MAGX-000035-05000P

MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features          GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration Thermally-Enhanced 3 x 6 mm 14-Lead DFN MTTF = 600 years (TJ < 200°C) Halogen-Free “Green” Mold Compound RoHS* Compliant and 260°C Reflow Compatible MSL-1 Description The MAGX-000035-05000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Functional Schematic 1 2 3 5 4 NC NC 6 7 NC NC G G G 15 Ordering Information1,2 D Part Number Package MAGX-000035-05000P Bulk Packaging MAGX-000035-0500TP 250 Piece Reel MAGX-000035-PB2PPR Sample Board 1. Reference Application Note M513 for reel size information. 2. When ordering sample evaluation boards, choose a standard frequency range indicated on page 4 or specify a desired custom range. Custom requests may increase lead times. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. D D NC NC NC NC 14 13 12 11 10 9 8 Pin Configuration3 Pin No. Function Pin No. Function 1 No Connection 8 No Connection 2 No Connection 9 No Connection 3 VGG/RFIN 10 VDD/RFOUT 4 VGG/RFIN 11 VDD/RFOUT 5 VGG/RFIN 12 VDD/RFOUT 6 No Connection 13 No Connection 7 No Connection 14 No Connection 15 Paddle4 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF and DC ground. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Typical Performance5: VDD = 50 V, IDQ = 100 mA, TA = 25°C Parameter 30 MHz 1 GHz 2.5 GHz 3.5 GHz Units Gain 24 22 17 14 dB Saturated Power (PSAT) 65 65 50 45 W Power Gain at PSAT 22 21 15 11 dB PAE @ PSAT 73 65 58 53 % 5. Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page 4. Electrical Specifications: Freq. = 1.6 GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units CW Output Power (P2.5 dB) VDD = 28 V, IDQ = 100 mA POUT - 12 - W Pulsed Output Power (P2.5 dB) 1 ms and 10% Duty Cycle VDD = 50 V, IDQ = 100 mA POUT 42 50 - W Pulsed Power Gain (P2.5 dB) VDD = 50 V, IDQ = 100 mA GP 16 18 - dB Pulsed Drain Efficiency (P2.5 dB) VDD = 50 V, IDQ = 100 mA ηD 55 66 - % Load Mismatch Stability (P2.5 dB) VDD = 50 V, IDQ = 100 mA VSWR-S - 5:1 - - Load Mismatch Tolerance (P2.5 dB) VDD = 50 V, IDQ = 100 mA VSWR-T - 10:1 - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.1 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.2 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF RF FUNCTIONAL TESTS Electrical Characteristics: TA = 25°C Parameter DC CHARACTERISTICS DYNAMIC CHARACTERISTICS 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Absolute Maximum Ratings 6,7,8,9,10 Parameter Absolute Max. Input Power POUT - GP + 2.5 dBm Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 2500 mA Power Dissipation, CW @ 85ºC 13 W Power Dissipation (PAVG), Pulsed @ 85°C 43 W Junction Temperature11 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C 6. 7. 8. 9. 10. Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V. CW operation at VDD voltages above 28 V is not recommended. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 11. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical CW thermal resistance (ӨJC) = 9.63°C/W a) For TC = 79°C, TJ = 200°C @ 28 V, 840 mA, POUT = 12 W, PIN = 0.92 W Typical transient thermal resistances: b) 300 µs pulse, 10% duty cycle, ӨJC = 1.6°C/W For TC = 79°C, TJ = 117°C @ 50 V, 1090 mA, POUT = 30.2 W, PIN = 1.42 W c) 1 ms pulse, 10% duty cycle, ӨJC = 2.0°C/W For TC = 79°C, TJ = 129°C @ 50 V, 1110 mA, POUT = 30.7 W, PIN = 1.5 W d) 1 ms pulse, 20% duty cycle, ӨJC = 2.81°C/W For TC = 79°C, TJ = 153°C @ 50 V, 1120 mA, POUT = 30.9 W, PIN = 1.59 W 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Evaluation Board Details and Recommended Tuning Solutions Parts measured on evaluation board (8-mils thick RO4003C). Electrical and thermal ground is provided using copper-filled via hole array (not pictured), and evaluation board is mounted to a metal plate. VD Matching is provided using lumped elements as shown at left. Recommended tuning solutions for 2 frequency ranges are detailed in the parts list below. Bias Sequencing RFIN RFOUT Turning the device ON 1. Set VG to the pinch-off (VP), typically -5 V. 2. Turn on VD to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VG