MAGX-001220-SB1PPR

MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Features          GaN on SiC Depletion-Mode HEMT Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu/Mo/Cu Package RoHS* Compliant +50 V Typical Operation MTTF = 600 Years (TJ < 200°C) EAR99 Export Classification MSL-1 Applications  General Purpose for Pulsed or CW Applications  Commercial Wireless Infrastructure (WCDMA, LTE, WIMAX)  Civilian and Military Radar  Military and Commercial Communications  Public Radio  Industrial, Scientific, and Medical  SATCOM  Instrumentation  DTV Ordering Information Part Number Description MAGX-001220-100L00 100 W GaN Power Transistor MAGX-001220-SB1PPR 1.2-2.0 GHz Evaluation Board Description The MAGX-001220-100L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Electrical Specifications: Freq. = 1.2 - 2.0 GHz, TA = +25°C Parameter Symbol Min. Typ. Max. Units RF Functional Tests: PIN = 4 W, VDD = 50 V, IDQ = 500 mA, Pulse Width = 300 µs, Duty = 10% Peak Output Power POUT 100 110 - W Power Gain GP 14.0 14.8 - dB Drain Efficiency ηD 50 55 - % Load Mismatch Stability VSWR-S - 5:1 - - Load Mismatch Tolerance VSWR-T - 10:1 - - Electrical Characteristics: TA = +25°C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 6 mA Gate Threshold Voltage VDS = 5 V, ID = 15 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 3.5 A GM 2.5 - - S Input Capacitance Not Applicable (Input Matched) CISS N/A N/A N/A pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 30.3 35 pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 2.8 5.4 pF DC Characteristics Dynamic Characteristics 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Absolute Maximum Ratings1,2,3,4,5 Parameter Limit Input Power (PIN) PIN (nominal) + 3 dB Drain Supply Voltage (VDD) +65 V Gate Supply Voltage (VGG) -8 to 0 V Peak Supply Current (IDD) 9A Junction/Channel Temperature +200ºC Average Pulsed Power Dissipation at 85ºC 105 W Operating Temperature -40 to +95ºC Storage Temperature -65 to +150ºC ESD Min. - Charged Device Model (CDM) 300 V ESD Min. - Human Body Model (HBM) 600 V 1. 2. 3. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. MACOM does not recommend sustained operation near these survivability limits. For saturated performance, the following is recommended: (3*VDD + abs(VGG)) 1 x 106 hours. Junction temperature directly affects device MTTF and should be kept as low as possible to maximize lifetime. 5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)). Typical Transient Thermal Resistances (Freq. = 2.0 GHz, IDQ = 500 mA):  ӨJC = 0.68C/W, Pulse Width = 300 μs, 10% duty cycle TJ = 135C (TC = 80C, 50 V, 3.71 A, POUT = 108 W, PIN = 4 W)  ӨJC = 0.97C/W, Pulse Width = 1000 μs, 10% duty cycle TJ = 160C (TC = 80C, 50 V, 3.64 A, POUT = 103 W, PIN = 4 W) 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Evaluation Board Assembly & Circuit Dimensions (1.2 - 2.0 GHz) Correct Device Sequencing Evaluation Board Impedances Freq. (MHz) 1200 1400 1600 1800 2000 ZIF (Ω) 3.9 - j2.9 4.2 - j1.8 4.7 - j2.2 3.5 - j2.8 2.2 - j1.9 ZOF (Ω) 8.6 + j1.1 6.9 + j0.2 6.8 + j0.7 6.1 - j0.6 3.2 + j0.4 Zif INPUT NETWORK OUTPUT NETWORK Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (50 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Zof 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Typical Performance Curves Peak Output Power vs. Peak Input Power Power Gain vs. Peak Output Power 18 140 Power Gain (dB) Peak Output Power (W) 160 120 100 80 60 1.2 GHz 1.6 GHz 40 17 16 15 1.2 GHz 14 1.6 GHz 2.0 GHz 2.0 GHz 20 13 1 2 3 4 40 5 80 100 120 140 Peak Ouput Power (W) Peak Input Power (W) Drain Efficiency vs. Peak Output Power Return Loss vs. Frequency 65 0 60 Return Loss (dB) Drain Efficiency (%) 60 55 50 45 1.2 GHz 1.6 GHz 40 2.0 GHz -3 -6 -9 Pin = 3 W Pin = 4 W -12 Pin = 5 W 35 -15 50 70 90 110 Peak Output Power (W) 130 1.2 1.4 1.6 1.8 Frequency (GHz) 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2.0 MAGX-001220-100L00 GaN on SiC HEMT Pulsed Power Transistor 100 W Peak, 1.2 to 2.0 GHz, 300 μs Pulse, 10% Duty Rev. V2 Package Outline Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support