MAAP-011139-DIE

MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Features         High Gain: 24 dB @ 30 GHz P1dB: 34.5 dBm PSAT: 36.5 dBm IM3 Level: -27 dBc @ POUT = 29 dBm/tone Power Added Efficiency: 23% @ PSAT Return Loss: 10 dB Bare Die Dimensions: 3.1 x 2.8 x 0.05 mm RoHS* Compliant Functional Diagram 2 VG 1 3 4 5 6 GND VD1 V D2 VD3 7 GND 8 V D4 RFIN RFOUT Description The MAAP-011139-DIE is a 4-stage, 4 W power amplifier in bare die form. This power amplifier operates from 28.5 to 31.0 GHz and provides 24 dB of linear gain, 4 W saturated output power, and 23% efficiency while biased at 6 V. The MAAP-011139-DIE is a power amplifier ideally suited for VSAT communications. Backside GND MAAP-011139-DIE Die in Gel Pack1 V D1 V D2 V D3 GND V D4 16 15 14 13 12 11 10 Pad Function Description 1 RFIN RF Input 2, 16 VG Gate Voltage 3, 7, 11, 15 & backside GND Ground 4, 14 VD1 Drain Voltage 1 5, 13 VD2 Drain Voltage 2 6, 12 VD3 Drain Voltage 3 8, 10 VD4 Drain Voltage 4 9 RFOUT RF Output Ordering Information Package GND Pin Configuration2 This product is fabricated using a GaAs pHEMT device process which features full passivation for enhanced reliability. Part Number VG 1. Die quantity varies 2. Backside metal is RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 9 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Electrical Specifications3: Freq. = 30 GHz, TC = +25°C, VD = +6 V, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max. Gain PIN = 0 dBm dB 22 24 — POUT PIN = 17 dBm dBm 35.0 36.5 — IM3 Level POUT = 29 dBm / tone dBc — -27 — Power Added Efficiency PSAT (PIN = 17 dBm) % — 23 — Input Return Loss PIN = -20 dBm dB — 10 — Output Return Loss PIN = -20 dBm dB — 10 — Quiescent Current IDQ (see bias conditions, page 5 ) mA — 2000 — Current PSAT (PIN = +17 dBm) mA — 3200 — 3. Specifications apply to MMIC die with two RF input and two RF output bond wires. Maximum Operating Ratings Absolute Maximum Ratings6,7 Parameter Rating Parameter Absolute Maximum Input Power +17 dBm Input Power +23 dBm Junction Temperature4,5 +160°C Drain Voltage +6.5 V Operating Temperature -40°C to +85°C Gate Voltage -3 to 0 V Junction Temperature8 +175°C Storage Temperature -65°C to +150°C 4. Operating at nominal conditions with junction temperature ≤ +160°C will ensure MTTF > 1 x 106 hours. 5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (Pout - PIN) Typical thermal resistance (ӨJC) = 3.4°C/W. a) For TC = +25°C, TJ = +75°C @ 6 V, 3.2 A, POUT = 36.5 dBm, PIN = 17 dBm b) For TC = +85°C, TJ = +133°C @ 6 V, 3.0 A, POUT = 36.0 dBm, PIN = 17 dBm 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. MACOM does not recommend sustained operation near these survivability limits. 8. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Application PCB Layout C12 GND GND Vd1 Vd2 C13 C8 L1 C3 L2 L3 R3 C2 R2 R1 R4 C4 C9 C1 MAAP011139 R7 C11 C5 C7 C6 R5 L4 R6 C10 C15 Vg Vd1 Vd2 GND GND GND C14 - Application Diagram Application Parts List VD1 C13 C8 VD2 L1 L2 C9 L3 R1 R2 R3 R4 C1 C2 C3 C4 VD 1 VD2 VD3 C14 VD4 RF IN RF O VD3 VG R5 R7 C7 C6 L4 C10 C11 VG C15 C12 VD1 Value Case Style C1 - C7 0.01 µF 0402 C8 - C12 1 µF 0603 C13 - C16 10 µF 0805 R1 - R7 10 Ω 0402 L1 - L4 (Chip Ferrite Bead) BLM18HE601SN1D 0603 PCB Material Specifications VD4 R6 C5 Part C16 Top Layer: 1/2 oz Copper Cladding, 0.017 mm thickness Dielectric Layer: Rogers RO4350B, 0.101 mm thickness Bottom Layer: 