, The firmware of SQF-MSD will automatically refresh the bit errors when the error number in one block approaches the threshold, ex., 24 bits. Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 8 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card  Endurance JEDEC defined an endurance rating TBW (TeraByte Written), following by the equation below, for indicating the number of terabytes a flash drive can be written which is a measurement of flash drive’s expected lifespan, represents the amount of data written to the device. TBW = [(NAND Endurance) x (Flash Drive Capacity)] / WAF    NAND Endurance: Program / Erase cycle of a NAND flash. o SLC: 60,000 cycles o Ultra MLC: 20,000 cycles o MLC: 3,000 cycles Flash Drive Capacity: Physical capacity in total of a Flash Drive. WAF: Write Amplification Factor (WAF), as the equation shown below, is a numerical value representing the ratio between the amount of data that a flash drive controller needs to write and the amount of data that the host’s flash controller writes. A better WAF, which is near to 1, guarantees better endurance and lower frequency of data written to flash memory. WAF = (Lifetime write to flash) / (Lifetime write to host) The TBW rating for a flash drive shall be derived for and verified under the following workload conditions,  Sequential Write (copy file into card)  P/E cycles incurred: erase count after writing – erase count before writing  SQFlash Micro SD Card TBW TBW capacity WAF SLC WAF Ultra MLC MLC 128 MB 7 -- -- -- 256 MB 14 -- -- -- 1 GB 58 -- -- -- 117 39 -- 4 GB 234 77 11 8 GB 469 155 23 16 GB 937 310 47 32 GB 1874 621 93 2 GB 1.024414 1.0301339 64 GB -- -- 1243 186 128 GB -- -- -- 372 Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 9 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 5. Pin Assignment and Block Diagram pin 1 SD Mode Type1 Description Name 3 4 5 CMD VDD CLK PP S I 6 VSS S Supply voltage ground VSS S 7 8 DAT0 DAT1 I/O/PP I/O/PP Data Line[bit0] Data Line[bit1] DO RSV O/PP CD/DAT3 I/O/PP SPI Mode Type Description Data Line[bit2] Card Detect/ Data Line[bit3] Command/Response Supply voltage Clock 2 DAT2 Name 2 I/O/PP 3 RSV CS I3 DI VDD SCLK I S I Chip Select (neg true) Data In Supply voltage Clock Supply voltage ground Data Out (1) S: power supply, I: input; O: output using push-pull drivers; PP:I/O using push-pull driver (2) The extended DAT lines (DAT1-DAT3)are input on power up. They start to operate as DAT lines after SET_BUS_WIDTH command. The Host shall keep its own DAT1-DAT3 lines in input mode, as well, while they are not used. It is defined so, in order to keep compatibility to MultiMedia Cards. (3) At power up this line has a 50KOhm pull up enabled in the card. This resistor serves two functions Card detection and Mode Selection. For Mode Selection, the host can drive the line high or let it be pulled high to select SD mode. If the host wants to select SPI mode it should drive the line low. For Card detection, the host detects that the line is pulled high. This pull-up should be disconnected by the user during regular data transfer period, with SET_CLR_CARD_DETECT (ACMD42) command. Name Width CID 128bit RCA1 16bit DSR 16bit CSD 128bit SCR 64bit OCR 32bit SSR 512bit OCR 32bit Description Card identification number; card individual number for identification. Mandatory Relative card address; local system address of a card, dynamically suggested by the card and approved by the host during initialization. Mandatory Driver Stage Register; to configure the card’s output drivers. Optional Card Specific Data; information about the card operation conditions. Mandatory SD Configuration Register; information about the SD Memory Card's Special Features capabilities Mandatory Operation conditions register. Mandatory. SD Status; information about the card proprietary features Mandatory Card Status; information about the card status Mandatory Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 10 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card 6. Power Consumption Table list as below is the power consumption of SQF-MSD card with different type of flash memory. Capacity Flash Structure Read Write Idle 4GB 8GB 16GB 32GB 64GB 4GB x 1 8GB x 1 8GB x 2 8GB x 4 8GB x 8 100 100 150 180 200 100 100 150 180 200 150 150 180 220 250 (1) Data transfer mode is single channel. 7. Electrical Specifications Absolute Maximum Rating Item Symbol Parameter 1 VDD-VSS DC Power Supply 2 VIN Input Voltage 3 Ta Operating Temperature (Gold) 4 Ta Operating Temperature (Diamond) 5 Tst Storage Temperature 6 VDD VDD Voltage 8.  MIN -0.3 VSS-0.3 -25 -40 -40 2.7 MAX +3.3 VDD+0.3 +85 +85 +85 3.6 Unit V V V DC Characters BUS Operating Conditions for 3.3V Signaling  Threshold level for High Voltage Range Parameter Symbol Min Max Unit 3.6 V 0.125*VDD V V Supply voltage VDD 2.7 Output High Voltage Output Low Voltage VOH VOL 0.75*VDD Input High Voltage VIH 0.625*VDD VDD+0.3 V Input Low Voltage VIL VSS-0.3 0.25 *VDD V 250 ms Power up time Remarks IOH=-100uA VDDMin. IOL = 100uA VDD min from 0v to VDD min. Bus signal levels   Specifications subject to change without notice, contact your sales representatives for the most update information. REV 0.3 Page 11 of 22 May. 4, 2016 SQFlash Industrial Class 10 Micro SD Card  Peak Voltage and Leakage Current Parameter Symbol Peak voltage on all lines Input Leakage Current Output Leakage Current  Min Max -0.3 VDD+0.3 All Inputs -10 10 All Outputs -10 10 Remarks uA uA Bus Signal Line Levels Parameter symbol Min Max Unit Remark 100 kΩ to prevent bus floating 1 card CHOST+CBUS shall not exceed 30 pF Pull-up resistance RCMD RDAT Total bus capacitance for each signal line CL 40 pF CCAR D 10 pF 16 nH fpp