MAGX-000035-030000

MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features         GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Applications General purpose for pulsed or CW applications  Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX  Civilian and Military Radar  Military and Commercial Communications  Public Radio  Industrial, Scientific and Medical  SATCOM  Instrumentation  Avionics Product Description Typical CW RF Performance The MAGX-000035-030000 is a gold metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-030000 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Freq. (MHz) (W Ave) Gain (dB) Eff (%) 30 58 40 80 100 44 32 65 500 43 27 66 1500 42 20 59 3000 35 13 55 3500 30 12 53 Pout Ordering Information MAGX-000035-030000 MAGX-000035-SB1PPR 30W GaN Power Transistor 1.5 GHz Evaluation Board 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Absolute Maximum Ratings (1, 2, 3) Limit Supply Voltage (Vdd) Supply Voltage (Vgg) Supply Current (Id1) Input Power (Pin) Junction/Channel Temp +65V -8 to 0V 1200 mA +30 dBm 200 ºC MTTF (TJ250 V (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg))