MAGX-001090-600L00

MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty MAGX-001090-600L00 Features        Rev. V6 GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 °C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200 °C) Applications  Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S avionics. MAGX-001090-600L0S  Military Radar for IFF and Data Links. Description The MAGX-001090-600L00 and MAGX-001090-600L0S are gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information1 Part Number Description MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless MAGX-A11090-600L00 1030 - 1090 MHz Evaluation Board 1. When ordering the evaluation board, please indicate on sales order notes if it will be used for: A. Standard Flange devices B. Earless Flange devices Typical RF Performance under Standard Operating Conditions, POUT = 600 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) +1dB OD (W) VSWR-S (3:1) VSWR-T (5:1) 1030 4.95 20.8 20.4 58.6 -16.8 0.24 649 S P 1090 4.50 21.3 18.6 64.4 -11.0 0.23 661 S P * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25 °C Parameter Test Conditions Symbol Min. Typ. Max. Units Peak Input Power PIN - 4.3 6.7 W Power Gain GP 19.5 21.4 - dB ηD 55 63 - % Droop - 0.2 0.3 dB Load Mismatch Stability VSWR-S - 3:1 - - Load Mismatch Tolerance VSWR-T - 5:1 - - PIN - 4.6 - W GP - 20.7 - dB ηD - 61 - % RF Functional Tests Drain Efficiency Pulse Droop VDD = 50 V, IDQ = 600 mA, Pulse Width = 32 μs, Duty Cycle = 2%, POUT = 600 W Peak (12 W avg.) Mode-S ELM Pulse Width Conditions2 Peak Input Power Power Gain Drain Efficiency VDD = 50 V, IDQ = 400 mA, 48 pulses of 32 µs on and 18 µs off, repeat every 24 ms, Overall Duty Factor = 6.4%, POUT = 550 W Peak (35.2 W avg.) 2. For Mode-S ELM pulse conditions power measurements are obtained as follows: RF input / output power is measured at the middle of the 25th pulse in the burst (t = 1.216 ms); Droop measurements are defined as the drop in power from the 5th pulse (t = 216us) and 43rd pulse (t = 2.116ms) in the burst. Electrical Characteristics: TA = 25 °C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 1.0 30 mA Gate Threshold Voltage VDS = 5 V, ID = 75 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 17.5 mA GM 12.5 19.2 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, Freq. = 1 MHz COSS - 55 - pF CRSS - 5.5 - pF DC Characteristics Dynamic Characteristics Reverse Transfer Capacitance 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Absolute Maximum Ratings3,4,5 Parameter Limit Drain Voltage (VDD) +65 V Gate Voltage (VGG) -8 to -2 V Drain Current (IDD) 80 A 6 Input Power (PIN) Operating Junction Temperature PIN (nominal) + 3 dB 7 250 ºC Peak Pulsed Power Dissipation at 85 ºC 3.5 kW Operating Temperature Range -40 to +95 ºC Storage Temperature Range -65 to +150 ºC ESD Maximum - Charged Device Model (CDM) 1300 V ESD Maximum - Human Body Model (HBM) 4000 V 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V. 6. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 600 W. 7. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime.  MTTF = 5.3 x 106 hours (TJ < 200 °C)  MTTF = 6.8 x 104 hours (TJ < 250 °C) Thermal Characteristics Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 70 ºC, VDD = 50 V, IDQ = 600 mA, POUT = 600 W, Pulse Width = 32 µs, Duty Cycle = 2% ΘJC 0.05 °C/W 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Test Fixture Assembly Contact MACOM for additional circuit information. Correct Device Sequencing Test Fixture Impedances Freq. (MHz) ZIF (Ω) ZOF (Ω) 1030 1.1 - j1.5 1.5 + j0.5 1060 1.1 - j1.4 1.5 + j0.6 1090 1.1 - j1.3 1.5 + j0.6 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF Zif INPUT NETWORK OUTPUT NETWORK 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Zof 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 RF Power Transfer Curve (Output Power Vs. Input Power) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Typical RF Data with Mode-S ELM ‘pulse’ conditions: 48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4% VDD = 50 V; IDQ = 400 mA 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Outline Drawing MAGX-001090-600L00† † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au. 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 Outline Drawing MAGX-001090-600L0S† † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au. 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev. V6 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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