ACT-SF512K16N-39P3Q

ACT–SF512K16 High Speed 512Kx16 SRAM/FLASH Multichip Module CIRCUIT TECHNOLOGY FEATURES www.aeroflex.com s Packaging – Hermetic Ceramic s 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM s Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash) s 512K x 16 SRAM s 512K x 16 5V Flash s Organized as 512K x 16 of SRAM and 512K x 16 of Flash Memory with Separate Data Buses s Both Blocks of Memory are User Configurable as 1M x 8 s Low Power CMOS s Input and Output TTL Compatible Design s MIL-PRF-38534 Compliant MCMs Available s Decoupling Capacitors and Multiple Grounds for Low Noise s Industrial and Military Temperature Ranges s Industry Standard Pinouts Note: Programming information available upon request 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder, Aeroflex code# "P3" q 66 Pin, 1.08" x 1.08" x .185" PGA Type, With Shoulder, Aeroflex code# "P7" q 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) s DESC SMD Pending – 5962-96901 q FLASH MEMORY FEATURES s Sector Architecture (Each Die) s s s s s Equal Sectors of 64K bytes each combination of sectors can be erased with one command sequence. +5V Programing, 5V ±10% Supply Embedded Erase and Program Algorithms Hardware and Software Write Protection Internal Program Control Time. 10,000 Erase / Program Cycles q Any q8 Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18) Pin Description SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2 FI/O0-15 OE A0 – A18 512Kx8 SRAM 8 SI/O0-7 512Kx8 SRAM 8 SI/O8-15 512Kx8 Flash 8 FI/O0-7 512Kx8 Flash 8 FI/O8-15 SI/O0-15 A0–18 FWE1-2 Flash Data I/O SRAM Data I/O Address Inputs Flash Write Enables SWE1-2 SRAM Write Enables FCE1-2 SCE1-2 OE NC VCC GND Flash Chip Enables SRAM Chip Enables Output Enable Not Connected Power Supply Ground eroflex Circuit Technology - Advanced Multichip Modules © SCD1663 REV A 4/28/98 Absolute Maximum Ratings Symbol TC TSTG VG TL Parameter Flash Data Retention Flash Endurance (Write/Erase Cycles) 10 Years 10,000 Operating Temperature Storage Temperature Maximum Signal Voltage to Ground Maximum Lead Temperature (10 seconds) Rating Range -55 to +125 -65 to +150 -0.5 to +7 300 Units °C °C V °C Normal Operating Conditions Symbol VCC VIH VIL Parameter Power Supply Voltage Input High Voltage Input Low Voltage Minimum +4.5 +2.2 -0.5 Maximum +5.5 VCC + 0.3 +0.8 Units V V V Capacitance (VIN = 0V, f = 1MHz, TC = 25°C) Symbol CAD COE CWE1,2 CCE1,2 CI / O Parameter A0 – A18 Capacitance OE Capacitance F/S Write Enable Capacitance F/S Chip Enable Capacitance I/O0 – I/O15 Capacitance Maximum 50 50 20 20 20 Units pF pF pF pF pF These parameters are guaranteed by design but not tested DC Characteristics (VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C, unless otherwise indicated) Parameter Input Leakage Current Output Leakage Current Sym ILI ILO Conditions VCC = Max, VIN = 0 to VCC FCE = SCE = VIH, OE = VIH, VOUT = 0 to VCC Min Max Units 10 10 260 35 0.4 2.4 130 150 0.45 0.85 x VCC 3.2 4.2 µA µA mA mA V V mA mA V V V SCE = VIL, OE = VIH, f = 5MHz, VCC = SRAM Operating Supply Current x 16 ICCx16 Max, FCE = VIH Mode Standby Current SRAM Output Low Voltage SRAM Output High Voltage Flash Vcc Active Current for Read (1) Flash Vcc Active Current for Program or Erase (2) Flash Output Low Voltage Flash Output High Voltage Flash Low Vcc Lock Out Voltage ISB VOL VOH ICC1 ICC2 VOL VOH VLKO FCE = SCE = VIH, OE = VIH, f = 5MHz, VCC = Max IOL = 8 mA, VCC = Min, FCE = VIH IOH = -4.0 mA, , VCC = Min, FCE = VIH FCE = VIL, OE = VIH, SCE = VIH FCE = VIL, OE = VIH, SCE = VIH IOL = 8 mA, VCC = Min, SCE = VIH IOH = -2.5 mA, , VCC = Min, SCE = VIH Notes: 1) The ICC current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The frequency component typically is less than 2mA/MHz, with OE at VIH 2) ICC active while Embedded Algorithim (program or erase) is in progress 3) DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V 2 Aeroflex Circuit Technology SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 SRAM AC Characteristics (VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C) Read Cycle Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Hold from Address Change Output Enable to Output Valid Chip Select to Output in Low Z * Output Enable to Output in Low Z * Chip Deselect to Output in High Z * Output Disable to Output in High Z * * Parameters guaranteed by design but not tested Symbol tRC tAA tACE tOH tOE tCLZ tOLZ tCHZ tOHZ 2 0 12 12 0 12 4 0 15 15 –025 Min Max 25 25 25 0 25 –035 Min Max 35 35 35 Units ns ns ns ns ns ns ns ns ns Write Cycle Parameter Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Output Active from End of Write * Write to Output in High Z * Data Hold from Write Time Address Hold Time * Parameters guaranteed by design but not tested Symbol tWC tCW tAW tDW tWP tAS tOW tWHZ tDH tAH 0 0 –025 Min Max 25 17 17 13 17 2 4 13 0 0 –035 Min Max 35 25 25 20 25 2 4 15 Units ns ns ns ns ns ns ns ns ns ns Truth Table Mode Standby Read Output Disable Write SCE H L L L OE X L H X SWE X H H L Data I/O High Z Data Out High Z Data In Power Standby Active Active Active Aeroflex Circuit Technology 3 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 Timing Diagrams — SRAM Read Cycle Timing Diagrams Read Cycle 1 (SCE = OE = VIL, SWE = VIH) tRC A0-18 tAA tOH DI/O Previous Data Valid Data Valid SCE tAS SWE SEE NOTE Write Cycle Timing Diagrams Write Cycle (SWE Controlled, OE = VIH) tWC A0-18 tAW tCW tAH tWP tWHZ tDW Data Valid tOW tDH DI/O Read Cycle 2 (SWE = VIH) tRC A0-18 tAA SCE tACE tCLZ SEE NOTE Write Cycle (SCE Controlled, OE = VIH ) tWC A0-18 tAW tCHZ SEE NOTE tAH tCW tAS SCE OE tWP tOE tOLZ SEE NOTE tOHZ SEE NOTE SWE tDW DI/O Data Valid tDH DI/O High Z Data Valid UNDEFINED DON’T CARE Note: Guaranteed by design, but not tested. AC Test Circuit Current Source IOL AC Test Conditions Parameter Input Pulse Level Input Rise and Fall Input and Output Timing Reference Typical 0 – 3.0 5 1.5 Units V ns V To Device Under Test CL = 50 pF VZ ~ 1.5 V (Bipolar Supply) IOH Current Source Notes: 1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75Ω. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance. 4 Aeroflex Circuit Technology SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 Flash AC Characteristics – Read Only Operations (Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C) Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Output Valid Chip Enable to Output High Z (1) Output Enable High to Output High Z(1) Output Hold from Address, CE or OE Change, Whichever is First Note 1. Guaranteed by design, but not tested Symbol –60 –70 –90 Units JEDEC Stand’d Min Max Min Max Min Max tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH 0 60 60 60 30 20 20 0 70 70 70 35 20 20 0 90 90 90 35 20 20 ns ns ns ns ns ns ns Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled (Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C) Parameter Write Cycle Time Chip Enable Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation Sector Erase Time Read Recovery Time before Write Vcc Setup Time Chip Programming Time Chip Enable Hold Time Chip Erase Time 1. Toggle and Data Polling only. Symbol JEDEC Stand’d tAVAC tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tWC tCE tWP tAS tDS tDH tAH tWPH –60 –70 –90 Min Max Min Max Min Max 60 0 40 0 40 0 45 20 14 TYP 30 0 0 50 50 50 10 120 120 50 50 10 120 70 0 45 0 45 0 45 20 14 TYP 30 0 50 90 0 45 0 45 0 45 20 14 TYP 30 Units ns ns ns ns ns ns ns ns µs Sec µs µs Sec ns Sec tGHWL tVCE tOEH 1 tWHWH3 10 Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled (Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C) Parameter Write Cycle Time Write Enable Setup Time Chip Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Enable Pulse Width High Duration of Byte Programming Sector Erase Time Read Recovery Time Chip Programming Time Chip Erase Time Symbol JEDEC Stand’d tAVAC tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHEL tWHWH1 tWHWH2 tWC tWS tCP tAS tDS tDH tAH tCPH –60 –70 –90 Min Max Min Max Min Max 60 0 40 0 40 0 45 20 14 TYP 30 0 50 0 50 120 70 0 45 0 45 0 45 20 14 TYP 30 0 50 120 90 0 45 0 45 0 45 20 14 TYP 30 Units ns ns ns ns ns ns ns ns µs Sec ns Sec Sec tGHEL tWHWH3 5 120 Aeroflex Circuit Technology SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 AC Waveforms for Flash Memory Read Operations tRC Addresses Addresses Stable tACC FCE tDF OE tOE FWE tCE Outputs High Z tOH Output Valid High Z Write/Erase/Program Operation for Flash Memory, FWE Controlled Data Polling Addresses 5555H tWC FCE tGHWL OE tWP FWE tCE tDH AOH Data tDS PD D7 DOUT tOH tOE tWPH tDF tWHWH1 tAS PA tAH PA tRC 5.0V tCE Notes: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7 is the 0utput of the complement of the data written to the deviced. 4. Dout is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Aeroflex Circuit Technology 6 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 AC Waveforms Chip/Sector Erase Operations for Flash Memory tAH Addresses 5555H tAS 2AAAH Data Polling 5555H 5555H 2AAAH SA FCE tGHWL OE tWP FWE tCE Data tWPH tDH AAH tDS VCC 55H 80H AAH 55H 10H/30H tVCE Notes: 1. SA is the sector address for sector erase. AC Waveforms for Data Polling During Embedded Algorithm Operations for Flash Memory tCH FCE tDF tOE OE tOEH FWE tCE tOH * DQ7 DQ7 DQ7= Valid Data High Z tWHWH1 or 2 DQ0-DQ6 DQ0–DQ6=Invalid DQ0–DQ6 Valid Data tOE * DQ7=Valid Data (The device has completed the Embedded operation). Aeroflex Circuit Technology 7 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 Write/Erase/Program Operation for Flash Memory, FCE Controlled Data Polling Addresses 5555H tWC FCE tGHWL OE tCP FWE tWS tCPH tDH AOH Data tDS PD D7 DOUT tWHWH1 tAS PA tAH PA 5.0V Notes: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7 is the 0utput of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. Aeroflex Circuit Technology 8 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 Pin Numbers & Functions 66 Pins — PGA-Type Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function SI/O8 SI/O9 SI/O10 A13 A14 A15 A16 A18 SI/O0 SI/O1 SI/O2 SWE2 SCE2 GND SI/O11 A10 A11 Pin # 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Function A12 Vcc SCE1 NC SI/O3 SI/O15 SI/O14 