1/2 oz Copper Cladding, 0.017 mm thickness Finished overall thickness: 0.135 mm VD2 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Recommended Bonding Diagram and PCB Layout Detail: For optimum power match, RF input and output microstrip lines require open stubs on the application board for bonding wire inductance compensation. Optimum bonding wire inductance for the RF I/O connection is 0.2 nH, and physical length for the gold bond wire (.001” dia.) is approximately 350 µm each for the two wire connection. MAAP011139 3600 210 200 250 250 200 3600 - in in All are micron Allunits units are microns. Input Match Output Match 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Application Information The MAAP-011139 is designed to be easy to use yet high performance. The ultra small size and simple bias allow easy placement on system board. RF input and output ports are DC de-coupled internally. Biasing conditions Recommended biasing conditions are VD = 6 V, IDQ = 2000 mA (controlled with VG). The drain bias voltage range is 3 to 6 V, and the quiescent drain current biasing range is 1500 to 2500 mA. VG pads 2 and 16 are connected internally; choose either pad for layout convenience. Muting can be accomplished by setting the VG to the pinched off voltage (VG = -2 V). VD bias must be applied to VD1, VD2, VD3, and VD4 pads. VD1 pads 4 and 14 are connected internally, and only one pad is required for biasing. Choose either pad for layout convenience. VD2 pads 5 and 13 are connected internally, and only one pad is required for biasing. Choose either pad for layout convenience. Rev. V2 Operating the MAAP-011139-DIE Turn-on 1. Apply VG (-1.5 V). 2. Apply VD (6.0 V typical). 3. Set IDQ by adjusting VG more positive (typically VG~ -0.9 V for IDQ = 2000 mA). 4. Apply RFIN signal. Turn-off 1. Remove RFIN signal. 2. Decrease VG to -1.5 V. 3. Decrease VD to 0 V. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. Both VD3 pads (6 and 12) are required for current symmetry. Both VD4 pads (8 and 10) are required for current symmetry. Die Attachment This product is manufactured from 0.050 mm (0.002”) thick GaAs substrate and has vias through to the backside to enable grounding to the circuit. Recommended conductive epoxy is Namics Unimec XH9890-6. Epoxy should be applied and cured in accordance with the manufacturer’s specifications and should avoid contact with the top of the die. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Typical Performance Curves9 Small Signal Gain vs. Frequency over Bias Voltage 30 30 25 25 20 20 S21 (dB) S21 (dB) Small Signal Gain vs. Frequency over Temperature 15 +25°C -40°C +85°C 10 15 10 5 5.5 V 6.0 V 6.5 V 5 0 28.5 29.0 29.5 30.0 30.5 0 28.5 31.0 29.0 Frequency (GHz) 0 -5 -5 -10 -10 S11 (dB) S11 (dB) 0 -15 30.5 31.0 -15 -20 -20 +25°C -40°C +85°C -25 -30 28.5 29.0 5.5 V 6.0 V 6.5 V -25 29.5 30.0 30.5 -30 28.5 31.0 29.0 29.5 30.0 30.5 31.0 Frequency (GHz) Frequency (GHz) Output Return Loss vs. Frequency over Temperature Output Return Loss vs. Frequency over Bias Voltage 0 0 -5 -5 -10 -10 S22 (dB) S22 (dB) 30.0 Input Return Loss vs. Frequency over Bias Voltage Input Return Loss vs. Frequency over Temperature -15 -20 -15 -20 +25°C -40°C +85°C -25 -30 28.5 6 29.5 Frequency (GHz) 29.0 5.5 V 6.0 V 6.5 V -25 29.5 30.0 Frequency (GHz) 30.5 31.0 -30 28.5 29.0 29.5 30.0 30.5 Frequency (GHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 