MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Features
High Gain: 24 dB
P1dB: 37.5 dBm
PSAT: 38.5 dBm
IM3 Level: -24 dBc @ POUT = 33 dBm/tone
Power Added Efficiency: 23% @ PSAT
Return Loss: 12 dB
Bare Die Dimensions: 3.6 x 3.8 x 0.05 mm
RoHS* Compliant
Functional Diagram
2
1
18
3
4
5
6
Vd1
GND
Vd2
Vd3
7
GND
8
Vd4
GND
GND
RFIN
GND
9
RFOUT
10
GND
11
Description
The MAAP-011140-DIE is a 4-stage, 6 W power
amplifier in bare die form. This power amplifier
operates from 27.5 to 30.0 GHz and provides 24 dB
of linear gain, 6 W saturated output power, and 23%
efficiency while biased at 6 V.
The MAAP-011140-DIE is a power amplifier ideally
suited for VSAT communications.
Backside Die
GND
Vg
GND
GND
Vd3
GND
17
16
15
14
13
Vd4
12
Pin Configuration2
This product is fabricated using a GaAs pHEMT
device process which features full passivation for
enhanced reliability.
Pad
Function
Description
1
RFIN
RF Input
2, 4, 7, 9, 11,
13, 15, 16, 18
& backside
GND
Ground
3
VD1
Drain Voltage Stage 1
5
VD2
Drain Voltage Stage 2
Ordering Information
Part Number
Package
6, 14
VD3
Drain Voltage Stage 3
MAAP-011140-DIE
Die in Gel Pack1
8, 12
VD4
Drain Voltage Stage 4
10
RFOUT
RF Output
17
VG
Gate Voltage
1. Die quantity varies
2. Backside metal is RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Electrical Specifications3: Freq. = 30 GHz, TC = +25°C, VD = +6 V, Z0 = 50 Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Gain
PIN = 0 dBm
dB
22
24
—
POUT
PIN = 17 dBm
dBm
36.0
37.5
—
IM3 Level
POUT = 33 dBm / tone
dBc
—
-24
—
Power Added Efficiency
PSAT (PIN = 17 dBm)
%
Input Return Loss
PIN = -20 dBm
dB
—
12
—
Output Return Loss
PIN = -20 dBm
dB
—
12
—
Quiescent Current
IDQ (see bias conditions, page 5 )
mA
—
3000
—
Current
PSAT (PIN = 17 dBm)
mA
—
5250
—
23
3. Specifications apply to MMIC die with two RF input and two RF output bond wires, and tested with 50 Ω GSG probes. Further performance
tuning to optimize the RF input and RF output impedance matching is shown on Recommended Bonding Diagram and PCB Layout Detail
(pg. 4). Typical performance curves are achieved by using the recommended bonding diagram and PCB layout detail.
Maximum Operating Ratings
Absolute Maximum Ratings6,7
Parameter
Rating
Parameter
Absolute Maximum
Input Power
+19 dBm
Input Power
+24 dBm
Junction Temperature4,5
+160°C
Drain Voltage
+6.5 V
Operating Temperature
-40°C to +85°C
Gate Voltage
-3 to 0 V
Junction Temperature8
+175°C
Storage Temperature
-65°C to +150°C
4. Operating at nominal conditions with TC ≤ +160°C will ensure
MTTF > 1 x 106 hours.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (Pout - PIN))
Typical thermal resistance (ӨJC) = 3.4°C/W.
a) For TC = +25°C,
TJ = 108°C @ 6 V, 5.25 A, POUT = 38.5, PIN = 17 dBm
b) For TC = +80°C,
TJ = 159°C @ 6 V, 4.96 A, POUT = 38.1, PIN = 17 dBm
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. MACOM does not recommend sustained operation near these
survivability limits.
8. Junction Temperature directly effects device MTTF. Junction
temperature should be kept as low as possible to maximize
lifetime.
