MAGX-000912-250L00

MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 Features  GaN on SiC Depletion-Mode Transistor Technology  Internally Matched  Common-Source Configuration  Broadband Class AB Operation  RoHS* Compliant and 260 °C Reflow Compatible  +50 V Typical Operation  MTTF = 600 years (TJ < 200 °C) Applications  Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S Avionics. Ordering Information  Military radar for IFF and Data Links. Description The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Part Number Description MAGX-000912-250L00 250W GaN Power Transistor MAGX-000912-SB1PPR Evaluation Test Fixture Typical RF Performance under standard operating conditions, POUT = 250 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) VSWR-S (5:1) VSWR-T (10:1) 960 3.4 18.7 8.5 58.8 -8.8 0.4 S P 1030 4.2 17.8 8.3 60.1 -12.7 0.4 S P 1090 3.4 18.7 8.2 61.1 -9.3 0.4 S P 1150 3.4 18.7 8.2 60.7 -8.6 0.3 S P 1215 3.5 18.6 8.6 58.0 -11.5 0.4 S P * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 Electrical Specifications: Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units PIN - 3.5 5.3 W GP 16.7 18.5 - dB ηD 52 59.7 - % VSWR-S - 5:1 - - VSWR-T - 10:1 - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 0.4 12 mA Gate Threshold Voltage VDS = 5 V, ID = 30 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 7 mA GM 5.0 7.7 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, Freq. = 1 MHz COSS - 22 - pF CRSS - 2.2 - pF RF Functional Tests Peak Input Power Power Gain Drain Efficiency Load Mismatch Stability VDD = 50 V, IDQ = 250 mA, Pulse Width = 128 μs, Duty Cycle = 10%, POUT = 125 W Peak (12.5 W avg.) Load Mismatch Tolerance Electrical Characteristics: TA = 25°C Parameter DC Characteristics Dynamic Characteristics Reverse Transfer Capacitance 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 Absolute Maximum Ratings1,2,3 Parameter Limit Drain Voltage (VDD) +65 V Gate Voltage (VGG) -8 to -2 V Drain Current (IDD) 18.9 A 4 Input Power (PIN) PIN (nominal) + 3 dB Operating Junction Temperature 5 250 ºC Peak Pulsed Power Dissipation at 85 ºC 700 W Operating Temperature Range -40 to +95 ºC Storage Temperature Range -65 to +150 ºC ESD Maximum - Machine Model (MM) 50 V ESD Maximum - Human Body Model (HBM) 250 V 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V. 4. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 250 W. 5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime.  MTTF = 5.3 x 106 hours (TJ < 200 °C)  MTTF = 6.8 x 104 hours (TJ < 250 °C) Thermal Characteristics 3 Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 70 ºC, VDD = 50 V, IDQ = 250 mA, POUT = 250 W, Pulse Width = 128 µs, Duty Cycle = 10% ΘJC 0.25 °C/W M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 Test Fixture Assembly Contact MACOM for additional circuit information. Correct Device Sequencing Test Fixture Impedances Freq. (MHz) ZIF (Ω) ZOF (Ω) 960 2.6 - j4.6 4.0 + j0.0 1030 2.8 - j3.6 3.7 - j0.4 1090 2.8 - j3.9 3.6 - j0.4 1150 2.7 - j3.5 3.5 - j0.4 1215 2.8 - j3.1 3.6 - j0.5 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Zif INPUT NETWORK OUTPUT NETWORK Zof 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 RF Power Transfer Curve (Output Power Vs. Input Power) 350 Pout (W) 300 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz 250 200 150 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Pin (W) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 76.0 68.0 960 MHz 1030 MHz 1090 MHz 1150 MHz 1215 MHz Eff (%) 60.0 52.0 44.0 36.0 100 150 200 250 300 350 Pout (W) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 Outline Drawing† MACOM GX0912-250L LOT NO / SER NO † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Rev. V3 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. These materials are provided by MACOM as a service to its customers and may be used for informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS. MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully indemnify MACOM for any damages resulting from such improper use or sale. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support