JANTXV2N4150

NPN Power Silicon Transistor 2N4150 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 • TO-5 Package Maximum Ratings Symbol 2N4150 Units Collector - Emitter Voltage Ratings VCEO 70 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 10.0 Vdc IC 10.0 Adc PT 160 15 W W Operating & Storage Temperature Range Top, Tstg -65 to +200 °C Thermal Resistance, Junction-to-Case Junction-to-Ambient RθJC RθJA 10.0 175.0 °C/W Collector Current Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C (2) 1) Derate linearly @ 5.7 mW/°C for TA > +25°C 2) Derate linearly @ 100 mW/°C for TC > +25°C Electrical Characteristics (TC = 25°C unless otherwise noted) OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc Symbol Mimimum Maximum Units V(BR)CEO 70 --- Vdc Collector - Emitter Cutoff Current VBE = 0.5 Vdc, VCE = 60 Vdc ICEX --- 10 μAdc Collector - Emitter Cutoff Current VCE = 60 Vdc ICEO --- 10 μAdc Emitter - Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc IEBO --- 10 0.1 μAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc ICBO --- 10 0.1 Revision Date: 10/21/2015 μAdc 1 2N4150 Electrical Characteristics -con’t ON Characteristics Symbol Mimimum Maximum HFE 50 200 40 120 10 --- --- 0.6 Units Collector-Base Cutoff Current IC = 1.0 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 10.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc IC = 10.0 Adc, IB = 1.0 Adc Base-Emitter Saturation Voltage IC = 5.0 Adc, IB = 0.5 Adc VCE(sat) Vdc 2.5 VBE(sat) --- IC = 10.0 Adc, IB = 1.0 Adc 1.5 Vdc 2.5 DYNAMIC Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc, VCE= 10.0 Vdc, f = 10 MHz Output Capacitance I = 0, VCB = 10.0 V, f =