31.0 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Typical Performance Curves9 PSAT vs. Frequency over Bias Voltage PSAT vs. Frequency over Temperature 40 40 +25°C -40°C +85°C 5.5 V 6.0 V 6.5 V 39 PSAT (dBm) PSAT (dBm) 39 38 37 36 38 37 36 35 28.5 29.0 29.5 30.0 30.5 35 28.5 31.0 29.0 Frequency (GHz) 30.0 30.5 31.0 P1dB vs. Frequency over Bias Voltage P1dB vs. Frequency over Temperature 40 40 +25°C -40°C +85°C 5.5 V 6.0 V 6.5 V 38 P1dB (dBm) 38 P1dB (dBm) 29.5 Frequency (GHz) 36 34 32 36 34 32 30 28.5 29.0 29.5 30.0 Frequency (GHz) 30.5 31.0 30 28.5 29.0 29.5 30.0 30.5 Frequency (GHz) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 31.0 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Typical Performance Curves9 Output IP3 vs. Frequency over Bias Voltage 50 50 45 45 OIP3 (dBm) OIP3 (dBm) Output IP3 vs. Frequency over Temperature 40 35 29.0 29.5 30.0 30.5 5.5 V 6.0 V 6.5 V 35 +25°C -40°C +85°C 30 28.5 40 30 28.5 31.0 29.0 Frequency (GHz) 30.0 30.5 31.0 IM3 vs. Frequency over Bias Voltage (POUT = +29 dBm/Tone) IM3 vs. Frequency over Temperature (POUT = +29 dBm/Tone) -10 -10 +25°C -40°C +85°C 5.5 V 6.0 V 6.5 V -15 IM3 Level (dBc) -15 IM3 Level (dBc) 29.5 Frequency (GHz) -20 -25 -30 -35 -20 -25 -30 -35 -40 28.5 29.0 29.5 30.0 Frequency (GHz) 30.5 31.0 -40 28.5 29.0 29.5 30.0 30.5 Frequency (GHz) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 31.0 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Typical Performance Curves9 P1dB, PSAT vs. Frequency PAE vs. Frequency 30 38 25 36 PAE (%) P1dB (dB), PSAT (dBm) 40 34 15 P1dB 32 20 PSAT 30 28.5 29.0 29.5 30.0 30.5 10 28.5 31.0 29.0 Frequency (GHz) 30.5 31.0 Output IP3 vs. Output Power per Tone 50 -10 29 GHz 30 GHz 31 GHz -20 45 OIP3 (dBm) -30 IM3 (dBc) 30.0 Frequency (GHz) IM3 vs. Output Power per Tone -40 -50 40 35 30 29 GHz 30 GHz 31 GHz 25 -60 -70 29.5 5 10 15 20 25 Output Power per tone (dBm) 30 35 20 5 10 15 20 25 30 Output Power per tone (dBm) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 35 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 Typical Performance Curves9 PAE vs. Input Power 40 30 35 25 30 20 PAE (%) Output Power (dBm) Output Power vs. Input Power 25 20 10 28.5 GHz 29.0 GHz 29.5 GHz 30.0 GHz 30.5 GHz 31.0 GHz 15 10 -10 -5 0 5 10 15 15 28.5 GHz 29.0 GHz 29.5 GHz 30.0 GHz 30.5 GHz 31.0 GHz 5 0 -10 20 -5 0 Input Power (dBm) 10 15 20 Quiescent Drain Current over Temperature Drain Current vs. Input Power 3200 2100 3000 2075 28.5 GHz 29.0 GHz 29.5 GHz 30.0 GHz 30.5 GHz 31.0 GHz ids 2050 IDS (mA) 2800 IDS (mA) 5 Input Power (dBm) 2600 2400 2025 2000 1975 1950 2200 1925 2000 -10 -5 0 5 10 Input Power (dBm) 15 20 1900 -40 -15 10 35 60 Temperature (°C) 9. Typical performance curves are achieved by using the recommended bonding diagram and PCB layout detail. 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 85 MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 MMIC Die Outline Bond Pad Detail 11 Pad Size (x) Size (y) A, Q 88 112 B, P 105 96 C, D, O, N 108 83 E, M 163 83 F, L 169 88 G, K 248 88 H, J, R, T 89 99 I, S 89 159 Notes: 1. All units are in µm, unless otherwise noted, with a tolerance of ±5 µm. 2. Die thickness is 50 ±10 µm. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAP-011139-DIE Power Amplifier, 4 W 28.5 - 31.0 GHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 12 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support