down to VP. 3. Decrease VD down to 0 V. 4. Turn off VG. VG Parts List (N/A = not applicable for this tuning solution) Part Frequency = 1.6 GHz Frequency = 0.9 - 1.2 GHz C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 R1 R2 R3 L1 L2 L3 L4 0402 27 pF, ±5%, 200 V, ATC 0603, 6.8 pF, ±0.1 pF, 250 V, ATC 0505, 100 pF, ±10%, 200 V, ATC 0805, 1000 pF, 100 V, 5%, AVX N/A 0505, 2.2 pF, ±5%, 250 V, ATC 0505, 36 pF, ±5%, 250 V, ATC 0505, 36 pF, ±5%, 250 V, ATC 0805, 1000 pF, 100 V, 5%, AVX 1210, 1 µF, 100 V, 20%, ATC N/A 33 Ω, 0805, 5% 1.0 Ω, 0603, 5% 1.0 Ω, 0603, 5% N/A N/A N/A N/A 0402, 8.2 pF, ±0.1 pF, 200 V, ATC 0402, 15 pF, ±5%, 200 V, ATC 0505, 100 pF, ±10%, 200 V, ATC 0805, 1000 pF, 100 V, 5%, AVX N/A 0505, 2.7 pF, ±0.1 pF, 250 V, ATC 0603, 56 pF, ±5%, 250 V, ATC 0505, 100 pF, ±10%, 200 V, ATC 0805, 1000 pF, 100 V, 5%, AVX 1210, 1 µF, 100 V, 20%, ATC 100 µF, 160 V 9.1 Ω, 0805, 5% 0.33 Ω, 0805, 5% 0.33 Ω, 0805, 5% 0402HP, 3.3 nH 0402HP, 1.0 nH 0402HP, 4.7 nH 0402HP, 3.6 nH 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Lead-Free 3x6 mm 14-Lead DFN† † Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Pd/Au. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Devices and Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these Class 1B devices. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Applications Section S-Parameter Data: TA = 25°C, VDD = +50 V, IDQ = 100 mA MAGX00035_05000P_50 1.0 0.8 2. 0 6 0. 0. 4 .0 3 S(1,1) 0 MAGX00035_05000P_50 4. 3.499 GHz r 0.0533052 x -0.0525211 1.308 GHz r 0.225072 x -0.409382 2 -0. 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0.2 0 5.0 S(2,2) MAGX00035_05000P_50 2.704 GHz r 0.0768784 x -0.145712 0.4 2.744 GHz r 0.0209221 x 0.0770001 -10.0 3.498 GHz r 0.017463 x 0.129484 1.307 GHz r 0.0313997 x -0.0593526 Swp Max 6GHz -4 .0 -5. 0 -3 .0 Swp Min 0.03GHz -1.0 -0.8 -0 .6 .0 -2 .4 -0 SPAR GRAPH 40 30 2.048 GHz 22.45 dB 6 GHz 11.98 dB 20 10 DB(MSG()) MAGX00035_05000P_50 0 DB(GMax()) MAGX00035_05000P_50 -10 DB(|S(2,1)|) MAGX00035_05000P_50 -20 0.03 2.03 4.03 6 Frequency (GHz) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Applications Section Thermal Performance: Freq. = 1.6 GHz, TC = 85°C, VDD = +50 V, IDQ = 100 mA, Z0 = 50 Ω Power (Output & Dissipated) vs. Transient Junction Temperature, Pulse Duration and Duty Cycle 36 200 Power Dissipation 1.6 GHz Power Output 34 180 32 160 30 140 28 120 26 100 Max .Transient Junction Temp. 24 80 Pulse Width (µs), Duty Cycle (%) Pulse Width, Duty Cycle 100 µs, 10% 100 µs, 20% 300 µs, 10% 300 µs, 20% 500 µs, 10% 500 µs, 20% 1000 µs, 10% 1000 µs, 20% 8000 µs, 9.2% Power Dissipation (W) 25.9 25.8 26.6 26.6 27.7 28.0 27.2 26.7 32.8 1.6 GHz POUT (W) 29.9 29.8 30.8 30.9 30.7 30.8 30.7 30.9 35.2 Max. Transient Junction Temp. (°C) 108.2 113.1 116.6 139.9 121.3 145.2 129.2 153.1 169.6 Junction temperature measured using High-Speed Transient (HST) temperature detection microscopy. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Applications Section Typical Performance Curves (reference 1.6 GHz parts list): 1.6 GHz, 1 ms Pulse, 10% Duty Cycle, VDD= +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 22 50 20 40 18 30 16 20 14 10 12 0.0 0.5 1.0 1.5 Input Power (W) 0 0.0 0.5 1.0 Input Power (W) PAE vs. Input Power 70 60 50 40 30 20 0.0 0.5 1.0 1.5 Input Power (W) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport 1.5 MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Applications Section Typical Performance Curves (reference 0.9 - 1.2 GHz parts list): 0.9 - 1.2 GHz, 500 µs Pulse, 10% Duty Cycle, VDD = +50 V, TA = 25°C, Z0 = 50 Ω Output Power vs. Input Power Gain vs. Input Power 70 26 0.90 GHz 0.95 GHz 1.0 GHz 1.1 GHz 1.2 GHz 24 0.90 GHz 0.95 GHz 1.0 GHz 1.1 GHz 1.2 GHz 60 50 22 40 20 30 18 16 20 20 22 24 26 28 30 10 20 22 24 26 28 Input Power (dBm) Input Power (dBm) PAE vs. Input Power 70 60 50 40 0.90 GHz 0.95 GHz 1.0 GHz 1.1 GHz 1.2 GHz 30 20 20 22 24 26 28 30 Input Power (dBm) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macomtech.com/content/customersupport 30 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: MACOM: MAGX-000035-05000P