MA4AGSW3

SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Features • • • • • • • • • Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth: 50 MHz to 70 GHz Insertion Loss: 0.8 dB Isolation: 31 dB @ 50 GHz Low Current Consumption: -10 mA for Low Loss State +10 mA for Isolation State MACOMs Unique AlGaAs Hetero-Junction Anode Technology Silicon Nitride Passivation Polymer Scratch Protection RoHS* Compliant Applications • Aerospace & Defense • ISM Yellow areas indicate bond pads Description The MA4AGSW3 is an Aluminum-Gallium-Arsenide, single pole, triple throw (SP3T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components. 1 Ordering Information Part Number Package MA4AGSW3 waffle pack MASW-000553-13220G Gel Pack * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Electrical Specifications: TA = +25°C, ±10 mA Bias Current1, ±5 V (on-wafer measurements) Parameter Test Conditions Units Min. Typ. Max. Insertion Loss 0.05 - 18 GHz 18 - 50 GHz dB — 0.6 0.8 0.7 1.1 Isolation 0.05 - 18 GHz 18 - 50 GHz dB 38 24 45 31 — Input Return Loss 0.05 - 18 GHz 18 - 50 GHz dB — 21 24 — Output Return Loss 0.05 - 18 GHz 18 - 50 GHz dB — 26 20 — Switching Speed2 (10 - 90% RF Voltage) ±5 V TTL Compatible PIN Diode Driver, 10 GHz ns — 20 — 1. Bias current of ±10 mA is recommended for optimal performance. 2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a ±5 V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 Ω to achieve 15 ns rise and fall times. Absolute Maximum Ratings3,4,5 @ TA = +25°C Parameter Absolute Maximum Incident C.W. RF Power 23 dBm DC Reverse Voltage 25 V Bias Current ±25 mA Junction Temperature +175°C Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Assembly Temperature +300°C < 10 sec. 3. Maximum combined operating conditions for RF Power, DC bias, and temperature: 23 dBm C.W. @ 10 mA (per diode) @ +85°C. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Typical RF Performance Curves @ +25°C (probed on wafer) Insertion Loss @ -10 mA Isolation @ +10 mA 0.0 0 J2 J3 J4 -0.2 J2 J3 J4 -20 (dB) (dB) -0.4 -40 -0.6 -60 -0.8 -1.0 0 10 20 30 40 -80 50 0 10 Frequency (GHz) Input Return Loss @ -10 mA 40 50 0 J2 J3 J4 J2 J3 J4 -10 (dB) -10 (dB) 30 Output Return Loss @ -10 mA 0 -20 -30 -40 20 Frequency (GHz) -20 -30 0 10 20 30 Frequency (GHz) 40 50 -40 0 10 20 30 40 50 Frequency (GHz) 3 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Operation of the MA4AGSW3 Switch The simultaneous application of a negative DC current to the low loss port and positive DC current to the remaining isolated switching port is required for the operation of the MA4AGSW3, AlGaAs, PIN switch. The backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port J1. The forward bias voltage at J2, J3 & J4 will not exceed ±1.6 V and is typically ±1.4 V with supply current of ±10 mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The bias network design shown below should yield >30 dB RF to DC Isolation. The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC return path, (J1). A minimum value of | -2 V | is recommended at this return node, which is achievable with a standard, ±5 V TTL Controlled PIN Diode Driver. MA4AGSW3 Schematic with a Typical External 2 - 18 GHz Bias Network 22 pF DC Bias 22 nH 39 pF MA4AGSW3 22 pF J3 J2 22 pF J4 22 nH 22 nH J1 22 nH 22 pF 39 pF 39 pF 39 pF R4 DC Bias DC Bias Typical Driver Connections Control Level (DC Current) RF Output State J2 J3 J4 J2 - J1 J3 - J1 J4 - J1 -10 mA +10 mA +10 mA Low Loss Isolation Isolation +10 mA -10 mA +10 mA Isolation Low Loss Isolation +10 mA +10 mA -10 mA Isolation Isolation Low Loss 4 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 MADR-011022 Driver with MA4AGSW3 Switch Application Schematic 2 - 18 GHz VCC VEEA VSEQ C1 C2 DS EN C2 A1 Driver 1 C1 C4 R1 C5 B1 To J2 Bias 22 pF 39 pF R2 MA4AGSW3 C3 22 pF VEEB VCC VEEA C6 DS EN C1 22 pF J4 22 nH 22 nH J1 22 nH C7 A2 Driver 2 J3 J2 VSEQ C2 DC Bias 22 nH To J3 Bias C9 R3 To J4 Bias 22 pF 39 pF DC Bias 39 pF 39 pF R4 DC Bias B2 C8 VEEB Parts List6 C1, C3, C6, C8 0.1 µF C2, C7 47 pF C4, C5, C9 470 pF R1 - R3 320 Ω R4 500 Ω 6. Resistor values calculated to provide ~10 mA of bias current given VCC = 5 V, VEEB = -10 V, voltage drop at driver output 0.4 V and VF of switch diodes 1.4 V. 5 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Chip Dimensions and Bonding Pad Locations (In Yellow) Dimensions mils mm Min. Typ. Max. Min. Typ. Max. A 52.0 53.0 54.0 1.321 1.346 1.372 B 53.0 54.0 55.0 1.346 1.372 1.397 C 45.0 45.5 46.0 1.143 1.156 1.168 D 21.5 22.0 22.5 0.546 0.559 0.572 E 23.0 23.5 24.0 0.584 0.597 0.610 F 21.5 22.0 22.5 0.546 0.559 0.572 G 3.5 4.0 4.5 0.089 0.102 0.114 H 3.5 4.0 4.5 0.089 0.102 0.114 6 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 Assembly Instructions Cleanliness The chip should be handled in a clean environment. Static Sensitivity This device is considered ESD Class 1A, HBM. Proper ESD techniques should be used during handling. General Handling The protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with vacuum pickup tools, or alternatively with plastic tweezers. Assembly Techniques The MA4AGSW3, AlGaAs switch is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. Solder DIE Attach Only solders which do not scavenge gold, such as 80Au/20Sn or Indalloy #2 is recommended. Do not expose die to temperatures >300°C for more than 10 seconds. Conductive Epoxy DIE Attach Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour. Ribbon/Wire Bonding Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at www.macom.com. 7 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782 SP3T AlGaAs PIN Diode Switch MA4AGSW3 Rev. V9 MACOM Technology Solutions Inc. (“MACOM”). All rights reserved. These materials are provided in connection with MACOM’s products as a service to its customers and may be used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to specifications and product descriptions, which MACOM may make at any time, without notice. These materials grant no license, express or implied, to any intellectual property rights. THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY RESULT FROM USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 8 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support DC-0004782