MAGX-001214-SB1PPR

MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 Features        GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 °C Reflow Compatible +50 V Typical Operation MTTF = 600 years (TJ < 200 °C) Applications  L-Band pulsed radar Description The MAGX-001214-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number Description MAGX-001214-250L00 250W GaN Power Transistor MAGX-001214-SB1PPR Evaluation Test Fixture Typical RF Performance under Standard Operating Conditions, POUT = 250 W (Peak) Freq (MHz) PIN (W) Gain (dB) ID (A) Eff. (%) RL (dB) Droop (dB) VSWR-S (5:1) VSWR-T (10:1) 1200 4.4 17.6 8.0 62.2 -13.3 0.4 S P 1250 4.0 18.0 8.2 60.4 -19.2 0.5 S P 1300 4.1 17.8 8.7 57.1 -22.6 0.6 S P 1350 4.4 17.5 9.1 54.6 -19.2 0.7 S P 1400 4.4 17.6 9.0 55.0 -19.8 0.6 S P * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 Electrical Specifications: Freq. = 1200 - 1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units PIN - 4.2 5.6 W GP 16.5 17.7 - dB ηD 50 57.9 - % VSWR-S 5:1 - - - VSWR-T 10:1 - - - Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - 0.4 12 mA Gate Threshold Voltage VDS = 5 V, ID = 30 mA VGS (TH) -5 -3.1 -2 V Forward Transconductance VDS = 5 V, ID = 7 mA GM 5.0 7.7 - S Input Capacitance Not applicable - Input matched CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, Freq. = 1 MHz COSS - 22 - pF CRSS - 2.2 - pF RF Functional Tests Peak Input Power Power Gain Drain Efficiency Load Mismatch Stability VDD = 50 V, IDQ = 250 mA, Pulse Width = 300 μs, Duty Cycle = 10%, POUT = 250 W Peak (25 W avg.) Load Mismatch Tolerance Electrical Characteristics: TA = 25°C Parameter DC Characteristics Dynamic Characteristics Reverse Transfer Capacitance 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 Absolute Maximum Ratings1,2,3 Parameter Limit Drain Voltage (VDD) +65 V Gate Voltage (VGG) -8 to -2 V Drain Current (IDD) 10.7 A 4 PIN (nominal) + 3 dB Input Power (PIN) Operating Junction Temperature 5 250 ºC Peak Pulsed Power Dissipation at 85 ºC 292 W Operating Temperature Range -40 to +95 ºC Storage Temperature Range -65 to +150 ºC ESD Maximum - Machine Model (MM) 50V ESD Maximum - Human Body Model (HBM) 250V 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V. 4. Input Power Limit is +3 dB over nominal drive required to achieve P OUT = 250 W. 5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and should be kept as low as possible to maximize lifetime.  MTTF = 5.3 x 106 hours (TJ < 200 °C)  MTTF = 6.8 x 104 hours (TJ < 250 °C) Thermal Characteristics 3 Parameter Test Conditions Symbol Typical Units Thermal Resistance TC = 70 ºC, VDD = 50 V, IDQ = 250 mA, POUT = 250 W, Pulse Width = 300 µs, Duty Cycle = 10% ΘJC 0.6 °C/W M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 Test Fixture Assembly Contact MACOM for additional circuit information. Correct Device Sequencing Test Fixture Impedances F (MHz) ZIF (Ω) ZOF (Ω) 1200 3.6 - j5.3 3.5 + j0.7 1250 3.3 - j4.9 3.7 + j0.2 1300 3.2 - j4.4 3.5 - j0.3 1350 3.2 - j4.0 3.2 - j0.6 1400 3.2 - j3.6 2.7 - j0.7 Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS Zif INPUT NETWORK OUTPUT NETWORK Zof 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 RF Power Transfer Curve (Output Power Vs. Input Power) 300 Pout (W) 250 200 1200 MHz 1300 MHz 1400 MHz 150 100 50 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Pin (W) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 70 65 Eff (%) 60 55 1200 MHz 1300 MHz 1400 MHz 50 45 40 35 100 125 150 175 200 225 250 275 300 Pout (W) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 Outline Drawing† MACOM GX1214-250L LOT NO / SER NO † Reference Application Note AN3025 for mounting/soldering recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is Ni/Au. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001214-250L00 GaN on SiC HEMT Pulsed Power Transistor 250 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V3 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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