2
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Application PCB Layout
GND
C12
GND
Vd1
Vd2
C13
C8
L1
L2
C3
L3
R3
C2 R2
R1
C4
R4
C9
C1
MAAP011140
R7
C11
C5
C7
C6
R5
L4
R6
C10
C15
Vg
Vd1
Vd2
GND
GND
GND
Application Diagram
Application Parts List
VD1
C13
C8
VD2
L1
L2
C9
L3
R1
R2
R3
R4
C1
C2
C3
C4
VD 1
VD 2
VD 3
RF
OUT
VG
VD 3
R5
R6
R7
C7
L4
C10
3
C11
VG
C15
C12
VD1
Value
Case Style
C1 - C7
0.01 µF
0402
C8 - C12
1 µF
0603
C13 - C16
10 µF
0805
R1 - R7
10 Ω
0402
L1 - L4
(Chip Ferrite Bead)
BLM18HE601SN1D
0603
PCB Material Specifications
VD4
C6
Part
C14
VD 4
RF
IN
C5
C14
C16
Top Layer: 1/2 oz Copper Cladding, 0.017 mm thickness
Dielectric Layer: Rogers RO4350B, 0.101 mm thickness
Bottom Layer: 1/2 oz Copper Cladding, 0.017 mm thickness
Finished overall thickness: 0.135 mm
VD2
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For further information and support please visit:
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Recommended Bonding Diagram and PCB Layout Detail:
For optimum power match, RF input and output microstrip lines require open stubs on the application board for
bonding wire inductance compensation. Optimum bonding wire inductance for the RF I/O connection is 0.2 nH,
and physical length for the gold bond wire (.001” dia.) is approximately 350 µm each for the two wire connection.
MAAP011140
4300
210
200
250
250
200
4100
- in in
All
are
micron
Allunits
units are
microns.
Input Match
Output Match
4
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For further information and support please visit:
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Application Information
The MAAP-011140 is designed to be easy to use yet
high performance. The ultra small size and simple
bias allows easy placement on system board. RF
input and output ports are DC de-coupled internally.
Biasing conditions
Recommended biasing conditions are VD = 6 V,
IDQ = 3000 mA (controlled with VG). The drain bias
voltage range, VD, is 3 to 6.5 V, and the quiescent
drain current biasing range, IDQ, is 2000 to 4000
mA.
VD bias must be applied to VD1, VD2, VD3, and VD4
pads.
Both VD3 pads (6 and 14) are required for current
symmetry.
Both VD4 pads (8 and 12), are required for current
symmetry.
A single DC voltage (VG) will bias all amplifier
stages. Muting can be accomplished by setting the
VG to the pinched off voltage (VG = -2 V).
Rev. V3
Operating the MAAP-011140-DIE
Turn-on
1. Apply VG (-1.5 V).
2. Apply VD (6.0 V typical).
3. Set IDQ by adjusting VG more positive
(typically VG~ -0.9 V for IDQ = 3000 mA).
4. Apply RFIN signal.
Turn-off
1. Remove RFIN signal.
2. Decrease VG to -1.5 V.
3. Decrease VD to 0 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
Die Attachment
This product is manufactured from 0.050 mm
(0.002”) thick GaAs substrate and has vias through
to the backside to enable grounding to the circuit.
Recommended conductive epoxy is Namics
Unimec XH9890-6. Epoxy should be applied and
cured in accordance with the manufacturer’s
specifications and should avoid contact with the top
of the die.
5
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Typical Performance Curves9
Small Signal Gain vs. Frequency over Bias Voltage
30
30
25
25
20
20
S21 (dB)
S21 (dB)
Small Signal Gain vs. Frequency over Temperature
15
+25°C
-40°C
+85°C
10
5.5 V
6.0 V
6.5 V
15
10
5
5
0
27.0
27.5
28.0
28.5
29.0
29.5
30.0
0
27.0
30.5
27.5
28.0
0
-5
-5
-10
-10
S11 (dB)
S11 (dB)
0
-15
29.5
30.0
30.5
-15
-20
-20
+25°C
-40°C
+85°C
-25
-30
27.0
27.5
28.0
28.5
29.0
29.5
30.0
5.5 V
6.0 V
6.5 V
-25
-30
27.0
30.5
27.5
28.0
28.5
29.0
29.5
30.0
30.5
Frequency (GHz)
Frequency (GHz)
Output Return Loss vs. Frequency over Temperature
Output Return Loss vs. Frequency over Bias Voltage
0
0
+25°C
-40°C
+85°C
5.5 V
6.0 V
6.5 V
-10
S22 (dB)
-10
S22 (dB)
29.0
Input Return Loss vs. Frequency over Bias Voltage
Input Return Loss vs. Frequency over Temperature
-20
-30
-20
-30
-40
27.0
6
28.5
Frequency (GHz)
Frequency (GHz)
27.5
28.0
28.5
29.0
Frequency (GHz)
29.5
30.0
30.5
-40
27.0
27.5
28.0
28.5
29.0
29.5
30.0
Frequency (GHz)
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Visit www.macom.com for additional data sheets and product information.