SI/O13 SI/O12 OE A17 SWE1 SI/O7 SI/O6 SI/O5 SI/O4 FI/O8 Pin # 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Function FI/O9 FI/O10 A6 A7 NC A8 A9 FI/O0 FI/O1 FI/O2 VCC FCE2 FWE2 FI/O11 A3 A4 A5 Pin # 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 Function FWE1 FCE1 GND FI/O3 FI/O15 FI/O14 FI/O13 FI/O12 A0 A1 A2 FI/O7 FI/O6 FI/O5 FI/O4 "P3" — 1.08" SQ PGA Type (without shoulder) Package "P7" — 1.08" SQ PGA Type (with shoulder) Package Bottom View (P7 & P3) Side View (P7) .185 MAX .025 .035 .050 Pin 56 Side View (P3) 1.085 SQ MAX 1.000 .600 Pin 1 1.030 1.040 .100 1.030 1.040 .100 1.000 .020 .016 .180 TYP .020 .016 Pin 66 Pin 11 .180 TYP .160 MAX .100 All dimensions in inches Aeroflex Circuit Technology 9 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 Pin Numbers & Functions 68 Pins — Dual-Cavity CQFP Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function GND FCE1 A5 A4 A3 A2 A1 A0 NC SI/O0 SI/O1 SI/O2 SI/O3 SI/O4 SI/O5 SI/O6 SI/O7 Pin # 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Function GND SI/O8 SI/O9 SI/O10 SI/O11 SI/O12 SI/O13 SI/O14 SI/O15 Vcc A11 A12 A13 A14 A15 A16 SCE1 Pin # 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Function OE SCE2 A17 SWE2 FWE1 FWE2 A18 NC NC FI/O15 FI/O14 FI/O13 FI/O12 FI/O11 FI/O10 FI/O9 FI/O8 Pin # 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Function GND FI/O7 FI/O6 FI/O5 FI/O4 FI/O3 FI/O2 FI/O1 FI/O0 VCC A10 A9 A8 A7 A6 SWE1 FCE2 "F18" — CQFP Package .990 SQ ±.010 .940 SQ ±.010 .140 MAX Pin 61 Pin 60 .008 ±.002 .040 .015 ±.002 .900 SQ REF .640 SQ REF Metal spacer .010 ±.008 .015 ±.002 Pin 9 Pin 10 Detail “A” Pin 26 Pin 27 .800 REF Pin 44 Pin 43 See Detail “A” All dimensions in inches 10 Aeroflex Circuit Technology SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700 CIRCUIT TECHNOLOGY Ordering Information Model Number ACT–SF512K16N–26P3Q ACT–SF512K16N–37P3Q ACT–SF512K16N–39P3Q ACT–SF512K16N–26P7Q ACT–SF512K16N–37P7Q ACT–SF512K16N–39P7Q ACT–SF512K16N–26F18Q ACT–SF512K16N–37F18Q ACT–SF512K16N–39F18Q DESC SMD Number 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) 5462-96901 (Pending) Speed 25(S) / 60(F) ns 35(S) / 70(F) ns 35(S) / 90(F) ns 25(S) / 60(F) ns 35(S) / 70(F) ns 35(S) / 90(F) ns 25(S) / 60(F) ns 35(S) / 70(F) ns 35(S) / 90(F) ns Package 1.08"sq PGA-Type 1.08"sq PGA-Type 1.08"sq PGA-Type 1.08"sq PGA-Type 1.08"sq PGA-Type 1.08"sq PGA-Type .94"sq CQFP .94"sq CQFP .94"sq CQFP Note: (S) = Speed for SRAM, (F) = Speed for FLASH Part Number Breakdown ACT– S F 512K 16 N– 26 P7 Q Aeroflex Circuit Technology Memory Type S (SRAM) & F (FLASH) Combo Memory Depth Options, N = none Memory Width, Bits Memory Speed Code 26 = 25ns SRAM & 60ns FLASH 37 = 35ns SRAM & 70ns FLASH 39 = 35ns SRAM & 90ns FLASH Screening C = Commercial Temp, 0°C to +70°C I = Industrial Temp, -40°C to +85°C T = Military Temp, -55°C to +125°C M = Military Temp, -55°C to +125°C, Screening * Q = MIL-PRF-38534 Compliant / SMD Package Type & Size Surface Mount Packages Thru-Hole Packages F18 = .94"SQ 68 Lead Dual-Cavity P3 = 1.085"SQ PGA 66 Pins with out shoulder CQFP P7 = 1.085"SQ PGA 66 Pins with shoulder * Screened to the individual test methods of MIL-STD-883 Specifications subject to change without notice. Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 Aeroflex Circuit Technology Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553 11 SCD1663 REV A 4/28/98 Plainview NY (516) 694-6700