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30.5
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Typical Performance Curves9
PSAT vs. Frequency over Bias Voltage
40
40
39
39
PSAT (dBm)
PSAT (dBm)
PSAT vs. Frequency over Temperature
38
37
+25°C
-40°C
+85°C
36
35
27.0
27.5
28.0
38
37
5.5 V
6.0 V
6.5 V
36
28.5
29.0
29.5
30.0
35
27.0
30.5
27.5
28.0
40
39
39
P1dB (dBm)
P1dB (dBm)
40
38
37
+25°C
-40°C
+85°C
35
27.0
27.5
28.5
29.0
Frequency (GHz)
29.5
30.0
30.5
30.0
30.5
38
37
36
28.0
29.0
P1dB vs. Frequency over Bias Voltage
P1dB vs. Frequency over Temperature
36
28.5
Frequency (GHz)
Frequency (GHz)
29.5
30.0
30.5
35
27.0
5.5 V
6.0 V
6.5 V
27.5
28.0
28.5
29.0
29.5
Frequency (GHz)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Typical Performance Curves9
Output IP3 vs. Frequency over Bias Voltage
50
50
45
45
OIP3 (dBm)
OIP3 (dBm)
Output IP3 vs. Frequency over Temperature
40
+25°C
-40°C
+85°C
35
30
27.5
28.0
28.5
29.0
29.5
40
5.5 V
6.0 V
6.5 V
35
30
27.5
30.0
28.0
Frequency (GHz)
29.0
29.5
30.0
IM3 vs. Frequency over Bias Voltage
(POUT = +33 dBm/Tone)
IM3 vs. Frequency over Temperature
(POUT = +33 dBm/Tone)
-10
-10
+25°C
-40°C
+85°C
5.5 V
6.0 V
6.5 V
-15
IM3 Level (dBc)
-15
IM3 Level (dBc)
28.5
Frequency (GHz)
-20
-25
-20
-25
-30
27.5
28.0
28.5
29.0
Frequency (GHz)
29.5
30.0
-30
27.5
28.0
28.5
29.0
29.5
Frequency (GHz)
8
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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30.0
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Typical Performance Curves9
PAE, Gain vs. Frequency
50
50
40
40
PAE
PAE (%), Gain (dB)
P1dB (dB), PSAT (dBm)
P1dB, PSAT vs. Frequency
30
P1dB
20
PSAT
10
27.5
28.0
28.5
29.0
29.5
Gain
30
20
10
27.5
30.0
28.0
Frequency (GHz)
-10
29.5
30.0
50
-20
45
27.5 GHz
28.0 GHz
29.0 GHz
30.0 GHz
-30
OIP3 (dBc)
IM3 (dBc)
29.0
Output IP3 vs. Output Power per Tone
IM3 vs. Output Power per Tone
-40
-50
-60
-70
28.5
Frequency (GHz)
40
35
27.5 GHz
28.0 GHz
29.0 GHz
30.0 GHz
30
25
5
10
15
20
25
Output Power per tone (dBm)
30
35
20
5
10
15
20
25
30
Output Power per tone (dBm)
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
35
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
Typical Performance Curves9
PAE vs. Input Power
40
30
35
25
30
20
PAE (%)
Output Power (dBm)
Output Power vs. Input Power
25
27.5 GHz
28.0 GHz
28.5 GHz
29.0 GHz
29.5 GHz
30.0 GHz
20
15
10
-10
-5
0
5
10
15
15
27.5 GHz
28.0 GHz
28.5 GHz
29.0 GHz
29.5 GHz
30.0 GHz
10
5
0
-10
20
-5
0
Input Power (dBm)
10
15
20
Quiescent Drain Current over Temperature
Drain Current vs. Input Power
5500
3100
27.5 GHz
28.0 GHz
28.5 GHz
29.0 GHz
29.5 GHz
30.0 GHz
3075
ids
3050
IDS (mA)
5000
IDS (mA)
5
Input Power (dBm)
4500
4000
3025
3000
2975
2950
2925
3500
-10
-5
0
5
10
Input Power (dBm)
15
20
2900
-40
-15
10
35
60
Temperature (°C)
9. Typical performance curves are achieved by using the recommended bonding diagram and PCB layout detail.
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
85
MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
MMIC Die Outline
Bond Pad Detail
Pad
Size (x)
Size (y)
A, B, C
88
88
D, M
169
88
E, L, O
161
88
F
84
84
G, K
249
88
H, J, Q, S
89
99
I, R
89
159
N, P
158
88
Notes:
1. All units are in µm, unless otherwise noted, with
a tolerance of ±5 µm.
2. Die thickness is 50 ±10 µm.
11
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MAAP-011140-DIE
Power Amplifier, 6 W
27.5 - 30.0 GHz
Rev. V3
MACOM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
12
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